Abstract: A manufacturing method of a semiconductor substrate includes a step of growing a nitride semiconductor portion from an upper surface of a base substrate exposed in an opening portion of a mask, a step of irradiating a mask portion and the nitride semiconductor portion being grown with first light having a wavelength absorbed by the nitride semiconductor portion at a growth temperature, a step of receiving second light from a semiconductor substrate, and a step of transitioning a growth condition of the nitride semiconductor portion from a first condition to a second condition.

Abstract: A template substrate includes a main substrate containing silicon and including an edge, a mask located above the main substrate and including an opening portion, a seed portion located at the opening portion above the main substrate, and a protecting portion overlapping the edge when viewed from a side and containing a material different from gallium.

Abstract: The present embodiment relates to a surface emitting type light-emitting element mainly including a nitride semiconductor and a layer for forming a resonance mode. The light-emitting element increases the optical confinement coefficient of a layer forming a resonance mode, includes an active layer, a phase modulation layer, and one or more high refractive index layers, and further includes, first and second cladding layers sandwiching the active layer, the phase modulation layer, and the high refractive index layer. The phase modulation layer includes a base layer and modified refractive index regions. The gravity centers of the modified refractive index regions are arranged on a straight line passing through each lattice point of a virtual square lattice and tilted with respect to the square lattice. The distance between the gravity center of each modified refractive index region and the lattice point is individually set according to the optical image.

Abstract: A semiconductor substrate includes a support substrate, a mask pattern located above the support substrate and including a mask portion, a seed portion locally located in a layer above the support substrate in a plan view, and a semiconductor part including a GaN-based semiconductor and located above the mask pattern to be in contact with the seed portion and the mask portion.

Abstract: A template substrate including a first seed region and a growth restricting region that are aligned in a first direction, and a first semiconductor part positioned above the template substrate are provided, the first semiconductor part includes a first base positioned above the first seed region, and a first wing connected to the first base, the first wing facing the growth restricting region with a first void space interposed therebetween, the first wing includes an edge positioned above the growth restricting region, and a ratio of a width of the first void space with respect to a thickness of the first void space in the first direction is equal to or larger than 5.0.

Abstract: A main substrate, a seed portion (SD) located higher than the main substrate, and first and second semiconductor parts (8F and 8S) arranged side by side in a first direction (9Y direction) are provided. The first and second semiconductor parts are in contact with the seed portion, a longitudinal direction of the seed portion (SD) is the first direction (Y direction), and a hollow portion (VD) is located between the main substrate (1) and each of the first semiconductor part and the second semiconductor part.

Abstract: A semiconductor substrate includes a main substrate, a mask pattern located above the main substrate and including a mask portion, and a first semiconductor part and a second semiconductor part located above the mask pattern and adjacent to each other, in which the first semiconductor part includes a first lower edge located on the mask portion and a first protruding portion protruding toward the second semiconductor part side farther than the first lower edge.

Abstract: A light-emitting device according to an embodiment includes a structure for increasing an optical confinement coefficient of a layer forming a resonance mode. The light-emitting device includes a first cladding layer, an active layer, a second cladding layer, a resonance mode formation layer, and a high refractive index layer. The first cladding layer, the active layer, the second cladding layer, the resonance mode formation layer, and the high refractive index layer mainly contain nitride semiconductors. The high refractive index layer has a refractive index higher than that of any of the first cladding layer, the active layer, the second cladding layer, and the resonance mode formation layer, and has a superlattice structure in which two or more layers having refractive indices different from each other are repeatedly laminated.

Abstract: A content presentation system, a content presentation device, and a content presentation method that reduce a burden on a user and present suitable contents to the user with high accuracy are provided. The present technology provides a content presentation system including a computer device that holds content information associated with emotion information indicating an emotion of a user, in which the computer device at least includes a machine learning model that, on the basis of a plurality of pieces of content information presented to the user corresponding to desired emotion information indicating emotion information desired by the user and content information selected by the user from the plurality of pieces of content information, performs machine learning so as to present the content information suitable for the emotion information.

Abstract: A template substrate including a first seed region and a growth restricting region that are aligned in a first direction, and a first semiconductor part positioned above the template substrate are provided, the first semiconductor part includes a first base positioned above the first seed region, and a first wing connected to the first base, the first wing facing the growth restricting region with a first void space interposed therebetween, the first wing includes an edge positioned above the growth restricting region, and a ratio of a width of the first void space with respect to a thickness of the first void space in the first direction is equal to or larger than 5.0.

Abstract: A semiconductor substrate includes a support substrate, a mask pattern located above the support substrate and including a mask portion, a seed portion locally located in a layer above the support substrate in a plan view, and a semiconductor part including a GaN-based semiconductor and located above the mask pattern to be in contact with the seed portion and the mask portion.

Abstract: A content presentation system, a content presentation device, and a content presentation method that reduce a burden on a user and present suitable contents to the user with high accuracy are provided. The present technology provides a content presentation system including a computer device that holds content information associated with emotion information indicating an emotion of a user, in which the computer device at least includes a machine learning model that, on the basis of a plurality of pieces of content information presented to the user corresponding to desired emotion information indicating emotion information desired by the user and content information selected by the user from the plurality of pieces of content information, performs machine learning so as to present the content information suitable for the emotion information.

Abstract: An optical sensor includes a first light source to emit light, a first photodetector to receive light and generate a signal representing a result of receiving the light, a cover made of an elastic material deformable in response to an external force and covering the first light source and the first photodetector, the cover including a reflective portion that reflects light and a transmissive portion that transmits light, a force detector to detect a force corresponding to deformation of the cover based on a signal from the first photodetector, the signal representing a result of receiving light emitted by the first light source, an optical assembly outside the covering component, and a proximity detector to detect the object being in proximity by using the optical assembly and one of the first light source and the first photodetector.

Abstract: A light-emitting device according to an embodiment includes a structure for increasing an optical confinement coefficient of a layer forming a resonance mode. The light-emitting device includes a first cladding layer, an active layer, a second cladding layer, a resonance mode formation layer, and a high refractive index layer. The first cladding layer, the active layer, the second cladding layer, the resonance mode formation layer, and the high refractive index layer mainly contain nitride semiconductors. The high refractive index layer has a refractive index higher than that of any of the first cladding layer, the active layer, the second cladding layer, and the resonance mode formation layer, and has a superlattice structure in which two or more layers having refractive indices different from each other are repeatedly laminated.

Abstract: The present embodiment relates to a surface emitting type light-emitting element mainly including a nitride semiconductor and a layer for forming a resonance mode. The light-emitting element increases the optical confinement coefficient of a layer forming a resonance mode, includes an active layer, a phase modulation layer, and one or more high refractive index layers, and further includes, first and second cladding layers sandwiching the active layer, the phase modulation layer, and the high refractive index layer. The phase modulation layer includes a base layer and modified refractive index regions. The gravity centers of the modified refractive index regions are arranged on a straight line passing through each lattice point of a virtual square lattice and tilted with respect to the square lattice. The distance between the gravity center of each modified refractive index region and the lattice point is individually set according to the optical image.

Abstract: An optical semiconductor element includes: an optical waveguide body; a first electrode that is disposed on the second clad layer; a second electrode that is disposed on a second clad layer on one side of the first electrode in a light guiding direction of the optical waveguide body; a third electrode that is disposed on the second clad layer on the other side of the first electrode in the light guiding direction; and at least one fourth electrode that faces the first electrode, the second electrode, and the third electrode with the optical waveguide body interposed therebetween. The optical waveguide body includes a first separation region that electrically separates a first region under the first electrode from a second region under the second electrode and a second separation region that electrically separates the first region under the first electrode and a third region under the third electrode.

Abstract: A gateway apparatus including a first inter-device interface configured to communicate with a monitoring apparatus; a second inter-device interface configured to communicate with multiple subordinate base station apparatuses; a memory; and a processor coupled to the memory. The processor is configured to generate first configuration information when second configuration information is received from the monitoring apparatus via the first inter-device interface. The processor generates the first configuration information by performing protocol conversion of converting the second configuration information into a format adapted to the second inter-device interface for the multiple base station apparatuses. The processor is further configured to transmit the generated first configuration information to the multiple base station apparatuses via the second inter-device interface, and divide the multiple base station apparatuses into predetermined groups.

Abstract: An optical semiconductor element includes: an optical waveguide body; a first electrode that is disposed on a second clad layer; a second electrode that is disposed on the second clad layer on one side of the first electrode in a light guiding direction of the optical waveguide body; a third electrode that is disposed on the second clad layer on the other side of the first electrode in the light guiding direction; and at least one fourth electrode that faces the first electrode, the second electrode, and the third electrode with the optical waveguide body interposed therebetween. The optical waveguide body includes a first separation region that electrically separates a first region under the first electrode from a second region under the second electrode and a second separation region that electrically separates the first region under the first electrode and a third region under the third electrode.

Abstract: A gateway apparatus including a first inter-device interface configured to communicate with a monitoring apparatus; a second inter-device interface configured to communicate with a plurality of base station apparatuses that are subordinate; and a processor configured to generate second configuration information by a protocol conversion of converting first configuration information to a format compatible with the second inter-device interface, when the first configuration information is received from the monitoring apparatus through the first inter-device interface, the processor further configured to transmit the generated second configuration information to the plurality of base station apparatuses through the second inter-device interface.

Abstract: A gateway apparatus including a first inter-device interface configured to communicate with a monitoring apparatus; a second inter-device interface configured to communicate with multiple subordinate base station apparatuses; a memory; and a processor coupled to the memory. The processor is configured to generate first configuration information when second configuration information is received from the monitoring apparatus via the first inter-device interface. The processor generates the first configuration information by performing protocol conversion of converting the second configuration information into a format adapted to the second inter-device interface for the multiple base station apparatuses. The processor is further configured to transmit the generated first configuration information to the multiple base station apparatuses via the second inter-device interface, and divide the multiple base station apparatuses into predetermined groups.