Abstract: Provided is a manufacturing method for a liquid crystal display device, in which a semiconductor pattern and a metal pattern are formed so that the semiconductor pattern includes a first portion formed under the metal pattern and a second portion which outwardly extends off the metal pattern from the first portion. An insulating layer for covering the metal pattern and the semiconductor pattern is formed. The insulating layer is subjected to etching in a first region located above the metal pattern and in a second region located above at least the second portion of the semiconductor pattern. In the etching step, the insulating layer in the first region is subjected to etching to form a through hole for electrical connection to the metal pattern, and the insulating layer and the semiconductor pattern in the second region are subjected to etching to remove the second portion of the semiconductor pattern.

Abstract: A display device includes: a first line and a second line which are arranged adjacent to and parallel to each other in a spaced-apart manner; a conductive layer which is arranged at a position where the conductive layer overlaps with the first line and the second line; and an insulation layer which is interposed between the first and second lines and the conducive layer. Here, the conductive layer includes a first overlapping portion which overlaps with the first line, a second overlapping portion which overlaps with the second line, and a connecting portion which connects the first overlapping portion and the second overlapping portion between the first overlapping portion and the second overlapping portion.

Abstract: Provided is a manufacturing method for a liquid crystal display device, in which a semiconductor pattern and a metal pattern are formed so that the semiconductor pattern includes a first portion formed under the metal pattern and a second portion which outwardly extends off the metal pattern from the first portion. An insulating layer for covering the metal pattern and the semiconductor pattern is formed. The insulating layer is subjected to etching in a first region located above the metal pattern and in a second region located above at least the second portion of the semiconductor pattern. In the etching step, the insulating layer in the first region is subjected to etching to form a through hole for electrical connection to the metal pattern, and the insulating layer and the semiconductor pattern in the second region are subjected to etching to remove the second portion of the semiconductor pattern.

Abstract: A display device includes: a first line and a second line which are arranged adjacent to and parallel to each other in a spaced-apart manner; a conductive layer which is arranged at a position where the conductive layer overlaps with the first line and the second line; and an insulation layer which is interposed between the first and second lines and the conducive layer. Here, the conductive layer includes a first overlapping portion which overlaps with the first line, a second overlapping portion which overlaps with the second line, and a connecting portion which connects the first overlapping portion and the second overlapping portion between the first overlapping portion and the second overlapping portion.