Abstract: A nitride semiconductor light-emitting element includes an n-type cladding layer including n-type AlGaN, and a multiple quantum well layer including a barrier layer that includes AlGaN and is located on the n-type cladding layer side, wherein the nitride semiconductor light-emitting element further comprises a trigger layer that is located between the n-type cladding layer and the barrier layer and comprises Si, wherein a plural V-pits starting from dislocations in the n-type cladding layer and ending in the multiple quantum well are formed in the n-type cladding layer and the multiple quantum well layer.

Abstract: A nitride semiconductor light-emitting element includes an n-type cladding layer including n-type AlGaN and having a first Al composition ratio, and a multiple quantum well layer in which a plurality (number N) of barrier layers including AlGaN having a second Al composition ratio more than the first Al composition ratio and a plural (number N) well layers having an Al composition ratio less than the second Al composition ratio are stacked alternately in this order, wherein the second Al composition ratio of the plurality of barrier layers of the multiple quantum well layer increases at a predetermined increase rate from an n-type cladding layer side toward an opposite side to the n-type cladding layer side.

Abstract: A nitride semiconductor light emitting element includes a multi-quantum well layer including AlGaN, and including a plurality of well layers and producing light by combining carriers and emitting deep ultraviolet light with a central wavelength of 250 nm to 350 nm, a metal electrode part including Al that is located above the multi-quantum well layer and reflects a first light that is a part of the light produced by the multi-quantum well layer and travels upward, a multi-stacked semiconductor layer that is located between the multi-quantum well layer and the metal electrode part, includes a plurality of p-type semiconductor layers including p-type AlGaN, and is configured in such a manner that the first light travels out and back therewithin via reflection at the metal electrode part until meeting a second light that is a part of the light produced by the multi-quantum well layer and travels downward, and an ITO contact electrode part provided between the metal electrode part and the multi-quantum well layer

Abstract: A nitride semiconductor light-emitting element includes an n-type cladding layer including n-type AlGaN having a first Al composition ratio, a barrier layer including AlGaN that is located on the n-type cladding layer side in a multiple quantum well layer and has a second Al composition ratio greater than the first Al composition ratio, and a graded layer that is located between the n-type cladding layer and the barrier layer and has a third Al composition ratio that is between the first Al composition ratio and the second Al composition ratio, wherein the third Al composition ratio of the graded layer increases at a predetermined increase rate from the first Al composition ratio toward the second Al composition ratio.

Abstract: A nitride semiconductor light emitting element includes a multi-quantum well layer including AlGaN, and including a plurality of well layers and producing light by combining carriers and emitting deep ultraviolet light with a central wavelength of 250 nm to 350 nm, a metal electrode part including Al that is located above the multi-quantum well layer and reflects a first light that is a part of the light produced by the multi-quantum well layer and travels upward, a multi-stacked semiconductor layer that is located between the multi-quantum well layer and the metal electrode part, includes a plurality of p-type semiconductor layers including p-type AlGaN, and is configured in such a manner that the first light travels out and back therewithin via reflection at the metal electrode part until meeting a second light that is a part of the light produced by the multi-quantum well layer and travels downward, and an ITO contact electrode part provided between the metal electrode part and the multi-quantum well layer

Abstract: A nitride semiconductor light-emitting element includes an n-type cladding layer including n-type AlGaN having a first Al composition ratio, a barrier layer including AlGaN that is located on the n-type cladding layer side in a multiple quantum well layer and has a second Al composition ratio greater than the first Al composition ratio, and a graded layer that is located between the n-type cladding layer and the barrier layer and has a third Al composition ratio that is between the first Al composition ratio and the second Al composition ratio, wherein the third Al composition ratio of the graded layer increases at a predetermined increase rate from the first Al composition ratio toward the second Al composition ratio.

Abstract: A nitride semiconductor light-emitting element includes an n-type cladding layer including n-type AlGaN and having a first Al composition ratio, and a multiple quantum well layer in which a plurality (number N) of barrier layers including AlGaN having a second Al composition ratio more than the first Al composition ratio and a plural (number N) well layers having an Al composition ratio less than the second Al composition ratio are stacked alternately in this order, wherein the second Al composition ratio of the plurality of barrier layers of the multiple quantum well layer increases at a predetermined increase rate from an n-type cladding layer side toward an opposite side to the n-type cladding layer side.

Abstract: A nitride semiconductor light-emitting element includes an n-type cladding layer including n-type AlGaN, and a multiple quantum well layer including a barrier layer that includes AlGaN and is located on the n-type cladding layer side, wherein the nitride semiconductor light-emitting element further comprises a trigger layer that is located between the n-type cladding layer and the barrier layer and comprises Si, wherein a plural V-pits starting from dislocations in the n-type cladding layer and ending in the multiple quantum well are formed in the n-type cladding layer and the multiple quantum well layer.

Abstract: A semiconductor light emitting element includes: an n-type clad layer formed of an n-type aluminum gallium nitride (AlGaN) based semiconductor material; an intermediate layer provided on the n-type clad layer and having a higher oxygen (O) concentration than the n-type clad layer; an active layer provided on the intermediate layer and formed of an AlGaN-based semiconductor material; and a p-type semiconductor layer provided on the active layer. The intermediate layer may contain at least oxygen (O) and aluminum (Al).

Abstract: A semiconductor light emitting element includes: an n-type clad layer formed of an n-type aluminum gallium nitride (AlGaN) based semiconductor material; an intermediate layer provided on the n-type clad layer and having a higher oxygen (O) concentration than the n-type clad layer; an active layer provided on the intermediate layer and formed of an AlGaN-based semiconductor material; and a p-type semiconductor layer provided on the active layer. The intermediate layer may contain at least oxygen (O) and aluminum (Al).

Abstract: An ultraviolet light emitting device having high quality and high reliability is provided by preventing deterioration of electrical characteristics which is associated with an ultraviolet light emission operation and caused by a sealing resin.

Abstract: An ultraviolet light emitting device having high quality and high reliability is provided by preventing deterioration of electrical characteristics which is associated with an ultraviolet light emission operation and caused by a sealing resin. The ultraviolet light emitting device is an ultraviolet light emitting device including: an ultraviolet light emitting element (2) formed of a nitride semiconductor; and an ultraviolet-transparent sealing resin (3) covering the ultraviolet light emitting element (2), wherein at least a specific portion (3a) of the sealing resin (3), which is in contact with pad electrodes (18) and (17) of the ultraviolet light emitting element (2), is a first type amorphous fluororesin, and a terminal functional group of a polymer or a copolymer that forms the first type amorphous fluororesin is a nonreactive terminal functional group which is not bondable to a metal that forms the pad electrodes (16) and (17).

Abstract: An ultraviolet light emitting device having high quality and high reliability is provided by preventing deterioration of electrical characteristics which is associated with an ultraviolet light emission operation and caused by a sealing resin.

Abstract: An ultraviolet light emitting device having high quality and high reliability is provided by preventing deterioration of electrical characteristics which is associated with an ultraviolet light emission operation and caused by a sealing resin. The ultraviolet light emitting device is an ultraviolet light emitting device including: an ultraviolet light emitting element (2) formed of a nitride semiconductor; and an ultraviolet-transparent sealing resin (3) covering the ultraviolet light emitting element (2), wherein at least a specific portion (3a) of the sealing resin (3), which is in contact with pad electrodes (18) and (17) of the ultraviolet light emitting element (2), is a first type amorphous fluororesin, and a terminal functional group of a polymer or a copolymer that forms the first type amorphous fluororesin is a nonreactive terminal functional group which is not bondable to a metal that forms the pad electrodes (16) and (17).