Abstract: The present technology relates to a solid-state image sensor, a photoelectric conversion film, an electron blocking layer, an imaging apparatus, and an electronic device that can appropriately photoelectrically convert light of specific wavelengths with high spectral characteristics and high photoelectric conversion efficiency. A photoelectric conversion layer or an electron blocking layer is configured with a photoelectric conversion film made of only a compound represented by Chemical Formula (1). The present technology can be applied to a solid-state image sensor.

Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.

Abstract: A first photoelectric conversion element according to an embodiment of the present disclosure incudes: a first electrode; a second electrode disposed to be opposed to the first electrode; and a photoelectric conversion layer provided between the first electrode and the second electrode and including a chromophore, fullerene or a fullerene derivative, and a hole-transporting material, in which the chromophore and the fullerene or the fullerene derivative are bonded to each other at least partially via a crosslinking group in the photoelectric conversion layer.

Abstract: There is provided a photoelectric conversion film including a quinacridone derivative represented by the following General formula and a subphthalocyanine derivative represented by the following General formula.

Abstract: To provide a photo-electric conversion element in which responsiveness and external quantum efficiency are improved. Provided is an organic photo-electric conversion element 10 including: an organic photo-electric conversion layer 13 sandwiched by a first electrode 11 and a second electrode 15. The organic photo-electric conversion layer 13 contains organic molecules of a quinacridone (QD) derivative and a subphthalocyanine (SubPc) derivative, and at least the quinacridone derivative out of the organic molecules is in random orientation.

Abstract: A photoelectric conversion element of the present disclosure includes a first electrode, a second electrode disposed to be opposed to the first electrode, and an organic photoelectric conversion layer provided between the first electrode and the second electrode and including at least one of a Chryseno[1,2-b:8,7-b?]dithiophene (ChDT1) derivative represented by the general formula (1) or a Chryseno[1,2-b:7,8-b?]dithiophene (ChDT2) derivative represented by the general formula (2).

Abstract: Provided is a phased array antenna which can be used in the millimeter wave band and whose cost is lower than that of a conventional phased array antenna. The phased array antenna (1) includes: an optical modulator (OM) configured to generate a signal light beam SL by carrying out intensity modulation on a carrier light beam CL by use of a sum signal VIF+LO(t), the sum signal VIF+LO(t) being obtained by adding an intermediate frequency signal VIF(t) and a local signal VLO(t); and a time delay device (TD) configured to generate delayed signal light beams SL?1, SL?2, . . . and SL?n by imparting time delays ?t1, ?t2, . . . and ?tn to the signal light beam SL. Each feeding circuit (Fi) generates, from a corresponding delayed signal light beam SL?i, a delayed radio frequency signal VRF(t??ti) to be supplied to an antenna element (Ai).

Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed to the first electrode; and a photoelectric conversion layer provided between the first electrode and the second electrode and including an organic semiconductor material represented by the following general formula (1), in which the organic semiconductor material includes, in at least one of R2 or R6, a substituent represented by the following general formula (2).

Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed to the first electrode; and a photoelectric conversion layer disposed to be opposed to and between the first electrode and the second electrode, in which the photoelectric conversion layer includes a first compound represented by the general formula and a second compound having a skeleton different from the first compound.

Abstract: To provide a photo-electric conversion element in which responsiveness and external quantum efficiency are improved. Provided is an organic photo-electric conversion element including: an organic photo-electric conversion layer sandwiched by a first electrode and a second electrode. The organic photo-electric conversion layer contains organic molecules of a quinacridone (QD) derivative and a subphthalocyanine (SubPc) derivative, and at least the quinacridone derivative out of the organic molecules is in random orientation.

Abstract: Provided is a phased array antenna in which a delay time of a radio frequency signal supplied to each antenna element is not dependent on frequency. Each feeding circuit (Fi) of the phased array antenna (1) includes: a time delay element (TDi) configured to impart a time delay ?ti to a sum signal VIF+LO(t) which is obtained by adding an intermediate frequency signal VIF(t) and a local signal VLO(t); a demultiplexer (DPi) configured to demultiplex a resulting delayed sum signal VIF+LO(t??ti) so as to provide a delayed intermediate frequency signal VIF(t??ti) and a delayed local signal VLO(t??ti); and a transmission mixer (TMXi) configured to multiply the delayed intermediate frequency signal VIF(t??ti) by the delayed local signal VLO(t??ti) so as to provide a delayed radio frequency signal VRF(t??ti), each feeding circuit Fi being configured to supply the delayed radio frequency signal VRF(t??ti) to a corresponding antenna element (Ai).

Abstract: To stabilize radiation characteristics of a radiation element by reducing bending deformation of the radiation element and widen a band of an antenna. An antenna includes: a first flexible dielectric layer; a conductive pattern layer formed on a surface of the first dielectric layer; a second flexible dielectric layer joined to the first dielectric layer on a side opposite to the conductive pattern layer with respect to the first dielectric layer; a conductive ground layer formed between the first dielectric layer and the second dielectric layer; a rigid dielectric substrate joined to the second dielectric layer on a side opposite to the conductive ground layer with respect to the second dielectric layer; and an antenna pattern layer formed between the second dielectric layer and the dielectric substrate and including one or more radiation elements, the conductive pattern layer including a feed line for supplying electric power to the radiation elements.

Abstract: A photoelectric conversion element of the present disclosure includes: a first electrode: a second electrode opposed to the first electrode; and an organic layer provided between the first electrode and the second electrode, and including an organic photoelectric conversion layer, and at least one layer included in the organic layer is formed including at least one kind of organic semiconductor material represented by a general expression (1).

Abstract: Provided is a phased array antenna which can be used in the millimeter wave band and whose cost is lower than that of a conventional phased array antenna. The phased array antenna (1) includes: an optical modulator (OM) configured to generate a signal light beam SL by carrying out intensity modulation on a carrier light beam CL by use of a sum signal VIF+LO(t), the sum signal VIF+LO(t) being obtained by adding an intermediate frequency signal VIF(t) and a local signal VLO(t); and a time delay device (TD) configured to generate delayed signal light beams SL?1, SL?2, . . . and SL?n by imparting time delays ?t1, ?t2, . . . and ?tn to the signal light beam SL. Each feeding circuit (Fi) generates, from a corresponding delayed signal light beam SL?i, a delayed radio frequency signal VRF(t??ti) to be supplied to an antenna element (Ai).

Abstract: A method for manufacturing a touch panel having a sensing area that includes a conductive part made up of thin-line mesh includes a step of designing the thin-line mesh, the thin-line mesh including a plurality of intersections, wherein the intersection forms therearound an acute angular area and an obtuse angular area, the acute angular area being defined between a pair of adjacently converging thin lines that forms an acute angle therebetween, the obtuse angular area being defined between a pair of adjacently converging thin lines that forms an obtuse angle therebetween, a step of filling electrically conductive ink into a printing plate by a squeezing process using a doctor blade, the printing plate having a groove pattern that conforms with the thin-line mesh, and a step of forming the conductive part by printing, in which the electrically conductive ink is transferred to a surface of a base member.

Abstract: There is provided a photoelectric conversion film including a quinacridone derivative represented by the following General formula (1) and a subphthalocyanine derivative represented by the following General formula (2).

Abstract: A photoelectric conversion element uses organic materials and is provided with improved quantum efficiency and response rate. The organic photoelectric conversion element includes, in a photoelectric conversion layer, p-type molecules represented by Formula (1): in which A represents any one of oxygen, sulfur or selenium, any one of R1 to R4 represents a substituted or unsubstituted aryl or heteroaryl having 4 to 30 carbon atoms, the remainder of R1 to R4 each represent hydrogen, any one of R5 to R8 represents a substituted or unsubstituted aryl or heteroaryl having 4 to 30 carbon atoms, and the remainder of R5 to R8 each represent hydrogen.

Abstract: There is provided a photoelectric conversion film including a quinacridone derivative represented by the following General formula and a subphthalocyanine derivative represented by the following General formula.

Abstract: The present invention provides an antenna device that has a radiation pattern whose peak direction is independent of a frequency of an electromagnetic wave emitted. The antenna device includes: a ground layer (11) made of an electric conductor; a plurality of array antennas (22) provided in a layer above the ground layer (11); and a Rotman lens (32) provided in a layer below the ground layer (11). Each array antenna (22i) includes: a power feed line (23Li) at a center of which a feedpoint (23Pi) is located; and a plurality of antenna elements (241i through 248i and 251i through 258i) connected to the power feed line (23Li), and has a point symmetric shape with respect to the feedpoint (23Pi) as a center of symmetry. Each feedpoint (23Pi) is coupled to any one output port (322i) of the Rotman lens (32) via a slot (111i) provided in the ground layer (11).

Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.