Abstract: The present technology provides a semiconductor laser capable of suppressing a decrease in yield while suppressing an influence on laser characteristics. The semiconductor laser according to the present technology includes a resonator having a multilayer structure including: a first cladding layer; a second cladding layer; and an active layer disposed between the first cladding layer and the second cladding layer, the multilayer structure including a pair of resonator end surfaces facing each other. The resonator has a ridge structure extending in a resonator length direction on a surface on a second cladding layer side. A plurality of grooves is provided in at least one of one side portion or the other side portion sandwiching the ridge structure in plan view on the surface of the resonator on the second cladding layer side.

Abstract: A semiconductor laser according to one embodiment of the present disclosure includes: a first semiconductor layer; an active layer; and a second semiconductor layer stacked on the first semiconductor layer with the active layer interposed therebetween, and having a strip-shaped ridge, and a high-resistance region at a foot of the ridge. The semiconductor laser further includes an insulating layer formed so as to be in contact with both side surfaces of the ridge in a width direction of the ridge and to expose at least a portion of the high-resistance region, and an electrode layer in contact with an upper surface of the ridge, and in contact with all or a part of an exposed portion of the high-resistance region which is not covered with the insulating layer.

Abstract: [Object] To provide a semiconductor laser element capable of preventing current leakage in junction-down mounting and a method of producing the semiconductor laser element. [Solving Means] A semiconductor laser element according to the present technology includes: a stacked body. The stacked body includes a substrate, an n-type semiconductor layer that is formed on the substrate, is formed of an n-type semiconductor material, and has a core that is a defect concentration region, an active layer that is formed on the n-type semiconductor layer, and a p-type semiconductor layer that is formed on the active layer and is formed of a p-type semiconductor material, and has a recessed portion formed from a surface of the p-type semiconductor layer to have a depth reaching the core and an ion implantation region that is formed by implanting ions into a region including the core.