Abstract: A laminated element manufacturing method includes a first forming step of forming a first modified region along a line to cut by irradiating a semiconductor substrate of a first wafer with a laser light along the line to cut, a first grinding step of grinding the semiconductor substrate of the first wafer, a bonding step of bonding a circuit layer of a second wafer to the semiconductor substrate of the first wafer, a second forming step of forming a second modified region along the line to cut by irradiating a semiconductor substrate of the second wafer with a laser light along the line to cut, and a second grinding step of grinding the semiconductor substrate of the second wafer.

Abstract: A object cutting method includes a first step of attaching an expandable sheet to a front surface or a back surface of a object, a second step of irradiating the object with a laser light along a line to cut to form a modified region, and expanding the expandable sheet to divide at least a part of the object into a plurality of chips and to form a gap that exists between the chips and extends to a side surface crossing the front surface and the back surface of the object, a third step of, after the second step, filling the gap with a resin from an outer edge portion including the side surface of the object, a fourth step of, after the third step, curing and shrinking the resin, and a fifth step of, after the fourth step, taking out the chips from the expandable sheet.

Abstract: A laser processing device includes: a stage that supports a wafer having a front surface, on which a plurality of functional elements are formed and a street region extends so as to pass between adjacent functional elements, and a back surface on a side opposite to the front surface; a light source that emits laser light to the wafer from the front surface side to form one or more modified regions inside the wafer; a spatial light modulator as a beam width adjusting unit; and a control unit that controls the spatial light modulator so that the beam width of the laser light is adjusted to be equal to or less than the width of the street region and a target beam width according to surface information including the position and height of a structure forming a functional element adjacent to the street region.

Abstract: A laminated element manufacturing method includes a first forming step of forming a first modified region along a line to cut by irradiating a semiconductor substrate of a first wafer with a laser light along the line to cut, a first grinding step of grinding the semiconductor substrate of the first wafer, a bonding step of bonding a circuit layer of a second wafer to the semiconductor substrate of the first wafer, a second forming step of forming a second modified region along the line to cut by irradiating a semiconductor substrate of the second wafer with a laser light along the line to cut, and a second grinding step of grinding the semiconductor substrate of the second wafer.

Abstract: A laminated element manufacturing method includes a first forming step of forming a first modified region along a line to cut by irradiating a semiconductor substrate of a first wafer with a laser light along the line to cut, a first grinding step of grinding the semiconductor substrate of the first wafer, a bonding step of bonding a circuit layer of a second wafer to the semiconductor substrate of the first wafer, a second forming step of forming a second modified region along the line to cut by irradiating a semiconductor substrate of the second wafer with a laser light along the line to cut, and a second grinding step of grinding the semiconductor substrate of the second wafer.

Abstract: A laser processing device including a laser light source that outputs laser light, a measurement light source that outputs measurement light, a converging unit that converges the laser light toward an object to be processed to form a first converging point and converges the measurement light toward the object to be processed to form a second converging point, a measurement part for measuring displacement of an entrance surface according to reflected light of the measurement light on the entrance surface of the laser light and the measurement light in the object to be processed, and an adjustment unit that adjusts a position of the first converging point in a direction intersecting the entrance surface according to a measurement result of the displacement of the entrance surface.

Abstract: A laminating step includes a first bonding step of bonding a circuit layer of a second wafer to a circuit layer of a first wafer, a grinding step of grinding a semiconductor substrate of the second wafer, and a second bonding step of bonding a circuit layer of the third wafer to the semiconductor substrate of the second wafer. In a laser light irradiation step, a modified region is formed and a fracture extends from the modified region along a laminating direction of a laminated body by irradiating the semiconductor substrate of the first wafer with a laser light.

Abstract: Provided is a laser processing method including a first step of forming a first modified region along a cutting line by converging laser light on an object having a surface and a back surface with the back surface as an incident surface and moving a first converging point along the cutting line set to pass between an effective region and an ineffective region adjacent to each other while maintaining a distance between a surface and the first converging point at a first distance, and a second step of forming a second modified region along the cutting line by converging the laser light on the object with the back surface as the incident surface and moving a second converging point along the cutting line while maintaining a distance between the surface and the second converging point at a second distance larger than the first distance.

Abstract: A laminated element manufacturing method includes a first forming step of forming a first gettering region for each of functional elements by irradiating a semiconductor substrate of a first wafer with a laser light, a first grindsing step of grinding the semiconductor substrate of the first wafer and removing a portion of the first gettering region, a bonding step of bonding a circuit layer of a second wafer to the semiconductor substrate of the first wafer, a second forming step of forming a second gettering region for each of the functional elements by irradiating the semiconductor substrate of the second wafer with a laser light, and a second grinding step of grinding the semiconductor substrate of the second wafer and removing a portion of the second gettering region.

Abstract: A laminated element manufacturing method includes a first forming step of forming a first gettering region for each of functional elements by irradiating a semiconductor substrate of a first wafer with a laser light, a first grindsing step of grinding the semiconductor substrate of the first wafer and removing a portion of the first gettering region, a bonding step of bonding a circuit layer of a second wafer to the semiconductor substrate of the first wafer, a second forming step of forming a second gettering region for each of the functional elements by irradiating the semiconductor substrate of the second wafer with a laser light, and a second grinding step of grinding the semiconductor substrate of the second wafer and removing a portion of the second gettering region.

Abstract: A laminated element manufacturing method includes a first forming step of forming a first modified region along a line to cut by irradiating a semiconductor substrate of a first wafer with a laser light along the line to cut, a first grinding step of grinding the semiconductor substrate of the first wafer, a bonding step of bonding a circuit layer of a second wafer to the semiconductor substrate of the first wafer, a second forming step of forming a second modified region along the line to cut by irradiating a semiconductor substrate of the second wafer with a laser light along the line to cut, and a second grinding step of grinding the semiconductor substrate of the second wafer.

Abstract: Laser light is converged at an object including a semiconductor substrate formed with a plurality of functional devices on a front surface, from a back surface of the semiconductor substrate, and while a distance between the front surface and a first converging point of the laser light is maintained at a first distance, whereby a first modified region is formed along the line. The laser light is converged at the object from the back surface, and while a distance between the front surface and a second converging point is maintained at a second distance, and while the second converging point is offset with respect to a position at which the first converging point is converged, whereby a second modified region is formed along the line. A predetermined portion including the back surface and at least the second modified region is removed.

Abstract: A object cutting method includes a first step of attaching an expandable sheet to a front surface or a back surface of a object, a second step of irradiating the object with a laser light along a line to cut to form a modified region, and expanding the expandable sheet to divide at least a part of the object into a plurality of chips and to form a gap that exists between the chips and extends to a side surface crossing the front surface and the back surface of the object, a third step of, after the second step, filling the gap with a resin from an outer edge portion including the side surface of the object, a fourth step of, after the third step, curing and shrinking the resin, and a fifth step of, after the fourth step, taking out the chips from the expandable sheet.

Abstract: A laminating step includes a first bonding step of bonding a circuit layer of a second wafer to a circuit layer of a first wafer, a grinding step of grinding a semiconductor substrate of the second wafer, and a second bonding step of bonding a circuit layer of the third wafer to the semiconductor substrate of the second wafer. In a laser light irradiation step, a modified region is formed and a fracture extends from the modified region along a laminating direction of a laminated body by irradiating the semiconductor substrate of the first wafer with a laser light.

Abstract: Laser light is converged at an object including a semiconductor substrate formed with a plurality of functional devices on a front surface, from a back surface of the semiconductor substrate, and while a distance between the front surface and a first converging point of the laser light is maintained at a first distance, whereby a first modified region is formed along the line. The laser light is converged at the object from the back surface, and while a distance between the front surface and a second converging point is maintained at a second distance, and while the second converging point is offset with respect to a position at which the first converging point is converged, whereby a second modified region is formed along the line. A predetermined portion including the back surface and at least the second modified region is removed.

Abstract: Laser light is converged at an object including a semiconductor substrate formed with a plurality of functional devices on a front surface, from a back surface of the semiconductor substrate, and while a distance between the front surface and a first converging point of the laser light is maintained at a first distance, whereby a first modified region is formed along the line. The laser light is converged at the object from the back surface, and while a distance between the front surface and a second converging point is maintained at a second distance, and while the second converging point is offset with respect to a position at which the first converging point is converged, whereby a second modified region is formed along the line. A predetermined portion including the back surface and at least the second modified region is removed.

Abstract: Laser light is converged at an object including a semiconductor substrate formed with a plurality of functional devices on a front surface, from a back surface of the semiconductor substrate, and while a distance between the front surface and a first converging point of the laser light is maintained at a first distance, whereby a first modified region is formed along the line. The laser light is converged at the object from the back surface, and while a distance between the front surface and a second converging point is maintained at a second distance, and while the second converging point is offset with respect to a position at which the first converging point is converged, whereby a second modified region is formed along the line. A predetermined portion including the back surface and at least the second modified region is removed.

Abstract: Provided is a laser processing method including a first step of forming a first modified region along a cutting line by converging laser light on an object having a surface and a back surface with the back surface as an incident surface and moving a first converging point along the cutting line set to pass between an effective region and an ineffective region adjacent to each other while maintaining a distance between a surface and the first converging point at a first distance, and a second step of forming a second modified region along the cutting line by converging the laser light on the object with the back surface as the incident surface and moving a second converging point along the cutting line while maintaining a distance between the surface and the second converging point at a second distance larger than the first distance.

Abstract: A laser processing method includes: a first step of converging laser light having a wavelength larger than 1064 nm on an object to be processed with a rear face of a silicon substrate as a laser light entrance surface and moving a first converging point of the laser light along a line to cut, and thereby forming a first modified region along the line to cut; and a second step of converging the laser light having a wavelength larger than 1064 nm on the object to be processed with the rear face as the laser light entrance surface after the first step and moving a second converging point of the laser light along the line to cut while offsetting the second converging point with respect to a position where the first converging point is aligned, and there by forming a second modified region along the line to cut.