Abstract: The onium salt is capable of generating an acid with controlled diffusion, a chemically amplified positive resist composition comprising the onium salt. The onium salt contains a fluorinated alkanesulfonic acid anion having an alkyl or fluoroalkyl group and an iodized aromatic ring generates an acid with controlled diffusion. A chemically amplified positive resist composition comprising the onium salt is also provided.

Abstract: A resist composition comprising a base polymer, a photoacid generator, and a quencher is provided. The base polymer contains a polymer comprising phenolic hydroxy-containing units, aromatic ring-containing units, and units containing a phenolic hydroxy group protected with an acid labile group. A resist film is processed into a pattern of satisfactory profile exhibiting a high resolution, reduced LER, and rectangularity while the influence of residue defects is restrained.

Abstract: There is provided a photoelectric conversion film including a quinacridone derivative represented by the following General formula and a subphthalocyanine derivative represented by the following General formula.

Abstract: An acetal modifier affording a group having an oxygen or sulfur-containing cyclic saturated heterocycle serving as a protective group for an aliphatic or aromatic hydroxy group is provided as well as a polymer adapted to turn alkali soluble as a result of deprotection under the action of acid, the polymer comprising repeat units A1 having on side chain a structure including an aromatic hydroxy group protected with an acid labile group. A chemically amplified positive resist composition comprising the polymer is also provided.

Abstract: A chemically amplified positive resist composition is provided comprising a polymer comprising repeat units having a phenolic hydroxy group protected with a tertiary ether type acid labile group and an acid generator capable of generating a fluorinated aromatic sulfonic acid. A resist pattern with a high resolution, reduced LER, rectangularity, minimized influence of develop loading, and few development residue defects can be formed.

Abstract: The chemically amplified negative resist composition has improved in resolution during pattern formation, which can form a resist pattern having improved LER, fidelity, and dose margin. The chemically amplified negative resist composition comprises a polymer comprising repeat units derived from a monomer having a dehydrating functional group is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with improved LER, fidelity, and dose margin.

Abstract: A chemically amplified positive resist composition is provided comprising (A) a quencher containing an onium salt having a nitrogen-containing aliphatic heterocycle and an aromatic carboxylic acid structure in its anion and (B) a base polymer containing a specific polymer which is decomposed under the action of acid to increase its solubility in alkaline developer. The resist composition exhibits a high resolution during pattern formation and forms a pattern of rectangular profile with improved LER, fidelity and dose margin.

Abstract: A chemically amplified positive resist composition is provided comprising (A) a quencher containing an onium salt having a nitrogen-containing aliphatic heterocycle and an aromatic carboxylic acid structure in its anion and (B) a base polymer containing a specific polymer which is decomposed under the action of acid to increase its solubility in alkaline developer. The resist composition exhibits a high resolution during pattern formation and forms a pattern of rectangular profile with improved LER, fidelity and dose margin.

Abstract: A chemically amplified negative resist composition comprising (A) a quencher in the form of an onium salt containing an anion having a nitrogen-containing aliphatic heterocycle and a fluorocarboxylic acid structure and (B) a base polymer is provided. The resist composition forms a pattern of rectangular profile with improved LER, resolution, fidelity, and dose margin.

Abstract: A chemically amplified positive resist composition is provided comprising (A) a quencher containing an onium salt having a nitrogen-containing aliphatic heterocycle and a fluorocarboxylic acid structure in its anion and (B) a base polymer containing a specific polymer which is decomposed under the action of acid to increase its solubility in alkaline developer. The resist composition exhibits a high resolution during pattern formation and forms a pattern of rectangular profile with improved LER, fidelity and dose margin.

Abstract: An acetal modifier affording a triple bond-bearing group serving as a protective group for an aliphatic or aromatic hydroxy group is provided as well as a polymer adapted to turn alkali soluble as a result of deprotection under the action of acid, the polymer comprising repeat units A1 having on side chain a structure including an aromatic hydroxy group protected with a triple bond-bearing group acid labile group. A chemically amplified positive resist composition comprising the polymer is also provided.

Abstract: A chemically amplified negative resist composition comprising (A) a photoacid generator in the form of an onium salt of aromatic sulfonic acid whose anion has a ring structure fused to an aromatic ring having a sulfo group bonded thereto and another aromatic ring structure containing a bulky substituent and (B) a base polymer is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with improved LER and fidelity.

Abstract: This invention relates to an onium salt, a chemically amplified positive resist composition, and a resist pattern forming process. The invention provides an onium salt capable of generating an acid having an adequate acid strength and low diffusion, a chemically amplified positive resist composition comprising the onium salt, and a resist pattern forming process using the composition. The chemically amplified positive resist composition comprises an onium salt capable of generating an acid having an adequate acid strength and suppressed diffusion is provided.

Abstract: The present invention is a conductive polymer composition containing: (A) a polyaniline-based conductive polymer having at least one repeating unit of the formula (1); and (B) a hydrogencarbonate including a cation of the formula (2-1) or (2-2). Here, R1 to R4 each represent a hydrogen atom, an acidic group, a hydroxy group, a nitro group, a halogen atom, a linear or branched alkyl group, a hydrocarbon group containing a hetero atom, or a hydrocarbon group partially substituted with a halogen atom. X represents a monovalent alkali metal selected from lithium, sodium, potassium, and cesium, R101 to R104 each represent a hydrogen atom, an alkyl group, an alkenyl group, an oxoalkyl group, an oxoalkenyl group, an aryl group, an aralkyl group, or an aryloxoalkyl group. R101 and R102, R103 and R104, and R101, R102, and R104 optionally form a ring. This provides a conductive polymer composition that can form an antistatic film for electron beam resist writing.

Abstract: A polymer containing a structural unit including an aromatic hydroxy group bonded to a main chain, where the aromatic hydroxy group is protected by an acid-labile group represented by the following formula (ALU-1) and is deprotected by action of an acid to become alkali-soluble. This provides: a polymer that makes it possible to form a resist film with which it is possible to form a pattern having extremely high isolated space resolution, small LER, and excellent rectangularity, effects of development loading and residue defects being suppressed, and the pattern having etching resistance and suppressed pattern collapse in the produced resist pattern; a chemically amplified positive resist composition containing the polymer; a resist patterning process using the chemically amplified positive resist composition; and a mask blank including the chemically amplified positive resist composition.

Abstract: A chemically amplified positive resist composition is provided comprising a polymer comprising units containing a phenolic hydroxy group and units containing a phenolic hydroxy group protected with an acid labile group, in which a carbon atom neighboring the carbon atom to which the phenolic hydroxy group protected with an acid labile group is attached is substituted with a specific group. A resist pattern with a high resolution, reduced LER, rectangularity, minimized influence of develop loading, and few development residue defects can be formed.

Abstract: A chemically amplified positive resist composition comprising (A) a base polymer, (B) a photoacid generator, and (C) a quencher is provided. The base polymer (A) contains a polymer comprising phenolic hydroxy group-containing units, aromatic ring-containing units, and units containing a phenolic hydroxy group protected with an acid labile group. The photoacid generator (B) and the quencher (C) are present in a weight ratio (B)/(C) of less than 3/1. The resist composition exhibits a very high isolated-space resolution and forms a pattern with reduced LER, rectangularity, minimized influences of develop loading and residue defects.

Abstract: The present invention is a sulfonium salt represented by the following formula (1), wherein “p” represents an integer of 1 to 3; R11 represents a hydrocarbyl group having 1 to 20 carbon atoms; Rf represents a fluorine atom or a fluorine-atom-containing C1 to C6 group selected from alkyl, alkoxy, and sulfide; “q” represents an integer of 1 to 4; RALU represents an acid-labile group; “r” represents an integer of 1 to 4; R12 represents a hydrocarbyl group having 1 to 20 carbon atoms; “s” represents an integer of 0 to 4; “t” represents an integer of 0 to 2; Rf and —O—RALU are bonded to adjacent carbon atoms; and X? represents a non-nucleophilic counterion having no polymerizable group.

Abstract: A chemically amplified positive resist composition is provided comprising (A) an acid diffusion-controlling agent in the form of an onium salt compound having a specific phenoxide anion, (B) a polymer comprising specific repeat units and adapted to be decomposed under the action of acid to increase its solubility in alkaline developer, and (C) a photoacid generator. A resist pattern with a high resolution, reduced LER, and improved CDU is formed. Because of minimal defects, the resist pattern can be inspected with light of short wavelength 300-400 nm.