Abstract: A backup power supply control system includes: a first semiconductor switch that switches a main power supply line to an electrically conductive state or an electrically non-conductive state; and an auxiliary power supply switch that switches an auxiliary power supply line to the electrically conductive state or the electrically non-conductive state. A first driving unit controls, in a non-failure state, a second semiconductor switch, connected between a gate and source of a first semiconductor switch, OFF and thereby controls the first semiconductor switch ON. The first driving unit ensures, in the failure state, at least a gate-plateau voltage of the first semiconductor switch as a drive voltage for the second semiconductor switch. When a failure detection unit detects the failure state, the first driving unit controls the first semiconductor switch OFF by controlling the second semiconductor switch ON and a second driving unit controls the auxiliary power supply switch ON.

Abstract: A power loss of a switching device is suppressed. Circuit for a switching device is used in switching device. Switching device includes first path and second path. First path includes first field effect transistor and first inductor. Second path includes second field effect transistor and second inductor. First path and second path are connected in parallel to power supply. A first maximum current that is a maximum current during conduction of first field effect transistor is smaller than a second maximum current that is a maximum current during conduction of second field effect transistor. Circuit for a switching device includes processing part. Processing part executes a specific operation according to a voltage difference between voltage across first inductor and voltage across second inductor.

Abstract: In a backup power supply system according to the present invention, in a non-defective state in which a main power supply is not defective, a controller turns on a first field-effect transistor and causes a third field-effect transistor to operate in an active region so as to charge the power storage device from the main power supply via a charging path through the first field-effect transistor, the second field-effect transistor, and the third field-effect transistor. In a defective state in which the main power supply is defective, the controller turns off the first field-effect transistor and turns on the second field-effect transistor and the third field-effect transistor so as to supply power from the power storage device to the load.

Abstract: A backup power supply system (1) includes a first terminal (T1), a second terminal (T2), a disconnect device (10), a current detector (20), a charge/discharge device (30), an auxiliary power supply (40), and a controller (50). The disconnect device (10) is connected between the first terminal (T1) configured to be connected to a main power supply (2) and the second terminal (T2) configured to be connected to a load (3). The charge/discharge device (30) is connected between the auxiliary power supply (40) and a node (P1) between the disconnect device (10) and the second terminal (T2). The charge/discharge device (30) is configured to receive power supplied from main power supply (2) to cause a charging current to flow to the auxiliary power supply (40) in a non-defective state in which the main power supply (2) is not defective.

Abstract: A backup power supply control system includes: a first semiconductor switch that switches a main power supply line to an electrically conductive state or an electrically non-conductive state; and an auxiliary power supply switch that switches an auxiliary power supply line to the electrically conductive state or the electrically non-conductive state. A first driving unit controls, in a non-failure state, a second semiconductor switch, connected between a gate and source of a first semiconductor switch, OFF and thereby controls the first semiconductor switch ON. The first driving unit ensures, in the failure state, at least a gate-plateau voltage of the first semiconductor switch as a drive voltage for the second semiconductor switch. When a failure detection unit detects the failure state, the first driving unit controls the first semiconductor switch OFF by controlling the second semiconductor switch ON and a second driving unit controls the auxiliary power supply switch ON.

Abstract: An electrical storage device control system includes a plurality of electrical storage devices and a plurality of charger circuits. The plurality of electrical storage devices are charged by a main power supply. The plurality of charger circuits are connected between the main power supply and the plurality of electrical storage devices. A mode of connection between the plurality of electrical storage devices being charged is switched to either a first connection mode or a second connection mode, depending on a voltage difference between an input voltage for the main power supply and a charging voltage based on respective voltages at the plurality of electrical storage devices. In the first connection mode, the plurality of electrical storage devices are connected together in series. In the second connection mode, the plurality of electrical storage devices are connected in parallel to the main power supply.

Abstract: A backup power supply system is designed to supply, when a power supply has caused a failure, power from a first electrical storage device to a plurality of loads. The plurality of loads includes a first load and a second load. The first load is connected to a first power supply line. The backup power supply system includes a backflow prevention switch provided between the first load and the second load on the first power supply line and making the first power supply line electrically conductive or non-conductive by turning ON and OFF. The backflow prevention switch includes an internal diode having an anode connected to one side including the first load and a cathode connected to the other side including the second load.

Abstract: A power loss of a switching device is suppressed. Circuit for a switching device is used in switching device. Switching device includes first path and second path. First path includes first field effect transistor and first inductor. Second path includes second field effect transistor and second inductor. First path and second path are connected in parallel to power supply. A first maximum current that is a maximum current during conduction of first field effect transistor is smaller than a second maximum current that is a maximum current during conduction of second field effect transistor. Circuit for a switching device includes processing part. Processing part executes a specific operation according to a voltage difference between voltage across first inductor and voltage across second inductor.

Abstract: A gate drive circuit that drives a power device by controlling charge and discharge of gate capacitance of the power device includes: a first semiconductor switch that charges the gate capacitance by being brought into conduction according to a first control signal; a second semiconductor switch that discharges the gate capacitance by being brought into conduction according to a second control signal; and a slew rate control circuit that is connected between a gate of the power device and a ground line, and controls a slew rate during discharge. The slew rate control circuit includes a capacitor and a third semiconductor switch connected in series. The third semiconductor switch is brought into conduction according to the second control signal.