Abstract: A method of processing a target object is provided. The target object has an etching target layer, an organic film on the etching target layer and a mask on the organic film. The organic film includes a first layer and a second layer, the mask is provided on the first layer, the first layer is provided on the second layer, and the second layer is provided on the etching target layer. The method includes generating plasma of a first gas within a processing vessel of a plasma processing apparatus in which the target object is accommodated; etching the first layer with the plasma of the first gas and the mask until the second layer is exposed; and conformally forming a protection film on a side surface of the first layer; and generating plasma of a second gas and removing the mask with the plasma of the second gas.

Abstract: A method MT according to an embodiment provides a technique capable of controlling a pattern shape during processing of an organic film and the like. A wafer W as an object to which the method MT in the embodiment is applied includes an etching target layer EL, an organic film OL, and a mask ALM, the organic film OL is constituted by a first region VL1 and a second region VL2, the mask ALM is provided on the first region VL1, the first region VL1 is provided on the second region VL2, and the second region VL2 is provided on the etching target layer EL. In the method MT, the first region VL1 is etched to reach the second region VL2 by generating a plasma of a gas containing nitrogen gas in the processing container 12 in which the wafer W is accommodated, a mask OLM1 is formed from the first region VL1, a protective film SX is conformally formed on a side surface SF of the mask OLM1, the second region VL2 is etched to reach the etching target layer EL to form a mask OLM2 from the second region VL2.

Abstract: A method MT according to an embodiment provides a technique capable of controlling a pattern shape during processing of an organic film and the like. A wafer W as an object to which the method MT in the embodiment is applied includes an etching target layer EL, an organic film OL, and a mask ALM, the organic film OL is constituted by a first region VL1 and a second region VL2, the mask ALM is provided on the first region VL1, the first region VL1 is provided on the second region VL2, and the second region VL2 is provided on the etching target layer EL. In the method MT, the first region VL1 is etched to reach the second region VL2 by generating a plasma of a gas containing nitrogen gas in the processing container 12 in which the wafer W is accommodated, a mask OLM1 is formed from the first region VL1, a protective film SX is conformally formed on a side surface SF of the mask OLM1, the second region VL2 is etched to reach the etching target layer EL to form a mask OLM2 from the second region VL2.

Abstract: A method of processing a target object is provided. The target object has an etching target layer, an organic film on the etching target layer and a mask on the organic film. The organic film includes a first layer and a second layer, the mask is provided on the first layer, the first layer is provided on the second layer, and the second layer is provided on the etching target layer. The method includes generating plasma of a first gas within a processing vessel of a plasma processing apparatus in which the target object is accommodated; etching the first layer with the plasma of the first gas and the mask until the second layer is exposed; and conformally forming a protection film on a side surface of the first layer; and generating plasma of a second gas and removing the mask with the plasma of the second gas.

Abstract: A plasma etching method is provided to perform a desired etching by switching a process condition while maintaining plasma by supplying high frequency power. A first plasma etching process is performed based on a first process condition. A second plasma etching process different from the first process conditions is performed based on a second process condition while supplying first high frequency power having first effective power. Second high frequency power having second effective power is intermittently supplied between the first plasma etching process and the second plasma etching process during a switch from the first plasma etching process to the second plasma etching process. The second effective power of the second high frequency power is equal to or lower than the first effective power of the first high frequency power in the second plasma etching process.

Abstract: A plasma etching method is provided to perform a desired etching by switching a process condition while maintaining plasma by supplying high frequency power. A first plasma etching process is performed based on a first process condition. A second plasma etching process different from the first process conditions is performed based on a second process condition while supplying first high frequency power having first effective power. Second high frequency power having second effective power is intermittently supplied between the first plasma etching process and the second plasma etching process during a switch from the first plasma etching process to the second plasma etching process. The second effective power of the second high frequency power is equal to or lower than the first effective power of the first high frequency power in the second plasma etching process.

Abstract: A plasma etching method includes etching an amorphous carbon film by a plasma of an oxygen-containing gas using, as a mask, an SiON film having a predetermined pattern formed on a target object, etching a silicon oxide film by a plasma of a processing gas using the amorphous carbon film as a mask while removing the SiON film remaining on the etched amorphous carbon film by the plasma of the processing gas. The plasma etching method further includes modifying the amorphous carbon film by a plasma of a sulfur-containing gas or a hydrogen-containing gas while applying a negative DC voltage to an upper electrode containing silicon after the SiON film is removed from the amorphous carbon film, and etching the silicon oxide film again by the plasma of the processing gas using the modified amorphous carbon film as a mask.

Abstract: A plasma etching method includes etching an amorphous carbon film by a plasma of an oxygen-containing gas using, as a mask, an SiON film having a predetermined pattern formed on a target object, etching a silicon oxide film by a plasma of a processing gas using the amorphous carbon film as a mask while removing the SiON film remaining on the etched amorphous carbon film by the plasma of the processing gas. The plasma etching method further includes modifying the amorphous carbon film by a plasma of a sulfur-containing gas or a hydrogen-containing gas while applying a negative DC voltage to an upper electrode containing silicon after the SiON film is removed from the amorphous carbon film, and etching the silicon oxide film again by the plasma of the processing gas using the modified amorphous carbon film as a mask.