Abstract: A headset includes: a microphone, a first transmission line that transmits a first electrical signal generated by the microphone to an external device; an operation switch that receives an operation for switching between (i) a non-mute state in which the first electrical signal is transmitted to the external device and (ii) a mute state in which the first electrical signal is not transmitted to the external device; an electronic switch that switches between (i) a conductive state in which the first electrical signal is transmitted and (ii) a non-conductive state in which the first electrical signal is not transmitted, on the basis of a control voltage which changes according to the state of the operation switch; and a voltage generator that generates the control voltage.

Abstract: A headset includes: a microphone, a first transmission line that transmits a first electrical signal generated by the microphone to an external device; an operation switch that receives an operation for switching between (i) a non-mute state in which the first electrical signal is transmitted to the external device and (ii) a mute state in which the first electrical signal is not transmitted to the external device; an electronic switch that switches between (i) a conductive state in which the first electrical signal is transmitted and (ii) a non-conductive state in which the first electrical signal is not transmitted, on the basis of a control voltage which changes according to the state of the operation switch; and a voltage generator that generates the control voltage.

Abstract: An electro-acoustic transducer includes: a housing; a fixed electrode; a diaphragm that oscillates in accordance with a potential difference between the diaphragm and the fixed electrode generated based on the electric signal, the diaphragm being provided to face the fixed electrode; and a support part that supports the partial region of the diaphragm toward the fixed electrode, the support part including a displacement part that is displaced in a direction in which the diaphragm is displaced in response to a change in pressure inside the housing, and a contacting part contacts the partial region of the diaphragm, wherein a distance between the diaphragm and the fixed electrode in the partial region is less than a distance between the diaphragm and the fixed electrode outside the partial region.

Abstract: An evaluation apparatus which evaluates a sample. The apparatus includes a light source which irradiates the sample with light, an imaging spectrometer which spectroscopically measures light reflected by the sample and senses an image, a first calculator which obtains amplitude information on an amplitude of a spectral reflectance of the sample based on the image sensed by the imaging spectrometer within a predetermined wavelength range of spectral reflectance spectra obtained by the spectrometer, a memory which holds in advance relationship information representing a relationship between the amplitude information of the spectral reflectance and an absorption coefficient, and a second calculator which obtains an absorption coefficient of the sample based on the amplitude information obtained by the first calculator and the relationship information held in the memory.

Abstract: An evaluation apparatus which evaluates a sample. The apparatus includes a light source which irradiates the sample with light, an imaging spectrometer which spectroscopically measures light reflected by the sample and senses an image, a first calculator which obtains amplitude information on an amplitude of a spectral reflectance of the sample based on the image sensed by the imaging spectrometer within a predetermined wavelength range of spectral reflectance spectra obtained by the spectrometer, a memory which holds in advance relationship information representing a relationship between the amplitude information of the spectral reflectance and an absorption coefficient, and a second calculator which obtains an absorption coefficient of the sample based on the amplitude information obtained by the first calculator and the relationship information held in the memory.

Abstract: An evaluation apparatus which evaluates a sample having a porous layer. The apparatus includes a light source which irradiates the sample with light, an imaging spectrometer which spectroscopically measures light reflected by the sample and senses an image, a first calculator which obtains amplitude information on an amplitude of a spectral reflectance of the sample based on the image sensed by the imaging spectrometer, a memory which holds in advance relationship information representing a relationship between amplitude information of spectral reflectance of a member having a porous layer and an absorption coefficient of the porous layer of the member, and a second calculator which obtains an absorption coefficient of the sample based on the amplitude information obtained by the first calculator and the relationship information held in the memory.

Abstract: A semiconductor substrate which effectively prevents a chipping phenomenon, wherein the outer peripheral extremity of the insulation layer is located between the outer peripheral extremity of the semiconductor layer and the outer peripheral extremity of the support member, and wherein the semiconductor layer and the insulation layer produce a stepped profile.

Abstract: A method of manufacturing a semiconductor substrate can effectively prevent a chipping phenomenon and the production of debris from occurring in part of the insulation layer and the semiconductor by removing a outer peripheral portion of the semiconductor substrate so as to make the outer peripheral extremity of the insulation layer to be located between the outer peripheral extremity of the semiconductor layer and that of the support member and hence the semiconductor layer and the insulation layer produce a stepped profile.

Abstract: An evaluation apparatus includes a light source which irradiates a substrate with light, an imaging spectrometer which spectroscopically measures light reflected by the substrate and senses an image, a first calculator which obtains amplitude information on the amplitude of the spectral reflectance of the substrate based on the image sensed by the imaging spectrometer, a memory which holds in advance relationship information (approximate expression) representing the relationship between the amplitude information of the spectral reflectance and an absorption coefficient, and a second calculator which obtains the absorption coefficient of the substrate based on the amplitude information obtained by the first calculator and the relationship information (approximate expression) held in the memory.

Abstract: A method of manufacturing a semiconductor substrate can effectively prevent a chipping phenomenon and the production of debris from occurring in part of the insulation layer and the semiconductor by removing a outer peripheral portion of the semiconductor substrate so as to make the outer peripheral extremity of the insulation layer to be located between the outer peripheral extremity of the semiconductor layer and that of the support member and hence the semiconductor layer and the insulation layer produce a stepped profile.

Abstract: A method of manufacturing a semiconductor substrate can effectively prevent a chipping phenomenon and the production of debris from occurring in part of the insulation layer and the semiconductor by removing a outer peripheral portion of the semiconductor substrate so as to make the outer peripheral extremity of the insulation layer to be located between the outer peripheral extremity of the semiconductor layer and that of the support member and hence the semiconductor layer and the insulation layer produce a stepped profile.

Abstract: A semiconductor device having a semiconductor layer formed on a substrate having an insulating surface, comprises a first region formed by processing the semiconductor layer from one major surface thereof, and a second region formed by processing the semiconductor layer from the other major surface, the first and second regions cooperating to constitute a semiconductor function element, isolation region or the like.

Abstract: An object of the present invention is to provide an ink jet recording head and an apparatus using the same, wherein electrothermal conversion element for thermally emitting a recording ink is provided at a side of a substrate on which the head structure is formed, thereby reducing a loss in the thermal energy.

Abstract: An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.

Abstract: A semiconductor device having a semiconductor layer formed on a substrate having an insulating surface, comprises a first region formed by processing the semiconductor layer from one major surface thereof, and a second region formed by processing the semiconductor layer from the other major surface, the first and second regions cooperating to constitute a semiconductor function element, isolation region or the like.

Abstract: A method for manufacturing a mask ROM by first forming a contact hole with a semiconductor within. A surface treatment is then applied to supply by hydrogen atoms to the surface of the semiconductor. The contact hole is selectively irradiated with energy beams so as to produce an irradiated contact hole and a non-irradiated contact hole. In the non-irradiated contact hole a conductive or semiconductor thin film is formed and a circuit formed on the conductive or semiconductor thin film. The circuit and the non-irradiated hole are connected to each other and the irradiated hole and the circuit are insulated from each other.

Abstract: An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.

Abstract: An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.

Abstract: A method for producing a substrate for a recording head wherein a plurality of electro-thermal converting elements, a plurality of driving functional elements for respectively driving the electro-thermal converting elements and a plurality of wiring electrodes for respectively connecting each of the driving functional elements and each of the electro-thermal converting elements are formed on a supporting member by photolithography comprises forming the wiring electrodes by etching a material layer for the wiring electrodes while etchingwise removing a photoresist for masking the material layer for the wiring electrodes.