Abstract: Imaging-system bookbinding apparatus avoids cutting any folded sheets mixed into booklets it trims. Furnished with: an imaging unit; a sheet-folding unit that folds imaging-unit sheets; a stacking unit that stacks sheets from the sheet-folding or image-forming units; a cover-sheet binding unit that encases stacking-unit sheet bundles with, and binds them into, cover sheets; a trimming unit that trims true the bundle fore-edge; and a fold-position computing unit that determines where a sheet is pleated by the sheet-folding unit. The sheet-folding unit has a sheet conveyance path along which folded sheets are transported elsewhere than the stacking unit, while the fold-position computing unit in a first control mode transports to the stacking unit sheets folded over by the sheet-folding unit, and in a second control mode transports them from the sheet conveyance path elsewhere than the stacking unit.

Abstract: Imaging-system bookbinding apparatus avoids cutting any folded sheets mixed into booklets it trims. Furnished with: an imaging unit; a sheet-folding unit that folds imaging-unit sheets; a stacking unit that stacks sheets from the sheet-folding or image-forming units; a cover-sheet binding unit that encases stacking-unit sheet bundles with, and binds them into, cover sheets; a trimming unit that trims true the bundle fore-edge; and a fold-position computing unit that determines where a sheet is pleated by the sheet-folding unit. The sheet-folding unit has a sheet conveyance path along which folded sheets are transported elsewhere than the stacking unit, while the fold-position computing unit in a first control mode transports to the stacking unit sheets folded over by the sheet-folding unit, and in a second control mode transports them from the sheet conveyance path elsewhere than the stacking unit.

Abstract: A substrates treating apparatus comprising a chamber provided with a section at which a semiconductor wafer is treated and with another section at which plasma is generated. A supplier for supplying mixed gas (O.sub.2 +CF.sub.4) into the plasma generating section in the chamber, high frequency electrodes for changing the gas into plasma, an ion trap for trapping ions in the plasma to send neutral radicals into the wafer treating section, and an exhaust mechanism for exhausting the wafer treating section.

Abstract: A method and an apparatus, both for ashing unnecessary layers such as a photoresist layer, formed on a semiconductor wafer, by applying ozone to the layer, are disclosed. An ashing gas containing oxygen atom radical, or containing oxygen gas and an ashing-promoting gas, is applied to the layer, thereby ashing the layer readily and efficiently. The surface temperature of the layer is set at a prescribed value, and the ashing gas is applied uniformly onto the entire surface of the layer, or onto a part thereof, thus ashing the whole layer, or a part thereof, uniformly at a high rate, and the end-point of the ashing process is detected, thereby to enhance the efficiency of the ashing process.