Abstract: A heat absorbing element 20 of a thin-film Peltier type is thermally connected with a surface of a semiconductor element body portion 10 through a heat conducting layer 15 which is an electrical insulator. The heat absorbing element 20 is comprised of a substance having a bulk thermal conductivity of 50 W/mK or more and a Seebeck coefficient of 300 ?V/K or more.

Abstract: There have been demands for transparent electrode materials and magnetic materials, each having a wide range of applications. In view of the situations, a novel functional device and a method for forming an oxide material are provided. A functional device includes an AlxGayInzN layer (wherein 0?x?1, 0?y?1, and 0?z?1) and an oxide material layer composed of a metal oxide and formed on the AlxGayInzN layer. The metal oxide may be TiO2. The present invention provides a functional device that includes a group III nitride layer having excellent physical and chemical properties and a film integrally formed thereon. The film reflects less light at the interface and has chemical resistance and high durability.

Abstract: With regard to a substrate for a transparent electrode and transparent conductive thin film each having transparency and conductivity, a transparent metal material and transparent electrode are provided which are capable of being stably supplied and are composed of raw materials with superior chemical resistance. When a metal oxide layer (12) composed of an anatase type crystal structure is provided on a substrate (11) to constitute the metal oxide layer (12) by M:TiO2, low resistivity is achieved while internal transmittance is maintained. M:TiO2 obtained by substituting other atoms (Nb, Ta, Mo, As, Sb, or W) for Ti of the anatase type TiO2 enable maintenance of transparency and remarkably improvement of electric conductivity.

Abstract: There have been demands for transparent electrode materials and magnetic materials, each having a wide range of applications. In view of the situations, a novel functional device and a method for forming an oxide material are provided. A functional device includes an AlxGayInzN layer (wherein 0?x?1, 0?y?1, and 0?z?1) and an oxide material layer composed of a metal oxide and formed on the AlxGayInzN layer. The metal oxide may be TiO2. The present invention provides a functional device that includes a group III nitride layer having excellent physical and chemical properties and a film integrally formed thereon. The film reflects less light at the interface and has chemical resistance and high durability.

Abstract: With regard to a substrate for a transparent electrode and transparent conductive thin film each having transparency and conductivity, a transparent metal material and transparent electrode are provided which are capable of being stably supplied and are composed of raw materials with superior chemical resistance. When a metal oxide layer (12) composed of an anatase type crystal structure is provided on a substrate (11) to constitute the metal oxide layer (12) by M:TiO2, low resistivity is achieved while internal transmittance is maintained. M:TiO2 obtained by substituting other atoms (Nb, Ta, Mo, As, Sb, or W) for Ti of the anatase type TiO2 enable maintenance of transparency and remarkably improvement of electric conductivity.