Abstract: A method is used for forming a low relative permittivity dielectric film by a vacuum ultraviolet CVD. The film is a silicon organic film (e.g., SiOCH, SiC, SiCH, and SiOF films) that has a controlled relative permittivity and is formed at temperatures below 350° C. The method can control the content of carbon in the film to achieve a desired relative permittivity. A desired relative permittivity can be achieved by: {circle around (1)} controlling the type and flow rate of added gas (O2, N2O) that contains oxygen atoms; {circle around (2)} controlling the flow rate of TEOS; {circle around (3)} controlling the intensity of light emitted from the excimer lamp; {circle around (4)} elevating the temperatures of the synthetic quartz window and the gas flowing in the vacuum chamber, and controlling the distance between the synthetic quartz window and the wafer; and {circle around (5)} controlling the temperature of the wafer.

Abstract: A method of manufacturing an interlayer dielectric film by vacuum ultraviolet CVD including the steps of placing a wafer in a vacuum chamber having a window; causing a first gas that contains silicon atoms to flow through the vacuum chamber; exposing the wafer to light emitted from a Xe2 excimer lamp through the window; and maintaining an atmosphere in the chamber at a first temperature which is less than 350° C. to form an insulating film on the wafer which substantially fills stepped portions of the wafer to provide step coverage and which has a substantially flat top surface.

Abstract: A method is used for forming an SIOCH film on a wafer by a vacuum ultraviolet CVD. The film has a flat top surface and a good step coverage effect. The wafer is placed in TEOS and is exposed to ultraviolet. The chamber is maintained below 350° C. Oxygen may be added to TEOS. After formation of the film, the temperature of the chamber is elevated, oxygen may be stopped and then the film is further processed in TEOS alone, or the film in the chamber is exposed to vacuum ultraviolet.

Abstract: A method is used for forming a low relative permittivity dielectric film by a vacuum ultraviolet CVD. The film is a silicon organic film (e.g., SiOCH, SiC, SiCH, and SiOF films) that has a controlled relative permittivity and is formed at temperatures below 350° C. The method can control the content of carbon in the film to achieve a desired relative permittivity. A desired relative permittivity can be achieved by: {circle over (1)} controlling the type and flow rate of added gas (O2, N2O) that contains oxygen atoms; {circle over (2)} controlling the flow rate of TEOS; {circle over (3)} controlling the intensity of light emitted from the excimer lamp; {circle over (4)} elevating the temperatures of the synthetic quartz window and the gas flowing in the vacuum chamber, and controlling the distance between the synthetic quartz window and the wafer; and {circle over (5)} controlling the temperature of the wafer.