Abstract: An ICP emission spectrophotometer includes an inductively coupled plasma device, a spectroscope, and a computer. The spectroscope includes an incidence window, an incidence side slit, a diffraction grating, an emission window, an emission side slit, and a detector. Measurement conditions including diffraction condition and a measurement result are displayed on a display device. In a case where there are a plurality of diffraction conditions each including a combination of a diffraction grating and a diffraction order for measuring desired diffracted light, comparison information including at least an intensity and a resolution of emitted light in the diffraction condition is displayed on the display device. A measurer selects diffraction conditions in which resolution is higher from among the diffraction conditions, and selects a diffraction condition in which an intensity is obtained from among the selected diffraction conditions.

Abstract: An ICP emission spectrophotometer includes an inductively coupled plasma device, a spectroscope, and a computer. The spectroscope includes an incidence window, an incidence side slit, a diffraction grating, an emission window, an emission side slit, and a detector. Measurement conditions including diffraction condition and a measurement result are displayed on a display device. In a case where there are a plurality of diffraction conditions each including a combination of a diffraction grating and a diffraction order for measuring desired diffracted light, comparison information including at least an intensity and a resolution of emitted light in the diffraction condition is displayed on the display device. A measurer selects diffraction conditions in which resolution is higher from among the diffraction conditions, and selects a diffraction condition in which an intensity is obtained from among the selected diffraction conditions.

Abstract: An inductively coupled plasma generating device is configured to include a plasma torch, a high frequency induction coil and a high frequency power source. In addition, a heat transfer member, in which a first terminal is connected to the high frequency induction coil and a second terminal is connected to a cooling block, is disposed in the inductively coupled plasma generating device. The second terminal of the heat transfer member is located above the first terminal, thereby causing condensed operating fluid to fall and move toward the first terminal due to the action of gravity. Accordingly, it is possible to achieve excellent cooling capacity by improving circulation and mobility of the operating fluid.

Abstract: A sequential inductively coupled plasma (ICP) optical emission spectrometer includes a controller that operates to perform a series of process based on a shift amount (time dependency) of a wavelength peak position according to time elapse of a reference wavelength obtained as a result of continuously measuring a plurality of emission lines of argon having different wavelengths as the reference wavelength and a per-wavelength shift amount (wavelength dependency) of the reference wavelength, the process including: calculating a shift amount of a wavelength peak position of each measurement wavelength from a standard sample measurement time to an unknown sample measurement time; and performing measurement wavelength correction for correcting the movement position of the diffracting grating corresponding to the wavelength peak position of the measurement wavelength relative to the initial position.

Abstract: An inductively coupled plasma generating device is configured to include a plasma torch, a high frequency induction coil and a high frequency power source. In addition, a heat transfer member, in which a first terminal is connected to the high frequency induction coil and a second terminal is connected to a cooling block, is disposed in the inductively coupled plasma generating device. The second terminal of the heat transfer member is located above the first terminal, thereby causing condensed operating fluid to fall and move toward the first terminal due to the action of gravity. Accordingly, it is possible to achieve excellent cooling capacity by improving circulation and mobility of the operating fluid.

Abstract: An energy dispersive X-ray analyzer is attached to a scanning electron microscope and includes: a SEM controller; a detector; an EDS controller; and a data processor. The data processor generates first and second X-ray mapping image respectively when the SEM controller controls the scanning electron microscope to irradiate the sample with an electron beam under first and second acceleration voltage conditions. The data processor corrects the first X-ray mapping image and the second X-ray mapping image into images that are independent of acceleration voltage condition based on a measurement intensity variation ratio of the X-ray when changed from the first acceleration voltage condition to the second acceleration voltage condition, and controls the display unit to display a difference image between the corrected first X-ray mapping image and the corrected second X-ray mapping image.

Abstract: An ICP optical emission spectrometer including: an inductively coupled plasma device configured to atomize or ionize target element to be analyzed using inductively coupled plasma to obtain an atomic emission line; a light condenser configured to condense the atomic emission line, the light condenser including at least two independent light condensers including a first light condenser and a second light condenser; a spectroscope configured to receive the atomic emission line through an incident window and to spectrally detect the atomic emission line; and at least one incident slit that is provided between the first light condenser and the second light condenser, the incident slit being configured to allow the atomic emission line, which passed through the first light condenser, pass through the incident slit and reach to the second light condenser.

Abstract: An energy dispersive X-ray analyzer is attached to a scanning electron microscope and includes: a SEM controller; a detector; an EDS controller; and a data processor. The data processor generates first and second X-ray mapping image respectively when the SEM controller controls the scanning electron microscope to irradiate the sample with an electron beam under first and second acceleration voltage conditions. The data processor corrects the first X-ray mapping image and the second X-ray mapping image into images that are independent of acceleration voltage condition based on a measurement intensity variation ratio of the X-ray when changed from the first acceleration voltage condition to the second acceleration voltage condition, and controls the display unit to display a difference image between the corrected first X-ray mapping image and the corrected second X-ray mapping image.

Abstract: The X-ray fluorescence analyzer (100) includes: an enclosure (10); a door (20) for putting the sample into and out of the enclosure; a height measurement mechanism (7) capable of measuring a height at the irradiation point; a moving mechanism control unit (9) for adjusting a distance between the sample and the radiation source as well as the X-ray detector based on the measured height at the irradiation point; a laser unit (7) for irradiating the irradiation point with a visible light laser beam; a laser start control unit (9) for irradiating the visible light laser beam by the laser unit (7) when the door is open state; and a height measurement mechanism start control unit (9) for starting the height measurement mechanism to measure the height at the irradiation point when the door is opened.

Abstract: The X-ray fluorescence analyzer (100) includes: an enclosure (10); a door (20) for putting the sample into and out of the enclosure; a height measurement mechanism (7) capable of measuring a height at the irradiation point; a moving mechanism control unit (9) for adjusting a distance between the sample and the radiation source as well as the X-ray detector based on the measured height at the irradiation point; a laser unit (7) for irradiating the irradiation point with a visible light laser beam; a laser start control unit (9) for irradiating the visible light laser beam by the laser unit (7) when the door is open state; and a height measurement mechanism start control unit (9) for starting the height measurement mechanism to measure the height at the irradiation point when the door is opened.

Abstract: An apparatus is provided that precisely conduct ion beam etching to a sample having the properties of which easily change by electron beam irradiation with no loss of ease of operation and throughput. An apparatus includes an ion beam lens barrel and an electron beam lens barrel, which can observe or measure the conditions of a sample with an electron beam in the process of etching with an ion beam, wherein first, an observation image is obtained that includes the entire process area formed by secondary signals generated by an electron beam, secondly, an irradiation permit area and an irradiation inhibit area are defined in the observation image, and thirdly, electron beam irradiation is restricted only to the irradiation permit area.

Abstract: Provided are an X-ray tube and an X-ray analysis apparatus, which can be further reduced in size as well as in weight and more efficiently detect a fluorescent X-ray and the like to increase sensitivity.

Abstract: A vacuumed enclosure has a window formed of an X-ray transmissive material. The vacuumed enclosure encloses an electron beam source for generating an electron beam and a target which, irradiated by the electron beam, generates a primary X-ray. The target is smaller in the outer dimension than the window and located on the center of the window such that it irradiates, through the window, the primary X-ray onto a sample located outside. The vacuumed enclosure further encloses an X-ray detector located such that it can detect a fluorescent X-ray and a scattered X-ray coming from the sample through the window. The X-ray detector generates a signal representative of energy information of the fluorescent X-ray and the scattered X-ray. The vacuumed enclosure further encloses a thermally and electrically conductive metal extending through the target across the widow.

Abstract: There is constructed a constitution of including a mark image taking step of taking a reference mark image by subjecting a region other than an observation object section to EB scanning, a drift amount calculating step of calculating a current SEM drift amount with regard to a predetermined time point by comparing the taken reference mark image with a reference mark reference image, and an offset amount calculating step of calculating an offset amount of a current observation object section with regard to the predetermined time point prior to a section image taking step and taking a section image by correcting an EB scanning region at the predetermined time point based on the SEM drift amount and the offset amount at the section image taking step.

Abstract: Techniques for specifying an observing or working position of a sample are provided. Digitized data of a sample is obtained and stored in a 1st storage device. A 1st display area displays an image of a portion containing a desired observing or working position of the digitized data stored in the 1st storage device. A 1st position that is indicated by a pointing device on the 1st display area is stored in a 2nd storage device. The sample is moved to an observing or working position for observation, and an observation image of the sample is stored in the 3rd storage device. A 2nd display area displays the observation image of the sample stored in the 3rd storage device. A position indicated on the 2nd display area and corresponding to the 1st position stored in the 2nd storage device is stored in a 4th storage device.

Abstract: An apparatus is provided that precisely conduct ion beam etching to a sample having the properties of which easily change by electron beam irradiation with no loss of ease of operation and throughput. An apparatus includes an ion beam lens barrel and an electron beam lens barrel, which can observe or measure the conditions of a sample with an electron beam in the process of etching with an ion beam, wherein first, an observation image is obtained that includes the entire process area formed by secondary signals generated by an electron beam, secondly, an irradiation permit area and an irradiation inhibit area are defined in the observation image, and thirdly, electron beam irradiation is restricted only to the irradiation permit area.

Abstract: There are provided a detecting step of detecting secondary charged particles generated from an observation area of a sample when an electron beam or a focused ion beam is emitted onto the observation area under a certain irradiation condition; an image forming step of forming a plurality of observation images acquired by dividing the observation area and having an equal periodic pattern, from the secondary charged particles detected in the detecting step; and a defect recognizing step of recognizing a defect in the observation area from information on a difference acquired by comparing the plurality of observation images formed in the image forming step. Additionally, the detecting step, the image forming step, and the defect recognizing step are performed even when the electron beam or the focused ion beam is emitted onto the observation area under an irradiation condition different from the certain irradiation condition.

Abstract: Detected is a secondary electron generated by irradiating a focused ion beam while performing etching a sample section and the around through scan-irradiating the focused ion beam. From a changing amount of the detected secondary electron signal an end-point detecting mechanism detects an end point to thereby terminate the etching, so that a center position of a defect or a contact hole is effectively detected even with an FIB apparatus not having a SEM observation function.

Abstract: In a method of measuring a thin film sample of irradiating an electron beam to a thin film sample, detecting a generated secondary electron and measuring a film thickness of the thin film sample by utilizing the secondary electron, it is provided that the film thickness is measured accurately, in a short period of time and easily even when a current amount of the irradiated electron beam is varied. An electron beam 2b is irradiated, and a generated secondary electron 4 is detected by a secondary electron detector 6. A calculated value constituted by an amount of a secondary electron detected at a film thickness measuring region and an amount of a secondary electron detected at a reference region is calculated by first calculating means 11. A film thickness of the film thickness measuring region can be calculated from a calibration data of a standard thin film sample and the calculated value calculated by a sample 5.

Abstract: Provided are an X-ray tube and an X-ray analysis apparatus, which can be further reduced in size as well as in weight and more efficiently detect a fluorescent X-ray and the like to increase sensitivity.