Patents by Inventor Yutaka Ishiwata
Yutaka Ishiwata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9025721Abstract: There is provided a holding device which can hold a molten corium for a predetermined period even when the molten corium is exposed to heat or undergoes any chemical reaction and which is applicable to practical use. There is provided a holding device provided below a nuclear reactor pressure vessel for holding a molten corium, wherein the holding device includes a base material in contact with a cooling medium, and a multilayer stack structure on the base material. The multilayer stack structure has a first layer having heat-resistant property, a second layer formed on the first layer and having heat-resistant property with lower heat conductivity than that of the first layer, and a third layer formed on the second layer and having corrosion-resistant property and impact-absorbing property.Type: GrantFiled: September 14, 2012Date of Patent: May 5, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Kunihiko Wada, Fumiyo Kuno, Yutaka Ishiwata, Tsuneji Kameda, Ryoichi Hamazaki, Noriyuki Katagiri
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Patent number: 8890347Abstract: A wind power generation system 10 of an embodiment includes a rotor 40 having a hub 41 and blades 42, a nacelle 31 pivotally supporting the rotor 40, a tower 30 supporting the nacelle 31, an airflow generation device 60 provided in a leading edge of each of the blades 42 and having a first electrode 61 and a second electrode 62 which are separated via a dielectric, and a discharge power supply 65 capable of applying a voltage between the electrodes of the airflow generation device 60. Further, the system includes a measurement device detecting information related to at least one of output in the wind power generation system 10, torque in the rotor 40 and a rotation speed of the blades 42, and a control unit 110 controlling the discharge power supply 65 based on an output from the measurement device.Type: GrantFiled: May 2, 2012Date of Patent: November 18, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Motofumi Tanaka, Hisashi Matsuda, Kunihiko Wada, Hiroyuki Yasui, Shohei Goshima, Naohiko Shimura, Yutaka Ishiwata, Susumu Kinoshita, Tamon Ozaki, Sueyoshi Mizuno, Shinichi Noda, Toshiki Osako, Toshimasa Yamada
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Patent number: 8674537Abstract: A wind power generation system 10 of an embodiment includes a rotor 40 having blades 42, an airflow generation device 60 provided in a leading edge of each of the blades 42 and having a first electrode 61 and a second electrode 62 which are separated via a dielectric, a discharge power supply 65 applying a voltage between the electrodes of the airflow generation device 60, and a control unit 110 controlling the discharge power supply 65. The control unit 110 controls the voltage to perform pulse modulation so that the value of a relational expression fC/U is 0.1 or larger and 9 or smaller where f is a pulse modulation frequency of the voltage, C is a chord length of the blades 42, and U is a relative velocity combining a peripheral velocity of the blades 42 and a wind velocity, so as to generate plasma induced flow.Type: GrantFiled: March 13, 2012Date of Patent: March 18, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Motofumi Tanaka, Hisashi Matsuda, Kunihiko Wada, Hiroyuki Yasui, Shohei Goshima, Naohiko Shimura, Yutaka Ishiwata, Susumu Kinoshita, Tamon Ozaki, Sueyoshi Mizuno, Shinichi Noda
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Patent number: 8559158Abstract: In one embodiment, an air current generating apparatus includes: a dielectric substrate exposed to gas: a first electrode disposed inside the dielectric substrate; a second electrode disposed near a surface of the dielectric so as to correspond the first electrode and having a sharp shape; and a power source applying a voltage between the first and second electrodes and plasmatizing part of the gas to generate an air current.Type: GrantFiled: February 1, 2013Date of Patent: October 15, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Motofumi Tanaka, Kazuo Hayashi, Naohiko Shimura, Hiroyuki Yasui, Masahiro Asayama, Yutaka Ishiwata, Masahiro Katayama
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Publication number: 20130070886Abstract: There is provided a holding device which can hold a molten corium for a predetermined period even when the molten corium is exposed to heat or undergoes any chemical reaction and which is applicable to practical use. There is provided a holding device provided below a nuclear reactor pressure vessel for holding a molten corium, wherein the holding device includes a base material in contact with a cooling medium, and a multilayer stack structure on the base material. The multilayer stack structure has a first layer having heat-resistant property, a second layer formed on the first layer and having heat-resistant property with lower heat conductivity than that of the first layer, and a third layer formed on the second layer and having corrosion-resistant property and impact-absorbing property.Type: ApplicationFiled: September 14, 2012Publication date: March 21, 2013Inventors: Kunihiko WADA, Fumiyo Kuno, Yutaka Ishiwata, Tsuneji Kameda, Ryoichi Hamazaki, Noriyuki Katagiri
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Patent number: 8400751Abstract: In one embodiment, an air current generating apparatus includes: a dielectric substrate exposed to gas: a first electrode disposed inside the dielectric substrate; a second electrode disposed near a surface of the dielectric so as to correspond the first electrode and having a sharp shape; and a power source applying a voltage between the first and second electrodes and plasmatizing part of the gas to generate an air current.Type: GrantFiled: January 14, 2011Date of Patent: March 19, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Motofumi Tanaka, Kazuo Hayashi, Naohiko Shimura, Hiroyuki Yasui, Masahiro Asayama, Yutaka Ishiwata, Masahiro Katayama
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Patent number: 8393861Abstract: In one embodiment, a steam device includes a high-temperature member and a low-temperature member. One surface of the high-temperature member is exposed to high-temperature steam, and the other surface is cooled by cooling steam having a temperature lower than the high-temperature steam. The low-temperature member is disposed to face the high-temperature member with a passage for the cooling steam therebetween and is formed of a material having a heat resistance lower than that of the high-temperature member.Type: GrantFiled: May 26, 2011Date of Patent: March 12, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Kunihiko Wada, Katsuya Yamashita, Yutaka Ishiwata, Yuujiro Nakatani, Takeo Suga, Asako Inomata, Kazuhiro Saito, Takao Inukai, Yusuke Suzuki, Shogo Iwai
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Publication number: 20120280501Abstract: A wind power generation system 10 of an embodiment includes a rotor 40 having a hub 41 and blades 42, a nacelle 31 pivotally supporting the rotor 40, a tower 30 supporting the nacelle 31, an airflow generation device 60 provided in a leading edge of each of the blades 42 and having a first electrode 61 and a second electrode 62 which are separated via a dielectric, and a discharge power supply 65 capable of applying a voltage between the electrodes of the airflow generation device 60. Further, the system includes a measurement device detecting information related to at least one of output in the wind power generation system 10, torque in the rotor 40 and a rotation speed of the blades 42, and a control unit 110 controlling the discharge power supply 65 based on an output from the measurement device.Type: ApplicationFiled: May 2, 2012Publication date: November 8, 2012Inventors: Motofumi Tanaka, Hisashi Matsuda, Kunihiko Wada, Hiroyuki Yasui, Shohei Goshima, Naohiko Shimura, Yutaka Ishiwata, Susumu Kinoshita, Tamon Ozaki, Sueyoshi Mizuno, Shinichi Noda, Toshiki Osako, Toshimasa Yamada
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Publication number: 20120280500Abstract: A wind power generation system 10 of an embodiment includes a rotor 40 having blades 42, an airflow generation device 60 provided in a leading edge of each of the blades 42 and having a first electrode 61 and a second electrode 62 which are separated via a dielectric, a discharge power supply 65 applying a voltage between the electrodes of the airflow generation device 60, and a control unit 110 controlling the discharge power supply 65. The control unit 110 controls the voltage to perform pulse modulation so that the value of a relational expression fC/U is 0.1 or larger and 9 or smaller where f is a pulse modulation frequency of the voltage, C is a chord length of the blades 42, and U is a relative velocity combining a peripheral velocity of the blades 42 and a wind velocity, so as to generate plasma induced flow.Type: ApplicationFiled: March 13, 2012Publication date: November 8, 2012Inventors: Motofumi TANAKA, Hisashi Matsuda, Kunihiko Wada, Hiroyuki Yasui, Shohei Goshima, Naohiko Shimura, Yutaka Ishiwata, Susumu Kinoshita, Tamon Ozaki, Sueyoshi Mizuno, Shinichi Noda
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Publication number: 20110280717Abstract: In one embodiment, a steam device includes a high-temperature member and a low-temperature member. One surface of the high-temperature member is exposed to high-temperature steam, and the other surface is cooled by cooling steam having a temperature lower than the high-temperature steam. The low-temperature member is disposed to face the high-temperature member with a passage for the cooling steam therebetween and is formed of a material having a heat resistance lower than that of the high-temperature member.Type: ApplicationFiled: May 26, 2011Publication date: November 17, 2011Inventors: Kunihiko WADA, Katsuya Yamashita, Yutaka Ishiwata, Yuujiro Nakatani, Takeo Suga, Asako Inomata, Kazuhiro Saito, Takao Inukai, Yusuke Suzuki, Shogo Iwai
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Publication number: 20110198312Abstract: In one embodiment, an air current generating apparatus includes: a dielectric substrate exposed to gas: a first electrode disposed inside the dielectric substrate; a second electrode disposed near a surface of the dielectric so as to correspond the first electrode and having a sharp shape; and a power source applying a voltage between the first and second electrodes and plasmatizing part of the gas to generate an air current.Type: ApplicationFiled: January 14, 2011Publication date: August 18, 2011Applicant: Kabushiki Kaisha ToshibaInventors: Motofumi TANAKA, Kazuo Hayashi, Naohiko Shimura, Hiroyuki Yasui, Masahiro Asayama, Yutaka Ishiwata, Masahiro Katayama
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Publication number: 20090308848Abstract: A soft alloy layer forming apparatus (10) includes a base metal support part (20) rotationally supporting a base metal (40) with a center axis (42) of an inner periphery of the base metal (40) being a rotation axis, and an arc generating unit (30) movable in a direction of the rotation axis of the inner periphery of the base metal (40), fixed at a predetermined distance from the inner peripheral face (41) of the base metal (40), and generating an arc (31) between itself and the base metal (40). While rotating the base metal (40) and maintaining the distance constant between the arc generating unit (30) and the inner peripheral face (41) of the base metal (40), a soft alloy member (50) is melted by the arc generating unit (30) to form a soft alloy layer (15) on the inner peripheral face (41) of the base metal (40).Type: ApplicationFiled: May 26, 2009Publication date: December 17, 2009Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yutaka ISHIWATA, Kazuo AOYAMA, Nobuaki ENDOU, Kiyotaka TANAKA, Hitoshi KATAYAMA
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Publication number: 20080199709Abstract: A ceramic-coated member is configured by laminating at least a thermal stress relieving layer 22 and a thermal barrier layer 23 in this order on a base material 20 of metal or ceramic. A density of zirconium oxide forming the thermal stress relieving layer 22 decreases continuously and a density of hafnium oxide forming the thermal barrier layer 23 increases continuously from the thermal stress relieving layer 22 toward the thermal barrier layer 23 in a boundary portion 24 and its neighborhood between the thermal stress relieving layer 22 and the thermal barrier layer 23.Type: ApplicationFiled: February 20, 2008Publication date: August 21, 2008Inventors: Yutaka Ishiwata, Toshiaki Fuse, Kunihiko Wada
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Publication number: 20080199711Abstract: A heat resistant member includes a metal or ceramic substrate and a thermal-barrier coating layer disposed on the substrate. The thermal-barrier coating layer includes a metal layer functioning as a bonding layer and one or more ceramic layers disposed on the metal layer. At least one of the ceramic layers is mainly composed of a hafnium oxide-based ceramic layer containing 85% or more of hafnium oxide. Due to the above structure, there can be provided a heat resistant member with high heat resistance and durability which has a thermal-barrier coating layer with stable thermal conductivity at elevated temperatures, namely, not less than 1,200° C., and resistance to cracking and delamination due to sintering.Type: ApplicationFiled: February 14, 2008Publication date: August 21, 2008Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yutaka ISHIWATA, Kazuhide Matsumoto, Yoshiyasu Ito
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Patent number: 7263766Abstract: An insulating substrate (1) has insulative ceramic layers (2, 3) laid one upon another, an intermediate layer (4) made of a material that is different from a material of the ceramic layers and arranged between adjacent ones of the ceramic layers to join the adjacent ceramic layers to each other, a first conductive layer (5) joined to the top surface of a top one of the ceramic layers, and a second conductive layer (6) joined to the bottom surface of a bottom one of the ceramic layers. Even if any one of the ceramic layers has strength lower than design strength and causes a breakage due to, for example, thermal stress, the remaining ceramic layers are sound to secure a specified breakdown voltage for the insulating substrate.Type: GrantFiled: January 27, 2003Date of Patent: September 4, 2007Assignee: Kabushiki Kaisha ToshibaInventors: Yutaka Ishiwata, Kosoku Nagata, Toshio Shimizu, Hiroyuki Hiramoto, Yasuhiko Taniguchi, Kouji Araki, Hiroshi Fukuyoshi, Hiroshi Komorita
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Patent number: 6673308Abstract: A nickel-base single-crystal superalloy, essentially consists of, in percentages by weight, 4.0% to 11.0% of cobalt, 3.5% to less than 5.0% of chromium, 0.5% to 3.0% of molybdenum, 7.0% to 10.0% of tungsten, 4.5% to 6.0% of aluminum, 0.1% to 2.0% of titanium, 5.0% to 8.0% of tantalum, 1.0% to 3.0% of rhenium, 0.01% to 0.5% of hafnium, 0.01% to 0.1% of silicon, and a balance being nickel and inevitable impurity, a total amount of rhenium and chromium being not less than 4.0% and a total amount of rhenium, molybdenum, tungsten and chromium being not more than 18.0%.Type: GrantFiled: August 30, 2001Date of Patent: January 6, 2004Assignees: Kabushiki Kaisha Toshiba, Independent Administrative Institution National Institute for Material ScienceInventors: Takehisa Hino, Yutaka Koizumi, Toshiharu Kobayashi, Shizuo Nakazawa, Hiroshi Harada, Yutaka Ishiwata, Yomei Yoshioka
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Publication number: 20030168729Abstract: An insulating substrate (1) has insulative ceramic layers (2, 3) laid one upon another, an intermediate layer (4) made of a material that is different from a material of the ceramic layers and arranged between adjacent ones of the ceramic layers to join the adjacent ceramic layers to each other, a first conductive layer (5) joined to the top surface of a top one of the ceramic layers, and a second conductive layer (6) joined to the bottom surface of a bottom one of the ceramic layers. Even if any one of the ceramic layers has strength lower than design strength and causes a breakage due to, for example, thermal stress, the remaining ceramic layers are sound to secure a specified breakdown voltage for the insulating substrate.Type: ApplicationFiled: January 27, 2003Publication date: September 11, 2003Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yutaka Ishiwata, Kosoku Nagata, Toshio Shimizu, Hiroyuki Hiramoto, Yasuhiko Taniguchi, Kouji Araki, Hiroshi Fukuyoshi, Hiroshi Komorita
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Patent number: 6605868Abstract: An insulating substrate (1) has insulative ceramic layers (2, 3) laid one upon another, an intermediate layer (4) made of a material that is different from a material of the ceramic layers and arranged between adjacent ones of the ceramic layers to join the adjacent ceramic layers to each other, a first conductive layer (5) joined to the top surface of a top one of the ceramic layers, and a second conductive layer (6) joined to the bottom surface of a bottom one of the ceramic layers. Even if any one of the ceramic layers has strength lower than design strength and causes a breakage due to, for example, thermal stress, the remaining ceramic layers are sound to secure a specified breakdown voltage for the insulating substrate.Type: GrantFiled: December 9, 1999Date of Patent: August 12, 2003Assignee: Kabushiki Kaisha ToshibaInventors: Yutaka Ishiwata, Kosoku Nagata, Toshio Shimizu, Hiroyuki Hiramoto, Yasuhiko Taniguchi, Kouji Araki, Hiroshi Fukuyoshi, Hiroshi Komorita
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Publication number: 20020066953Abstract: An insulating substrate (1) has insulative ceramic layers (2, 3) laid one upon another, an intermediate layer (4) made of a material that is different from a material of the ceramic layers and arranged between adjacent ones of the ceramic layers to join the adjacent ceramic layers to each other, a first conductive layer (5) joined to the top surface of a top one of the ceramic layers, and a second conductive layer (6) joined to the bottom surface of a bottom one of the ceramic layers. Even if any one of the ceramic layers has strength lower than design strength and causes a breakage due to, for example, thermal stress, the remaining ceramic layers are sound to secure a specified breakdown voltage for the insulating substrate.Type: ApplicationFiled: December 9, 1999Publication date: June 6, 2002Inventors: YUTAKA ISHIWATA, KOSOKU NAGATA, TOSHIO SHIMIZU, HIROYUKI HIRAMOTO, YASUHIKO TANIGUCHI, KOUJI ARAKI, HIROSHI FUKUYOSHI, HIROSHI KOMORITA
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Publication number: 20020062886Abstract: A nickel-base single-crystal superalloy, essentially consists of, in percentages by weight, 4.0% to 11.0% of cobalt, 3.5% to less than 5.0% of chromium, 0.5% to 3.0% of molybdenum, 7.0% to 10.0% of tungsten, 4.5% to 6.0% of aluminum, 0.1% to 2.0% of titanium, 5.0% to 8.0% of tantalum, 1.0% to 3.0% of rhenium, 0.01% to 0.5% of hafnium, 0.01% to 0.1% of silicon, and a balance being nickel and inevitable impurity, a total amount of rhenium and chromium being not less than 4.0% and a total amount of rhenium, molybdenum, tungsten and chromium being not more than 18.0%.Type: ApplicationFiled: August 30, 2001Publication date: May 30, 2002Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Takehisa Hino, Yutaka Koizumi, Toshiharu Kobayashi, Shizuo Nakazawa, Hiroshi Harada, Yutaka Ishiwata, Yomei Yoshioka