Abstract: A method of manufacturing a solar cell including a crystalline semiconductor substrate, includes: etching or washing at least part of a first principal surface of the substrate by treatment with an aqueous alkaline solution; and depositing a p-type semiconductor layer containing boron on at least part of a second principal surface of the substrate before the treatment with the aqueous alkaline solution.

Abstract: There is provided a method of producing a photovoltaic element comprising: a first step in which an i-type amorphous silicon layer (16) and an n-type amorphous silicon layer (14) are formed over a light-receiving surface of an n-type monocrystalline silicon substrate (18); a second step in which an i-type amorphous silicon layer (22a) and an n-type amorphous silicon layer (23a) are formed over a back surface of the n-type monocrystalline silicon substrate (18); and a third step in which, after the first step and the second step are completed, protection layers are formed over the n-type amorphous silicon layer (14) and the n-type amorphous silicon layer (23a).

Abstract: Disclosed is a solar cell that comprises a substrate made of a semiconductor material, a first amorphous semiconductor layer placed on one region of the substrate and being of one conductivity type, a second amorphous semiconductor layer placed on another region of the substrate and being of another conductivity type, a substantially intrinsic i-type amorphous semiconductor layer provided above the first amorphous semiconductor layer, a third amorphous semiconductor layer provided on the i-type amorphous semiconductor layer and being of the other conductivity type, a first crystalline semiconductor layer placed between the first amorphous semiconductor layer and the i-type amorphous semiconductor layer and being of the one conductivity type, and a second crystalline semiconductor layer placed between the first crystalline semiconductor layer and the i-type amorphous semiconductor layer and being of the other conductivity type.

Abstract: The method disclosed herein includes a first step of forming an i-type amorphous silicon layer 16 and an n-type amorphous silicon layer 14 on a light-receiving surface of an n-type monocrystalline silicon substrate 18; a second step of forming an i-type amorphous silicon layer 22a and an n-type amorphous silicon layer 23a on a backside surface of the n-type monocrystalline silicon substrate 18; and a third step of forming, after completion of the first step and the second step, an antireflection layer 12 on the n-type amorphous silicon layer 14, and subsequently forming an insulating layer 24a on the n-type amorphous silicon layer 23a.

Abstract: Disclosed is a solar cell that comprises a substrate made of a semiconductor material, a first amorphous semiconductor layer placed on one region of the substrate and being of one conductivity type, a second amorphous semiconductor layer placed on another region of the substrate and being of another conductivity type, a substantially intrinsic i-type amorphous semiconductor layer provided above the first amorphous semiconductor layer, a third amorphous semiconductor layer provided on the i-type amorphous semiconductor layer and being of the other conductivity type, a first crystalline semiconductor layer placed between the first amorphous semiconductor layer and the i-type amorphous semiconductor layer and being of the one conductivity type, and a second crystalline semiconductor layer placed between the first crystalline semiconductor layer and the i-type amorphous semiconductor layer and being of the other conductivity type.

Abstract: Disclosed is a solar cell that comprises a substrate made of a semiconductor material, a first amorphous semiconductor layer placed on one region of the substrate and being of one conductivity type, a substantially intrinsic i-type amorphous semiconductor layer provided to extend from another region of the substrate over onto the first amorphous semiconductor layer, a second amorphous semiconductor layer provided on the i-type amorphous semiconductor layer and being of another conductivity type, a first crystalline semiconductor layer placed between the first amorphous semiconductor layer and the i-type amorphous semiconductor layer and being of the one conductivity type, a second crystalline semiconductor layer placed between the first crystalline semiconductor layer and the i-type amorphous semiconductor layer and being of the other conductivity type, and a third amorphous semiconductor layer placed between the second crystalline semiconductor layer and the i-type amorphous semiconductor layer and being of

Abstract: The method disclosed herein includes a first step of forming an i-type amorphous silicon layer 16 and an n-type amorphous silicon layer 14 on a light-receiving surface of an n-type monocrystalline silicon substrate 18; a second step of forming an i-type amorphous silicon layer 22a and an n-type amorphous silicon layer 23a on a backside surface of the n-type monocrystalline silicon substrate 18; and a third step of forming, after completion of the first step and the second step, an antireflection layer 12 on the n-type amorphous silicon layer 14, and subsequently forming an insulating layer 24a on the n-type amorphous silicon layer 23a.

Abstract: A photovoltaic device (10) is provided with: an n-type monocrystalline silicon substrate (21); an IN layer (25) layered over one surface of the n-type monocrystalline silicon substrate (21); an IP layer (26) layered over a region, of one surface of the IN layer 25, where the IN layer (25) is not layered, and layered so as to have an overlap region (26*) which is overlapped with the region where the IN layer (25) is layered; an n-side electrode (40) electrically connected to the IN layer (25) and formed over the overlap region (26*); and a p-side electrode (50) formed distanced from the n-side electrode (40) and electrically connected to the IP layer (26). In the IP layer (26), a separation gap (60) is formed between a region where the n-side electrode (40) is formed and a region where the p-side electrode (50) is formed.

Abstract: There is provided a method of producing a photovoltaic element comprising: a first step in which an i-type amorphous silicon layer (16) and an n-type amorphous silicon layer (14) are formed over a light-receiving surface of an n-type monocrystalline silicon substrate (18); a second step in which an i-type amorphous silicon layer (22a) and an n-type amorphous silicon layer (23a) are formed over a back surface of the n-type monocrystalline silicon substrate (18); and a third step in which, after the first step and the second step are completed, protection layers are formed over the n-type amorphous silicon layer (14) and the n-type amorphous silicon layer (23a).