Patents by Inventor Yutaka Kishida

Yutaka Kishida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20030172864
    Abstract: In the manufacture of a silicon single crystal by the Czochralski method, there is provided a seed crystal for use in the production of the silicon single crystal. This seed crystal is capable of preventing creation of a dislocation occurring during the immersion of the seed crystal in the molten silicon and withstanding the load of a silicon single crystal of great weight as well. There is also a method for the production of the seed crystal and a method for the production of a silicon single crystal which enables the ratio of elimination of dislocation to be increased.
    Type: Application
    Filed: December 11, 2002
    Publication date: September 18, 2003
    Applicant: WACKER SILTRONIC AG
    Inventors: Masahiro Tanaka, Yutaka Kishida, Teruyuki Tamaki, Hideo Kato, Seiki Takebayashi
  • Publication number: 20030089301
    Abstract: A single crystal production method based on the Czochralski method comprises controlling a number of crucible rotations and crystal rotations so that a number of vibrations for driving a melt, determined on the basis of the number of crucible and crystal rotations during a single crystal growing procedure, is outside a range from 95% to 105% of a number of sloshing resonance vibrations of the melt. In another embodiment, the method comprises controlling a number of rotations of a crystal and crucible, so that when a number of vibrations for driving a melt, determined by the number of crucible and crystal rotations during a single crystal growing procedure, is within a range from 95% to 105% of a number of sloshing resonance vibrations of the melt, the number of vibrations of the melt due to sloshing does not exceed 2000 times during a period when the number of vibrations is within that range.
    Type: Application
    Filed: October 30, 2002
    Publication date: May 15, 2003
    Applicant: Wacker Siltronic AG
    Inventors: Yutaka Kishida, Teruyuki Tamaki, Seiki Takebayashi, Wataru Ohashi
  • Patent number: 6200384
    Abstract: In the growth of a large silicon single crystal weighing not less than 100 kg by the Czokralski method resorting to application of a magnetic field, a crucible, not less than 0.7 m in inside diameter is used, and a cusped magnetic field which manifests a maximum intensity of not more than 1000 gausses on the inner wall of the crucible is applied.
    Type: Grant
    Filed: July 27, 1999
    Date of Patent: March 13, 2001
    Assignee: Nippon Steel Corporation
    Inventors: Yutaka Kishida, Wataru Ohashi, Teruyuki Tamaki, Seiki Takebayashi
  • Patent number: 5728583
    Abstract: A method and apparatus for determining an abnormal component of blood functions is described. A whole blood sample is cycled as a laminar flow through a flow cell having a measuring element prepared by plating the surface of a plate-shaped quartz oscillator with a protein layer. The amount of adhesion of the blood component on the protein layer is determined on the basis of the change in resonance frequency of the measuring element. The measured value is compared with a standard value of adhesion for blood from a healthy individual.
    Type: Grant
    Filed: December 4, 1996
    Date of Patent: March 17, 1998
    Assignee: Jeol, Ltd.
    Inventors: Keiko Kawakami, Yoshiyuki Harada, Tadashi Sakon, Yutaka Kishida, Yasuo Ikeda