Abstract: A technique that enables production of pellicle membranes that are better resistant to breakage when subjected to force exerted thereon in the thickness direction thereof and that have high transmittance to light. A pellicle membrane of the present invention includes a plurality of laminated layers, where at least one of the layers is provided with at least one hole having a width or diameter of 10 nm to 500 nm.

Abstract: A technique that can achieve a pellicle film made of carbon nanotubes and having high in-plane transmittance uniformity. The pellicle film contains a plurality of first carbon nanotubes extending in a first direction and arrayed in the radial direction, and a plurality of second carbon nanotubes extending in a second direction intersecting the first direction, and arrayed in their radial direction.

Abstract: A reflective exposure mask blank and a reflective exposure mask are provided, and the mask enables accurate exposure and transcription without having light being reflected from areas other than a circuit pattern area. The reflective mask blank has, on a substrate (11), a multilayer reflective film (12), a protective film (13), an absorption film (14), and a reverse-surface conductive film (15). A reverse-surface conductive film is formed from indium tin oxide. The substrate contains SiO2, TiO2, and at least one oxide of manganese (Mn), copper (Cu), cobalt (Co), chromium (Cr), iron (Fe), silver (Ag), nickel (Ni), sulfur (S), selenium (Se), gold (Au), and neodymium (Nd). The reflective mask is manufactured by forming a circuit pattern by selectively stripping the absorption film on the reflective mask blank, and forming a light-shielding frame by stripping the multilayer reflective film, the protective film, and the absorption film around the circuit pattern.

Abstract: A reflective exposure mask blank and a reflective exposure mask are provided, and the mask enables accurate exposure and transcription without having light being reflected from areas other than a circuit pattern area. The reflective mask blank has, on a substrate (11), a multilayer reflective film (12), a protective film (13), an absorption film (14), and a reverse-surface conductive film (15). A reverse-surface conductive film is formed from indium tin oxide. The substrate contains SiO2, TiO2, and at least one oxide of manganese (Mn), copper (Cu), cobalt (Co), chromium (Cr), iron (Fe), silver (Ag), nickel (Ni), sulfur (S), selenium (Se), gold (Au), and neodymium (Nd). The reflective mask is manufactured by forming a circuit pattern by selectively stripping the absorption film on the reflective mask blank, and forming a light-shielding frame by stripping the multilayer reflective film, the protective film, and the absorption film around the circuit pattern.