Abstract: An anti-reflection film is produced on the panel surface of a cathode-ray tube by:(A) preparing a solution for forming an anti-reflection film, which contains water and a metal alkoxide having the formula,M(OR).sub.nwherein M is a metal selected from the group consisting of Si, Ti, Al, Zr, Sn, In, Sb and Zn; R is an alkyl group having 1-10 carbon atoms; n is an integer of from 1 to 8; and when n is not 1, the alkyl groups represented by R may be the same or different,(B) coating the solution for forming an anti-reflection film on the outermost surface of the panel of a cathode-ray tube, and(C) applying an ultraviolet light to the solution for forming an anti-reflection film coated on said surface to cure the solution to form a transparent film with fine roughness.

Abstract: An anti-reflection film is produced on the panel surface of a cathode-ray tube by:(A) preparing a solution for forming an anti-reflection film, which contains water and a metal alkoxide having the formula,M(OR).sub.nwherein M is a metal selected from the group consisting of Si, Ti, Al, Zr, Sn, In, Sb and Zn; R is an alkyl group having 1-10 carbon atoms; n is an integer of from 1 to 8; and when n is not 1, the alkyl groups represented by R may be the same or different,(B) coating the solution for forming an anti-reflection film on the outermost surface of the panel of a cathode-ray tube, and(C) applying an ultraviolet light to the solution for forming an anti-reflection film coated on said surface to cure the solution to form a transparent film with fine roughness.

Abstract: In a liquid chromatographic system for analyzing biological or vital components in blood, etc., a separation column packed with a packing material of organic porous material containing carboxyalkyl groups as functional groups and having pore diameter of 600 to 1,200 .ANG. in dry state and an ion exchange capacity of 0.1 to 0.5 meq/g on dry basis is used to improve the chromatographic performance of the separation column, 5-component and 6-component analysis are carried out by switching separation columns of different column length or diameter, and judgement of column life is made by evaluation parameters.

Abstract: A specimen cartridge fashioned of a good thermal conductor, with an outer frame being fashioned of heat insulating material, and with a connecting rod being fashioned of a poor thermal conductor. A temperature distribution of the specimen is uniform and a temperature drift is reduced, with a thermal expansion of a specimen cartridge tilting rod not affecting the tilting angle, thereby making it possible to perform various highly accurate observations and measurements with an electron microscope.

Abstract: An analytical electron microscope automatically identifies objects in a sample on the basis of shape of the object, change of thickness of the object and/or change of element (such as change of element type or concentration). Therefore, the operator of the analytical electron microscope can specify a desired object, and an example or examples of that object in a sample can be identified automatically. The characteristics need to identify the object are determined by detecting the effect of the sample on the electron beam of the analytical electron microscope, using, for example, an energy dispersive type X-ray analyzer and an electron energy loss spectrometer. Once an example of the object has been identified, it may be analyzed further. The analytical electron microscope may also analyze a sample to identify and classify the objects present.

Abstract: In separation column 23 is packed a filler consisting of an inorganic or organic porous substance having carboxyalkyl group and dihydroxyboronyl group. Thus, the separation column 23 can concurrently perform the procedure of separating glycohemoglobin, hemoglobin and hemoglobin derivatives in blood and the procedure of decomposing labile-type hemoglobin in blood into glucose and hemoglobin to remove the labile-type hemoglobin, when a diluted blood sample on sample table 19 along with eluents 8 to 10 is transferred to the separation column 23. Then, stable-type hemoglobin in the eluate from the separation column 23 is measured by UV-VIS detector 25.

Abstract: Stable hemoglobin A.sub.lc (s-A.sub.lc) can be separated from other hemoglobin components and quantitated in a short time by means of a liquid-chromatographic apparatus comprising a separation column packed with a packing material consisting essentially of a porous substance having a carboxyalkyl group combined thereinto, as ion exchanger, a means for injecting a sample into the separation column, a means for passing one or more eluents through the separation column, and a means for detecting hemoglobin, hemoglobin derivatives or glycosylated hemoglobin, the average particle size of the packing material in dry state being 4 .mu.m or less.

Abstract: Technology for using a wiring of a superconductive material in semiconductor integrated circuit device. An isolation layer and/or a barrier layer are provided for preventing diffusion of harmful composition of the superconductive material for the semiconductor device. Control of a circuit can be made utilizing the characteristics of a superconductive material. Also, the characteristics of a superconductive material may be controlled. A method of forming a layer of superconductive material, well compatible with the widely used process of manufacturing integrated circuit devices, is also disclosed.

Abstract: A process for controlling an oxygen content of a non-superconductive or superconductive oxide is provided, in which a beam of particles such as ions, electrons or neutrons or an electromagnetic radiation is applied to the non-superconductive or superconductive oxide of a perovskite type such as YBa.sub.2 Cu.sub.3 O.sub.7-x, thereby increasing or reducing the oxygen content of the oxide at the sites of oxygen in the crystal lattice of the oxide. Furthermore, a superconductive device such as a superconductive magnet, superconductive power transmission wire, superconductive transformer, superconductive shield, permanent current switch and electronic element is made by utilizing the process for controlling the oxygen concentration of the superconductive oxide.

Abstract: A laminar structure comprising an organic material and an inorganic material; for example, a coating structure on an organic substrate comprising an organic material on which an inorganic film must be formed and a method of producing the structure, a structure which is suitable for increasing the reliability of an optical disk and a method of producing this, a wiring structure on an organic substrate comprising the organic material on which electric wiring must be formed and a method of producing this, and a structure suitable for increasing the reliability of a semiconductor integrated circuit device and a method of producing this.

Abstract: A thin film transistor formed on an insulating sulstrate is disclosed in which metal silicide layers are formed in a thin film made of a monocrystalline, polycrystalline, or amorphous semiconductor material, to be used as source and drain regions, and further a gate electrode includes a metal silicide layer.

Abstract: A semiconductor LSI device formed in a semiconductor substrate comprising source/ drain regions of a MOSFET, polycrystalline silicon conductor to be connected to the source/drain region, and a silicide layer interposed between the source/drain region and the polycrystalline silicon conductor. Silicide intrudes into silicon bulk through an oxide film on the silicon substrate surface, assuring contact of low resistance, while lateral resistance of the source/drain region formed in the semiconductor substrate is also reduced. Reduction of contact/connection resistances is accomplished in a high density LSI which is thus imparted with an improved high-speed performance.

Abstract: A semiconductor device has a structure in which two semiconductor substrates are coupled to each other through a semiconductor oxide film and a metal silicide film, and a semiconductor element, for example, a bi-polar transistor is formed in the semiconductor substrate on the metal silicide film side, whereby a metal silicide layer having a high melting point is provided beneath one region of the bi-polar transistor for example, an n.sup.+ buried collector layer and in ohmic contact with the n.sup.+ buried collector layer. An electrical isolation between the adjacent semiconductor elements is made by an insulating layer.

Abstract: A method of fabricating a semiconductor device includes the steps of: forming at least one first semiconductor region of a first conductivity type and at least one second semiconductor region of a second conductivity type in a main surface of a semiconductor layer of the first conductivity type; forming a three-layer film having a desired shape on each of the first and second semiconductor regions, the three-layer film being made up of a bottom layer which is a conductive film, an intermediate layer which is a silicon nitride film, and a top layer which is a polycrystalline silicon film doped with one of arsenic and phosphorus; forming a first insulating layer on the side wall of the three-layer film; forming a second polycrystalline silicon film on the whole surface, and diffusing one of arsenic and phosphorus from the first polycrystalline silicon film into the second polycrystalline silicon film; selectively etching off the first polycrystalline silicon film and that portion of the second polycrystalline s

Abstract: A process for manufacturing resin-molded semiconductor devices which are sealed in an epoxy resin is carried out without employing a metal mold. In the process, an epoxy resin is deposited on a sub-assembly consisting of a semiconductor pellet brazed to axial leads while turning the sub-assembly with the axial leads as a center so that the epoxy resin is applied to a predetermined shape; then the epoxy resin is heated at an elevated temperature while turning the sub-assembly so that surface portions of the epoxy resin are hardened and the epoxy resin is further heated at an elevated temperature without turning the sub-assembly so that the epoxy resin is completely hardened.

Abstract: A semiconductor device is provided having a semiconductor substrate which has an annular moat formed in one major surface thereof and includes a pn junction terminating at an inner inclined side surface of the moat. In order to provide a high blocking voltage of the pn junction, the moat is filled or coated with glass material having a surface charge capable of inducing, in a semiconductor layer of one conductivity type in contact with the bottom of the moat, carriers having a polarity opposite to the above-mentioned conductivity type. An annular, highly-doped channel stopper region of the above-mentioned conductivity type is provided at the outside of the moat in a manner to be kept in contact with the moat, and the depth of the channel stopper region from the major surface is preferably made greater than the depth of the pn junction from the major surface.

Abstract: A semiconductor absolute pressure transducer assembly has a silicon diaphragm assembly and a covering member. The silicon diaphragm assembly has a circular pressure sensitive diaphragm, on the surface of which are diffused piezoresistors and conducting paths. The covering member composed of borosilicate glass has a circular well formed therein. On the surface of the silicon diaphragm assembly on which the piezoresistors and the conducting paths are diffused, a passivating layer of silicon dioxide is deposited. Further on the passivating layer, a conductive layer is formed by, for example, evaporating silicon. And the glass covering member is bonded on the silicon diaphragm assembly by anodic bonding. Namely, the silicon diaphragm assembly and the glass covering member are heated up to a certain high temperature and a relative high voltage applied across the conductive layer of the silicon diaphragm assembly and the glass covering members.

Abstract: A method of fabricating a semiconductor device of the type wherein aluminium layers are selectively deposited on the major surface of a silicon semiconductor substrate and thereafter aluminium is selectively diffused into the silicon semiconductor substrate by means of heat treatment in an atmosphere including an oxygen gas. Recesses are selectively formed in at least one major surface of the silicon semiconductor substrate, aluminium is deposited onto the recesses, and the silicon semiconductor substrate is then subjected to a heat treatment to selectively diffuse the aluminium into the silicon semiconductor substrate. Layers of oxide of silicon-aluminium alloy formed on the major surface subjected to the aluminium diffusion will not cause any damage of a photo-mask and at the same time accuracy in positioning the photo-mask may be improved. A failure to mount a semiconductor element onto a heat sink may also be prevented.

Abstract: A method of fabricating a semiconductor device through selective diffusion of aluminum vapor into a silicon substrate by heating a sealed tube in which the silicon substrate and an aluminum source are disposed. The diffusion is effected with a low concentration of aluminum smaller than about 10.sup.17 atoms/cm.sup.3, thereby making it possible to use a silicon oxide film as a diffusion mask for the selective diffusion of aluminum at predetermined region of the silicon substrate.

Abstract: An aluminum diffusion source layer is formed by vacuum evaporation on a major surface of a silicon substrate. The silicon substrate is heated to form an aluminum-silicon alloy layer, an aluminum doped silicon recrystallization layer and an aluminum diffusion layer. Thereafter, the aluminum-silicon alloy layer is removed from the major surface of the silicon substrate. Drive-in diffusion is performed so as to diffuse, aluminum included in the silicon recrystallization layer and the aluminum diffusion layer, into the silicon substrate. As a result, the aluminum diffusion concentration of 10.sup.16 -10.sup.19 atoms/cm.sup.3 can be obtained.