Abstract: A Johnsen-Rahbek force type electrostatic chuck including: a metal substrate; an electrode for electrostatic attraction provided on the metal substrate with an insulating layer interposed between the metal substrate and the electrode for electrostatic attraction; and a dielectric layer constituting an electrostatic attraction surface in contact with a workpiece. The dielectric layer includes a ceramic spray coating and a sealing component with which pores of the ceramic spray coating are filled, and the sealing component contains a metal organic salt containing a rare earth element.

Abstract: A Johnsen-Rahbek force type electrostatic chuck including: a metal substrate; an electrode for electrostatic attraction provided on the metal substrate with an insulating layer interposed between the metal substrate and the electrode for electrostatic attraction; and a dielectric layer constituting an electrostatic attraction surface in contact with a workpiece. The dielectric layer includes a ceramic spray coating and a sealing component with which pores of the ceramic spray coating are filled, and the sealing component contains a metal organic salt containing a rare earth element.

Abstract: In a plasma processing apparatus including a processing room disposed in a vacuum vessel, a sample stage located in the processing room, a dielectric film disposed on the top surface of the sample stage and serving as the sample mounting surface of the sample stage, and a plurality of electrodes embedded in the dielectric film for chucking the sample to the dielectric film when supplied with electric power, a part of the sample is chucked by supplying electric power to at least one of the electrodes while the sample is mounted on the sample stage; the sample is heated up to a predetermined temperature; a larger part of the sample is chucked by supplying electric power to the other of the electrodes; and the processing of the sample using the plasma is initiated.

Abstract: In a plasma processing apparatus including a processing room disposed in a vacuum vessel, a sample stage located in the processing room, a dielectric film disposed on the top surface of the sample stage and serving as the sample mounting surface of the sample stage, and a plurality of electrodes embedded in the dielectric film for chucking the sample to the dielectric film when supplied with electric power, a part of the sample is chucked by supplying electric power to at least one of the electrodes while the sample is mounted on the sample stage; the sample is heated up to a predetermined temperature; a larger part of the sample is chucked by supplying electric power to the other of the electrodes; and the processing of the sample using the plasma is initiated.

Abstract: In a plasma processing apparatus including a processing room disposed in a vacuum vessel, a sample stage located in the processing room, a dielectric film disposed on the top surface of the sample stage and serving as the sample mounting surface of the sample stage, and a plurality of electrodes embedded in the dielectric film for chucking the sample to the dielectric film when supplied with electric power, a part of the sample is chucked by supplying electric power to at least one of the electrodes while the sample is mounted on the sample stage; the sample is heated up to a predetermined temperature; a larger part of the sample is chucked by supplying electric power to the other of the electrodes; and the processing of the sample using the plasma is initiated.

Abstract: In a plasma processing apparatus including a processing room disposed in a vacuum vessel, a sample stage located in the processing room, a dielectric film disposed on the top surface of the sample stage and serving as the sample mounting surface of the sample stage, and a plurality of electrodes embedded in the dielectric film for chucking the sample to the dielectric film when supplied with electric power, a part of the sample is chucked by supplying electric power to at least one of the electrodes while the sample is mounted on the sample stage; the sample is heated up to a predetermined temperature; a larger part of the sample is chucked by supplying electric power to the other of the electrodes; and the processing of the sample using the plasma is initiated.

Abstract: A plasma processing apparatus includes a processing chamber to be depressurized and exhausted, a sample placement electrode provided in the processing chamber and having a sample placement surface on which a substrate to be processed is placed, an electromagnetic generation device to generate plasma in the processing chamber, a supply system that supplies processing gas to the processing chamber, a vacuum exhaust system that exhausts inside the processing chamber, a heater layer and a base temperature monitor that are disposed on the sample placement electrode, a wafer temperature estimating unit that estimates a wafer temperature from the base temperature monitor and plasma forming power supply, and a controller that regulates the heater corresponding to output from the temperature estimating unit.

Abstract: There is disclosed a plasma processing apparatus wherein a sample placed on the top surface of the sample table located within the processing chamber contained in a vacuum vessel is processed with plasma formed in the processing chamber, comprising a set of ducts cut within the sample table through which cooling medium flows; a film-shaped heater whose heating elements are concentrically embedded in the dielectric film serving as the top surface of the sample table; plural temperature controllers which set up the temperature of the cooling medium flowing through the ducts at different values, respectively; and a control unit which switches over the circulations through the ducts of the cooling medium supplied from the plural temperature controllers.

Abstract: It is possible to provide a plasma etching apparatus that controls the temperature of a sample at a higher speed and with more accuracy to improve the efficiency of processing the sample. A plasma processing apparatus includes a processing chamber to be depressurized and exhausted, a sample placement electrode provided in the processing chamber and having a sample placement surface on which a substrate to be processed is placed, an electromagnetic generation device to generate plasma in the processing chamber, a supply system that supplies processing gas to the processing chamber, a vacuum exhaust system that exhausts inside the processing chamber, a heater layer and a base temperature monitor that are disposed on the sample placement electrode, a wafer temperature estimating unit that estimates a wafer temperature from the base temperature monitor and plasma forming power supply, and a controller that regulates the heater corresponding to output from the temperature estimating unit.

Abstract: A temperature control type sample-holding electrode using a heater capable of enhancing the performance of controlling the electrode temperature and ensuring the uniformity of static adsorption force over the entire surface, the sample-holding electrode being provided in a processing chamber with a sample being disposed thereon, including a dielectric film having a sample-placing surface and a thin electrode film disposed so as to oppose to the sample-placing surface by way of the dielectric film and comprising a layer of a substantially identical height serving both as a static adsorption electrode and a heater electrode, and provided with power source device capable of simultaneously supplying an AC power for heater and DC power for static adsorption to the thin electrode film.

Abstract: A plasma processing apparatus has a processing chamber connected to an exhaust system so that the inside pressure can be reduced, a gas feeding unit for supplying gas to the processing chamber, a wafer, and a substrate electrode on which the wafer can be placed. The plasma processing apparatus also has an antenna electrode provided in opposition to the substrate electrode to generate plasma, a plasma generating high-frequency power supply connected to the antenna electrode, and a wafer biasing power supply connected to the substrate electrode. In addition, a coaxial line and a coaxial waveguide are optimized by using a coaxial model, and a voltage measuring circuit is mounted right under the coaxial line.

Abstract: In plasma processing equipment having a vacuum processing chamber, a plasma generation means, a stage for loading a wafer to be processed in the vacuum processing chamber, an opposing electrode having an area almost equal to or wider than the aforementioned wafer which is installed opposite to the stage, and a bias power source for applying a high frequency bias to the wafer, a current path correction means is provided for correcting the current path part in the neighborhood of the outer periphery of the wafer among the high frequency current paths produced by the high frequency bias so as to be directed toward the wafer opposing surface of the opposing electrode.

Abstract: In a plasma processing equipment having a vacuum processing chamber, a plasma generation means, a stage for loading a wafer to be processed in the vacuum processing chamber, an opposing electrode having an area almost equal to or wider than the aforementioned wafer which is installed opposite to the stage, and a bias power source for applying a high frequency bias to the wafer, a current path correction means for correcting the current path part in the neighborhood of the outer periphery of the wafer among the high frequency current path by the high frequency bias so as to look toward the wafer opposing surface of the opposing electrode is installed.

Abstract: Provided is a method of processing a sample by generating plasma by an electromagnetic wave, wherein a material containing carbon, such as silicon carbide (Sic), is disposed in a vacuum container serving as a discharge region. The inside of an etching chamber is cleaned by O.sub.2 cleaning treatment by using a sheet type dry etching apparatus, and after an inner wall temperature of the etching chamber is set and controlled, a sample is conveyed into the etching chamber, and a TiN cap layer, an Al--Cu alloy layer and a TiN barrier layer are plasma-etched in order by using BCl.sub.3 /Cl.sub.2 /CH.sub.4 /Ar gases with the pattern of a resist film as a mask.

Abstract: The present invention relates to a plasma treating method and apparatus therefor, wherein a plasma treating method is carried out in which an electric field is generated between the electrodes of parallel plate electrodes (anode and cathode), and a magnetic field starting from the anode side, toward the cathode side, the other of said parallel plate electrodes, and back to the anode side, is used. The magnetic field has relatively short lines of magnetic force where it orthogonally intersects the electric field, near the cathode, as compared to that of lines of magnetic force parallel to the electric field, so as to make a cycloidal motion of electrons restricted and to cause mainly a cyclotronic motion of electrons to occur in large quantities.

Abstract: The present invention relates to a plasma processor, and the plasma processor comprises a processing chamber, means to reduce a pressure in the processing chamber so as to evacuate the interior thereof, means to introduce a processing gas into the processing chamber, means to generate an electric field within the processing chamber, and means to establish a magnetic field orthogonal to the electric field, this means being rotatable relative to a surface to-be-processed of a sample which is processed in a plasma arising under the action of the electric field and the magnetic field, whereby a space required for the movement of the means to establish the magnetic field orthogonal to the electric field can be reduced to miniaturize the processor, and the uniform processing of the sample can be attained using rotatable plasma.