Patents by Inventor Yutaka Ooka
Yutaka Ooka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240055451Abstract: The height of a solid-state imaging element is further reduced as compared to the related art. A solid-state imaging element that is a wafer-level chip size package, including: an optical sensor chip; a protective layer that is stacked on a light receiving surface of the optical sensor chip; and a rewiring layer that is stacked on a surface opposite to the light receiving surface of the optical sensor chip, in which a connection terminal of the rewiring layer is a copper flat pad without a solder ball, an alloy layer of tin and copper is not formed on a front surface of the flat pad, and a thermal expansion coefficient of the protective layer is substantially balanced with a thermal expansion coefficient of the rewiring layer.Type: ApplicationFiled: October 4, 2023Publication date: February 15, 2024Inventors: NAOTO SASAKI, YUTAKA OOKA
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Patent number: 11804502Abstract: The height of a solid-state imaging element is further reduced as compared to the related art. A solid-state imaging element that is a wafer-level chip size package, including: an optical sensor chip; a protective layer that is stacked on a light receiving surface of the optical sensor chip; and a rewiring layer that is stacked on a surface opposite to the light receiving surface of the optical sensor chip, in which a connection terminal of the rewiring layer is a copper flat pad without a solder ball, an alloy layer of tin and copper is not formed on a front surface of the flat pad, and a thermal expansion coefficient of the protective layer is substantially balanced with a thermal expansion coefficient of the rewiring layer.Type: GrantFiled: February 21, 2023Date of Patent: October 31, 2023Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Naoto Sasaki, Yutaka Ooka
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Publication number: 20230197745Abstract: The height of a solid-state imaging element is further reduced as compared to the related art. A solid-state imaging element that is a wafer-level chip size package, including: an optical sensor chip; a protective layer that is stacked on a light receiving surface of the optical sensor chip; and a rewiring layer that is stacked on a surface opposite to the light receiving surface of the optical sensor chip, in which a connection terminal of the rewiring layer is a copper flat pad without a solder ball, an alloy layer of tin and copper is not formed on a front surface of the flat pad, and a thermal expansion coefficient of the protective layer is substantially balanced with a thermal expansion coefficient of the rewiring layer.Type: ApplicationFiled: February 21, 2023Publication date: June 22, 2023Inventors: NAOTO SASAKI, YUTAKA OOKA
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Publication number: 20230178575Abstract: Provided is a semiconductor device including: a multilayer substrate including an optical element; a light-transmitting plate provided on the substrate to cover the optical element; and a lens of an inorganic material provided between the substrate and the light-transmitting plate. A structure having a same strength as a strength per unit area of the lens is provided at a portion outside an effective photosensitive region where the optical element is formed, when the substrate is viewed in plan.Type: ApplicationFiled: January 31, 2023Publication date: June 8, 2023Applicant: SONY GROUP CORPORATIONInventors: Takaaki HIRANO, Shinji MIYAZAWA, Kensaku MAEDA, Yusuke MORIYA, Shunsuke FURUSE, Yutaka OOKA
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Publication number: 20230134510Abstract: There is provided a solid-state imaging device including a substrate having a surface over which a plurality of photodiodes are formed, and a protection film that is transparent, has a water-proofing property, and includes a side wall part vertical to the surface of the substrate and a ceiling part covering a region surrounded by the side wall part, the side wall part and the ceiling part surrounding a region where the plurality of photodiodes are arranged over the substrate.Type: ApplicationFiled: December 27, 2022Publication date: May 4, 2023Applicant: SONY GROUP CORPORATIONInventors: Shinji Miyazawa, Yutaka Ooka
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Patent number: 11619772Abstract: The present technology relates to a semiconductor chip and an electronic apparatus that can suppress degradation of optical characteristics of a semiconductor chip including an image pickup device. A semiconductor chip includes: an image pickup device; a transparent protective member that protects the image pickup device; an IR cut film arranged between a light-receiving surface of the image pickup device and the protective member; a bonding layer that bonds the IR cut film and the protective member together; and a protective film that covers side surfaces of the IR cut film and the bonding layer. The present technology can be applied to, for example, a semiconductor chip for an image pickup device.Type: GrantFiled: June 10, 2021Date of Patent: April 4, 2023Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Naoto Sasaki, Yutaka Ooka
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Patent number: 11616090Abstract: The height of a solid-state imaging element is further reduced as compared to the related art. A solid-state imaging element that is a wafer-level chip size package, including: an optical sensor chip; a protective layer that is stacked on a light receiving surface of the optical sensor chip; and a rewiring layer that is stacked on a surface opposite to the light receiving surface of the optical sensor chip, in which a connection terminal of the rewiring layer is a copper flat pad without a solder ball, an alloy layer of tin and copper is not formed on a front surface of the flat pad, and a thermal expansion coefficient of the protective layer is substantially balanced with a thermal expansion coefficient of the rewiring layer.Type: GrantFiled: May 11, 2021Date of Patent: March 28, 2023Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Naoto Sasaki, Yutaka Ooka
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Patent number: 11600648Abstract: Provided is a semiconductor device including: a multilayer substrate including an optical element; a light-transmitting plate provided on the substrate to cover the optical element; and a lens of an inorganic material provided between the substrate and the light-transmitting plate. A structure having a same strength as a strength per unit area of the lens is provided at a portion outside an effective photosensitive region where the optical element is formed, when the substrate is viewed in plan.Type: GrantFiled: May 7, 2021Date of Patent: March 7, 2023Assignee: SONY GROUP CORPORATIONInventors: Takaaki Hirano, Shinji Miyazawa, Kensaku Maeda, Yusuke Moriya, Shunsuke Furuse, Yutaka Ooka
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Patent number: 11594563Abstract: The present technology relates to techniques of preventing intrusion of moisture into a chip. Various illustrative embodiments include image sensors that include: a substrate; a plurality of layers stacked on the substrate; the plurality of layers including a photodiode layer having a plurality of photodiodes formed on a surface of the photodiode layer; the plurality of layers including at least one layer having a groove formed such that a portion of the at least one layer is excavated; and a transparent resin layer formed above the photodiode layer and formed in the groove. The present technology can be applied to, for example, an image sensor.Type: GrantFiled: January 8, 2021Date of Patent: February 28, 2023Assignee: SONY CORPORATIONInventors: Atsushi Yamamoto, Shinji Miyazawa, Yutaka Ooka, Kensaku Maeda, Yusuke Moriya, Naoki Ogawa, Nobutoshi Fujii, Shunsuke Furuse, Masaya Nagata, Yuichi Yamamoto
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Patent number: 11581346Abstract: There is provided a solid-state imaging device including a substrate having a surface over which a plurality of photodiodes are formed, and a protection film that is transparent, has a water-proofing property, and includes a side wall part vertical to the surface of the substrate and a ceiling part covering a region surrounded by the side wall part, the side wall part and the ceiling part surrounding a region where the plurality of photodiodes are arranged over the substrate.Type: GrantFiled: May 14, 2020Date of Patent: February 14, 2023Assignee: SONY CORPORATIONInventors: Shinji Miyazawa, Yutaka Ooka
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Patent number: 11557573Abstract: There is provided a semiconductor device including a first semiconductor base substrate, a second semiconductor base substrate that is bonded onto a first surface side of the first semiconductor base substrate, a through electrode that is formed to penetrate from a second surface side of the first semiconductor base substrate to a wiring layer on the second semiconductor base substrate, and an insulation layer that surrounds a circumference of the through electrode formed inside the first semiconductor base substrate.Type: GrantFiled: May 19, 2021Date of Patent: January 17, 2023Assignee: SONY GROUP CORPORATIONInventors: Satoru Wakiyama, Masaki Okamoto, Yutaka Ooka, Reijiroh Shohji, Yoshifumi Zaizen, Kazunori Nagahata, Masaki Haneda
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Publication number: 20220157873Abstract: A semiconductor device includes a first semiconductor substrate in which a pixel region where pixel portions performing photoelectric conversion are two-dimensionally arranged is formed and a second semiconductor substrate in which a logic circuit processing a pixel signal output from the pixel portion is formed, the first and second semiconductor substrates being laminated. A protective substrate protecting an on-chip lens is disposed on the on-chip lens in the pixel region of the first semiconductor substrate with a sealing resin interposed therebetween.Type: ApplicationFiled: February 2, 2022Publication date: May 19, 2022Applicant: SONY GROUP CORPORATIONInventors: Naoki KOMAI, Naoto SASAKI, Naoki OGAWA, Takashi OINOUE, Hayato IWAMOTO, Yutaka OOKA, Masaya NAGATA
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Publication number: 20220115427Abstract: Picture quality deterioration is curbed. A solid-state imaging device according to an embodiment includes: a semiconductor substrate (131) including a light-receiving element; an on-chip lens (132) disposed on a first surface of the semiconductor substrate; a resin layer (133) covering the on-chip lens; and a glass substrate (134) disposed on the side of the first surface of the semiconductor substrate separately from the resin layer.Type: ApplicationFiled: February 21, 2020Publication date: April 14, 2022Inventors: YUTAKA OOKA, TAIZO TAKACHI, YUICHI YAMAMOTO
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Publication number: 20210305300Abstract: The present technology relates to techniques of preventing intrusion of moisture into a chip. Various illustrative embodiments include image sensors that include: a substrate; a plurality of layers stacked on the substrate; the plurality of layers including a photodiode layer having a plurality of photodiodes formed on a surface of the photodiode layer; the plurality of layers including at least one layer having a groove formed such that a portion of the at least one layer is excavated; and a transparent resin layer formed above the photodiode layer and formed in the groove. The present technology can be applied to, for example, an image sensor.Type: ApplicationFiled: January 8, 2021Publication date: September 30, 2021Applicant: SONY CORPORATIONInventors: Atsushi YAMAMOTO, Shinji MIYAZAWA, Yutaka OOKA, Kensaku MAEDA, Yusuke MORIYA, Naoki OGAWA, Nobutoshi FUJII, Shunsuke FURUSE, Masaya NAGATA, Yuichi YAMAMOTO
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Publication number: 20210302634Abstract: The present technology relates to a semiconductor chip and an electronic apparatus that can suppress degradation of optical characteristics of a semiconductor chip including an image pickup device. A semiconductor chip includes: an image pickup device; a transparent protective member that protects the image pickup device; an IR cut film arranged between a light-receiving surface of the image pickup device and the protective member; a bonding layer that bonds the IR cut film and the protective member together; and a protective film that covers side surfaces of the IR cut film and the bonding layer. The present technology can be applied to, for example, a semiconductor chip for an image pickup device.Type: ApplicationFiled: June 10, 2021Publication date: September 30, 2021Inventors: NAOTO SASAKI, YUTAKA OOKA
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Publication number: 20210272933Abstract: There is provided a semiconductor device including a first semiconductor base substrate, a second semiconductor base substrate that is bonded onto a first surface side of the first semiconductor base substrate, a through electrode that is formed to penetrate from a second surface side of the first semiconductor base substrate to a wiring layer on the second semiconductor base substrate, and an insulation layer that surrounds a circumference of the through electrode formed inside the first semiconductor base substrate.Type: ApplicationFiled: May 19, 2021Publication date: September 2, 2021Applicant: Sony Group CorporationInventors: Satoru Wakiyama, Masaki Okamoto, Yutaka Ooka, Reijiroh Shohji, Yoshifumi Zaizen, Kazunori Nagahata, Masaki Haneda
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Publication number: 20210272995Abstract: An imaging element according to an embodiment of the present disclosure includes: a sensor substrate having a light-receiving region in which a plurality of light-receiving elements are arranged and a peripheral region provided around the light-receiving region; a sealing member disposed to be opposed to one surface of the sensor substrate; a resin layer that attaches the sensor substrate and the sealing member to each other; and an excavated part provided in the peripheral region of the one surface of the sensor substrate, and in which the resin layer is embedded, with the resin layer having one or a plurality of gaps inside the excavated part in a plan view.Type: ApplicationFiled: June 14, 2019Publication date: September 2, 2021Inventors: YOSHIAKI MASUDA, YUTAKA OOKA, SOTETSU SAITO, TAKAHIRO KAMEI, WATARU ISHII, NAOKI SATO, SHINICHI MATSUOKA, HIROKAZU YOSHIDA
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Publication number: 20210265404Abstract: The height of a solid-state imaging element is further reduced as compared to the related art. A solid-state imaging element that is a wafer-level chip size package, including: an optical sensor chip; a protective layer that is stacked on a light receiving surface of the optical sensor chip; and a rewiring layer that is stacked on a surface opposite to the light receiving surface of the optical sensor chip, in which a connection terminal of the rewiring layer is a copper flat pad without a solder ball, an alloy layer of tin and copper is not formed on a front surface of the flat pad, and a thermal expansion coefficient of the protective layer is substantially balanced with a thermal expansion coefficient of the rewiring layer.Type: ApplicationFiled: May 11, 2021Publication date: August 26, 2021Inventors: NAOTO SASAKI, YUTAKA OOKA
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Publication number: 20210265407Abstract: Provided is a semiconductor device including: a multilayer substrate including an optical element; a light-transmitting plate provided on the substrate to cover the optical element; and a lens of an inorganic material provided between the substrate and the light-transmitting plate. A structure having a same strength as a strength per unit area of the lens is provided at a portion outside an effective photosensitive region where the optical element is formed, when the substrate is viewed in plan.Type: ApplicationFiled: May 7, 2021Publication date: August 26, 2021Applicant: SONY GROUP CORPORATIONInventors: Takaaki HIRANO, Shinji MIYAZAWA, Kensaku MAEDA, Yusuke MORIYA, Shunsuke FURUSE, Yutaka OOKA
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Patent number: 11063020Abstract: There is provided a semiconductor device a method for manufacturing a semiconductor device, and an electronic apparatus that comprises a semiconductor device, the semiconductor device including a first chip, a second chip that is bonded onto a first surface side of the first chip, a through electrode that is formed to penetrate from a second surface side of the first chip to a wiring layer on the second semiconductor base substrate, and an insulation layer that is disposed between the through electrode and a semiconductor base substrate in the first chip.Type: GrantFiled: July 24, 2019Date of Patent: July 13, 2021Assignee: SONY CORPORATIONInventors: Satoru Wakiyama, Masaki Okamoto, Yutaka Ooka, Reijiroh Shohji, Yoshifumi Zaizen, Kazunori Nagahata, Masaki Haneda