Patents by Inventor Yutaka Ooka

Yutaka Ooka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210272995
    Abstract: An imaging element according to an embodiment of the present disclosure includes: a sensor substrate having a light-receiving region in which a plurality of light-receiving elements are arranged and a peripheral region provided around the light-receiving region; a sealing member disposed to be opposed to one surface of the sensor substrate; a resin layer that attaches the sensor substrate and the sealing member to each other; and an excavated part provided in the peripheral region of the one surface of the sensor substrate, and in which the resin layer is embedded, with the resin layer having one or a plurality of gaps inside the excavated part in a plan view.
    Type: Application
    Filed: June 14, 2019
    Publication date: September 2, 2021
    Inventors: YOSHIAKI MASUDA, YUTAKA OOKA, SOTETSU SAITO, TAKAHIRO KAMEI, WATARU ISHII, NAOKI SATO, SHINICHI MATSUOKA, HIROKAZU YOSHIDA
  • Publication number: 20210272933
    Abstract: There is provided a semiconductor device including a first semiconductor base substrate, a second semiconductor base substrate that is bonded onto a first surface side of the first semiconductor base substrate, a through electrode that is formed to penetrate from a second surface side of the first semiconductor base substrate to a wiring layer on the second semiconductor base substrate, and an insulation layer that surrounds a circumference of the through electrode formed inside the first semiconductor base substrate.
    Type: Application
    Filed: May 19, 2021
    Publication date: September 2, 2021
    Applicant: Sony Group Corporation
    Inventors: Satoru Wakiyama, Masaki Okamoto, Yutaka Ooka, Reijiroh Shohji, Yoshifumi Zaizen, Kazunori Nagahata, Masaki Haneda
  • Publication number: 20210265404
    Abstract: The height of a solid-state imaging element is further reduced as compared to the related art. A solid-state imaging element that is a wafer-level chip size package, including: an optical sensor chip; a protective layer that is stacked on a light receiving surface of the optical sensor chip; and a rewiring layer that is stacked on a surface opposite to the light receiving surface of the optical sensor chip, in which a connection terminal of the rewiring layer is a copper flat pad without a solder ball, an alloy layer of tin and copper is not formed on a front surface of the flat pad, and a thermal expansion coefficient of the protective layer is substantially balanced with a thermal expansion coefficient of the rewiring layer.
    Type: Application
    Filed: May 11, 2021
    Publication date: August 26, 2021
    Inventors: NAOTO SASAKI, YUTAKA OOKA
  • Publication number: 20210265407
    Abstract: Provided is a semiconductor device including: a multilayer substrate including an optical element; a light-transmitting plate provided on the substrate to cover the optical element; and a lens of an inorganic material provided between the substrate and the light-transmitting plate. A structure having a same strength as a strength per unit area of the lens is provided at a portion outside an effective photosensitive region where the optical element is formed, when the substrate is viewed in plan.
    Type: Application
    Filed: May 7, 2021
    Publication date: August 26, 2021
    Applicant: SONY GROUP CORPORATION
    Inventors: Takaaki HIRANO, Shinji MIYAZAWA, Kensaku MAEDA, Yusuke MORIYA, Shunsuke FURUSE, Yutaka OOKA
  • Patent number: 11063020
    Abstract: There is provided a semiconductor device a method for manufacturing a semiconductor device, and an electronic apparatus that comprises a semiconductor device, the semiconductor device including a first chip, a second chip that is bonded onto a first surface side of the first chip, a through electrode that is formed to penetrate from a second surface side of the first chip to a wiring layer on the second semiconductor base substrate, and an insulation layer that is disposed between the through electrode and a semiconductor base substrate in the first chip.
    Type: Grant
    Filed: July 24, 2019
    Date of Patent: July 13, 2021
    Assignee: SONY CORPORATION
    Inventors: Satoru Wakiyama, Masaki Okamoto, Yutaka Ooka, Reijiroh Shohji, Yoshifumi Zaizen, Kazunori Nagahata, Masaki Haneda
  • Patent number: 11048028
    Abstract: Provided is a semiconductor chip and an electronic apparatus that can suppress degradation of optical characteristics of a semiconductor chip including an image pickup device. The semiconductor chip includes an image pickup device, a transparent protective member that protects the image pickup device, an IR cut film arranged between a light-receiving surface of the image pickup device and the protective member, a bonding layer that bonds the IR cut film and the protective member together, and a protective film that covers side surfaces of the IR cut film and the bonding layer.
    Type: Grant
    Filed: November 21, 2016
    Date of Patent: June 29, 2021
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Naoto Sasaki, Yutaka Ooka
  • Patent number: 11037975
    Abstract: Provided is a semiconductor device including: a multilayer substrate including an optical element; a light-transmitting plate provided on the substrate to cover the optical element; and a lens of an inorganic material provided between the substrate and the light-transmitting plate. A structure having a same strength as a strength per unit area of the lens is provided at a portion outside an effective photosensitive region where the optical element is formed, when the substrate is viewed in plan.
    Type: Grant
    Filed: April 19, 2019
    Date of Patent: June 15, 2021
    Assignee: SONY CORPORATION
    Inventors: Takaaki Hirano, Shinji Miyazawa, Kensaku Maeda, Yusuke Moriya, Shunsuke Furuse, Yutaka Ooka
  • Patent number: 11031422
    Abstract: Provided is a solid-state imaging element that is a wafer-level chip size package, that includes an optical sensor chip, a protective layer that is stacked on a light receiving surface of the optical sensor chip, and a rewiring layer that is stacked on a surface opposite to the light receiving surface of the optical sensor chip, in which a connection terminal of the rewiring layer is a copper flat pad without a solder ball, an alloy layer of tin and copper is not formed on a front surface of the flat pad, and a thermal expansion coefficient of the protective layer is substantially balanced with a thermal expansion coefficient of the rewiring layer.
    Type: Grant
    Filed: August 4, 2017
    Date of Patent: June 8, 2021
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Naoto Sasaki, Yutaka Ooka
  • Patent number: 11024658
    Abstract: The present technology relates to techniques of preventing intrusion of moisture into a chip. Various illustrative embodiments include image sensors that include: a substrate; a plurality of layers stacked on the substrate; the plurality of layers including a photodiode layer having a plurality of photodiodes formed on a surface of the photodiode layer; the plurality of layers including at least one layer having a groove formed such that a portion of the at least one layer is excavated; and a transparent resin layer formed above the photodiode layer and formed in the groove. The present technology can be applied to, for example, an image sensor.
    Type: Grant
    Filed: March 2, 2020
    Date of Patent: June 1, 2021
    Assignee: SONY CORPORATION
    Inventors: Atsushi Yamamoto, Shinji Miyazawa, Yutaka Ooka, Kensaku Maeda, Yusuke Moriya, Naoki Ogawa, Nobutoshi Fujii, Shunsuke Furuse, Masaya Nagata, Yuichi Yamamoto
  • Publication number: 20200279883
    Abstract: There is provided a solid-state imaging device including a substrate having a surface over which a plurality of photodiodes are formed, and a protection film that is transparent, has a water-proofing property, and includes a side wall part vertical to the surface of the substrate and a ceiling part covering a region surrounded by the side wall part, the side wall part and the ceiling part surrounding a region where the plurality of photodiodes are arranged over the substrate.
    Type: Application
    Filed: May 14, 2020
    Publication date: September 3, 2020
    Applicant: SONY CORPORATION
    Inventors: Shinji Miyazawa, Yutaka Ooka
  • Publication number: 20200273897
    Abstract: The present technology relates to techniques of preventing intrusion of moisture into a chip. Various illustrative embodiments include image sensors that include: a substrate; a plurality of layers stacked on the substrate; the plurality of layers including a photodiode layer having a plurality of photodiodes formed on a surface of the photodiode layer; the plurality of layers including at least one layer having a groove formed such that a portion of the at least one layer is excavated; and a transparent resin layer formed above the photodiode layer and formed in the groove. The present technology can be applied to, for example, an image sensor.
    Type: Application
    Filed: March 2, 2020
    Publication date: August 27, 2020
    Applicant: SONY CORPORATION
    Inventors: Atsushi YAMAMOTO, Shinji MIYAZAWA, Yutaka OOKA, Kensaku MAEDA, Yusuke MORIYA, Naoki OGAWA, Nobutoshi FUJII, Shunsuke FURUSE, Masaya NAGATA, Yuichi YAMAMOTO
  • Patent number: 10756130
    Abstract: There is provided a solid-state imaging device including a substrate having a surface over which a plurality of photodiodes are formed, and a protection film that is transparent, has a water-proofing property, and includes a side wall part vertical to the surface of the substrate and a ceiling part covering a region surrounded by the side wall part, the side wall part and the ceiling part surrounding a region where the plurality of photodiodes are arranged over the substrate.
    Type: Grant
    Filed: March 5, 2018
    Date of Patent: August 25, 2020
    Assignee: Sony Corporation
    Inventors: Shinji Miyazawa, Yutaka Ooka
  • Patent number: 10608028
    Abstract: The present technology relates to techniques of preventing intrusion of moisture into a chip. Various illustrative embodiments include image sensors that include: a substrate; a plurality of layers stacked on the substrate; the plurality of layers including a photodiode layer having a plurality of photodiodes formed on a surface of the photodiode layer; the plurality of layers including at least one layer having a groove formed such that a portion of the at least one layer is excavated; and a transparent resin layer formed above the photodiode layer and formed in the groove. The present technology can be applied to, for example, an image sensor.
    Type: Grant
    Filed: July 26, 2018
    Date of Patent: March 31, 2020
    Assignee: SONY CORPORATION
    Inventors: Atsushi Yamamoto, Shinji Miyazawa, Yutaka Ooka, Kensaku Maeda, Yusuke Moriya, Naoki Ogawa, Nobutoshi Fujii, Shunsuke Furuse, Masaya Nagata, Yuichi Yamamoto
  • Publication number: 20190348398
    Abstract: There is provided a semiconductor device a method for manufacturing a semiconductor device, and an electronic apparatus that comprises a semiconductor device, the semiconductor device including a first chip, a second chip that is bonded onto a first surface side of the first chip, a through electrode that is formed to penetrate from a second surface side of the first chip to a wiring layer on the second semiconductor base substrate, and an insulation layer that is disposed between the through electrode and a semiconductor base substrate in the first chip.
    Type: Application
    Filed: July 24, 2019
    Publication date: November 14, 2019
    Applicant: Sony Corporation
    Inventors: Satoru Wakiyama, Masaki Okamoto, Yutaka Ooka, Reijiroh Shohji, Yoshifumi Zaizen, Kazunori Nagahata, Masaki Haneda
  • Publication number: 20190244996
    Abstract: Provided is a semiconductor device including: a multilayer substrate including an optical element; a light-transmitting plate provided on the substrate to cover the optical element; and a lens of an inorganic material provided between the substrate and the light-transmitting plate. A structure having a same strength as a strength per unit area of the lens is provided at a portion outside an effective photosensitive region where the optical element is formed, when the substrate is viewed in plan.
    Type: Application
    Filed: April 19, 2019
    Publication date: August 8, 2019
    Applicant: SONY CORPORATION
    Inventors: Takaaki HIRANO, Shinji MIYAZAWA, Kensaku MAEDA, Yusuke MORIYA, Shunsuke FURUSE, Yutaka OOKA
  • Patent number: 10373934
    Abstract: There is provided a semiconductor device and an electronic apparatus that comprises a semiconductor device, the semiconductor device including a first chip, a second chip that is bonded onto a first surface side of the first chip, a through electrode that is formed to penetrate from a second surface side of the first chip to a second wiring layer on the second semiconductor base substrate, and an insulation layer that is disposed between the through electrode and a semiconductor base substrate in the first chip.
    Type: Grant
    Filed: February 2, 2018
    Date of Patent: August 6, 2019
    Assignee: Sony Corporation
    Inventors: Satoru Wakiyama, Masaki Okamoto, Yutaka Ooka, Reijiroh Shohji, Yoshifumi Zaizen, Kazunori Nagahata, Masaki Haneda
  • Publication number: 20190214418
    Abstract: The height of a solid-state imaging element is further reduced as compared to the related art. A solid-state imaging element that is a wafer-level chip size package, including: an optical sensor chip; a protective layer that is stacked on a light receiving surface of the optical sensor chip; and a rewiring layer that is stacked on a surface opposite to the light receiving surface of the optical sensor chip, in which a connection terminal of the rewiring layer is a copper flat pad without a solder ball, an alloy layer of tin and copper is not formed on a front surface of the flat pad, and a thermal expansion coefficient of the protective layer is substantially balanced with a thermal expansion coefficient of the rewiring layer.
    Type: Application
    Filed: August 4, 2017
    Publication date: July 11, 2019
    Inventors: NAOTO SASAKI, YUTAKA OOKA
  • Patent number: 10332924
    Abstract: Provided is a semiconductor device including: a multilayer substrate including an optical element; a light-transmitting plate provided on the substrate to cover the optical element; and a lens of an inorganic material provided between the substrate and the light-transmitting plate. A structure having a same strength as a strength per unit area of the lens is provided at a portion outside an effective photosensitive region where the optical element is formed, when the substrate is viewed in plan.
    Type: Grant
    Filed: March 2, 2018
    Date of Patent: June 25, 2019
    Assignee: Sony Corporation
    Inventors: Takaaki Hirano, Shinji Miyazawa, Kensaku Maeda, Yusuke Moriya, Shunsuke Furuse, Yutaka Ooka
  • Patent number: 10236315
    Abstract: Provided is a solid-state image pickup element including: a sensor unit configured to generate an electrical signal in response to incident light; a color filter covering the sensor unit; and a lens configured to concentrate the incident light into the sensor unit via the color filter and formed by a laminated film made of a predetermined lens material. The lens is formed on the color filter without providing a planarization layer for removing a difference in level in the color filter.
    Type: Grant
    Filed: March 14, 2014
    Date of Patent: March 19, 2019
    Assignee: Sony Corporation
    Inventors: Yutaka Ooka, Shinji Miyazawa, Kensaku Maeda, Atsushi Yamamoto
  • Publication number: 20180348415
    Abstract: The present technology relates to a semiconductor chip and an electronic apparatus that can suppress degradation of optical characteristics of a semiconductor chip including an image pickup device. A semiconductor chip includes: an image pickup device; a transparent protective member that protects the image pickup device; an IR cut film arranged between a light-receiving surface of the image pickup device and the protective member; a bonding layer that bonds the IR cut film and the protective member together; and a protective film that covers side surfaces of the IR cut film and the bonding layer. The present technology can be applied to, for example, a semiconductor chip for an image pickup device.
    Type: Application
    Filed: November 21, 2016
    Publication date: December 6, 2018
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: NAOTO SASAKI, YUTAKA OOKA