Abstract: A first thin film including at least one transition metal selected from the group consisting of Co, Fe and Ni, and a second thin film including at least one platinum group element selected from the group consisting of Pt and Pd are prepared. Then, a multilayered structure where said first thin film and said second thin film are stacked is formed. Then, the multilayered structure is heated at the same time or after the formation of said multilayered structure, thereby to counter-diffuse constituent elements of said first thin film and said second thin film and alloy said at least one transition metal and said platinum. group element.

Abstract: A foreign-matter removal capacity is improved in a cleaning process. When a wafer is cleaned while a brush is moved from the center of the wafer toward the outer circumference thereof, a discharge flow rate of cleaning liquid flowing into the brush is regulated so that the interval between the brush and the wafer is kept constant.

Abstract: A magnetic substance having the maximum value of complex permeability in quasi-microwave range is provided for suppressing a high frequency noise in a small-sized (electronic apparatus. The magnetic substance is of a magnetic composition comprising M, X and Y, where M is a metallic magnetic material consisting of Fe, Co, and/or Ni, X being element or elements other than M and Y, and Y being F, N, and/or O. The M-X-Y magnetic composition has a concentration of M in the composition so that said M-X-Y magnetic composition has a saturation magnetization of 35-80% of that of the metallic bulk of magnetic material comprising M alone. The magnetic composition has the maximum &mgr;″max of complex.

Abstract: An optical pickup device for recording and/or reproducing the information on or from an optical disc.

Abstract: In a semiconductor bare chip (57) on the front surface whereof is formed an integrated circuit, a magnetic loss film 55 is formed on the back surface of that semiconductor bare chip.

Abstract: A lattice shaped underlayer made of a ferroelectric material having a piezoelectric effect is formed on a substrate. On the crossing points of the underlayer magnetic films with a magnetoelastic effect are formed. By applying a voltage to the given column and row of the underlayer, the underlayer is stressed at the crossing point. Then the stress is transmitted to the magnetic film on the same crossing point making the magnetization reverse through the magnetoelastic effect, thus, carrying out writing to the MRAM.

Abstract: The present invention aims to provide an excellent exchange coupling thin film consisting of a completely novel material other than FeMn or NiMn and having excellent corrosion resistance and high resistivity, and a magnetoresistive element and a magnetic head each of which include the exchange coupling thin film. The exchange coupling thin film includes an antiferromagnetic film mainly composed of a crystal phase of a body-centered cubic structure and containing Cr and element M where element M contains at least one element of the 3B group elements in the Periodic Table, or Al, Ga or In, and a ferromagnetic film containing at least one of Fe, Ne, and Co, both films being laminated in contact with each other, wherein magnetic exchange coupling is generated in the interface between the antiferromagnetic film and the ferromagnetic film.

Abstract: A bulk magnetoresistance effect material of a composition represented by the general formula: T.sub.100-A M.sub.A (wherein T is at least one element selected between Cu and Au; M is at least one element selected from the group consisting of Co, Fe, and Ni; and A is in the range: 1.ltoreq.A.ltoreq.50 by atomic percent) is prepared by casting a molten mixture of the above composition, and subjecting the resulting casting to homogenization and further to heat treatment. The bulk magnetoresistance effect material is high in the rate of change in the electrical resistance thereof, i.e., shows a large magnetoresistive effect and can be obtained in such bulk form in arbitrary shapes adaptable for various uses. Using the material, various types of magnetoresistive elements are obtained.

Abstract: A composite magnetic article for use as an electromagnetic interference suppressing body, which comprises soft magnetic powder of at least one soft magnetic composition having a magnetostriction constant, each of particles of the powder being flaky, and organic binding agent binding said soft magnetic powder dispersed therein. The soft magnetic powder is as annealed after being worked flaky. The flaky particles of the soft magnetic powder have an average thickness less than a skin depth within which the skin effect occurs at a frequency band for which said composite magnetic article is used, each having an oxide outer layers.

Abstract: In a drainage pump station, a driving machine has a capacity greater than a shaft power necessary for no-discharge operation of a pump, and during severe flooding the pump is operated at an overload exceeding its design capacity. During maintenance operation water is fed from a river on the delivery side of the pump station into the station. When an inflow of rainwater into the pump station is great the pump is operated at the necessary capacity, when it becomes small the water level is kept above a rated value, and when the inflow rate is zero the pump discharge is increased to a capacity at which sediment can be discharged. A suction blower is disposed at the top of a suction sump and interstage valves are disposed in entrances of vertical shafts to effect efficient ventilation of the underground waterway. A feed channel is operated as a pressure channel and the pump is of variable capacity and the water level in the underground waterway is controlled to be constant.

Abstract: A substrate processing apparatus comprising a process tube for enclosing a plurality of semiconductor wafers, injectors for introducing process gas into the process tube, a vacuum pump for exhausting the process tube, RF electrodes arranged along the outer circumference of the process tube and serving to generate high frequency electric field, when power is supplied, in a process-gas-introduced region so as to make process gas into plasmas, a high frequency power source for supplying power to the RF electrodes, heaters arranged in the process tube to directly heat the plural wafers, a power supply for supplying power to the heaters, and a controller for controlling the amount of power supplied from the power supply to the heaters.

Abstract: Disclosed is a soft magnetic film comprising a thin film of magnetic material of cubic symmetry, characterized in that crystal face (111) of the thin film is oriented substantially parallel to the surface of the thin film.

Abstract: In a plasma processing apparatus of this invention, a reaction chamber opposed to a plasma generating chmaber is entirely opened at its one side surface opposing the obect to be processed, and an interval between the one side surface and the other side surface is set to be an integer multiple of a 1/2 wavelength of the microwave. A microwave oscillated by a microwave oscillator and supplied to a vacuum vessel can be converted into a plasma energy with high conversion efficiency, thereby minimizing a reflected wave.

Abstract: A cobalt-base ternary alloy containing small amounts of hafnium and tantalum formed by sputtering, vapor deposition, etc., is used as the principal magnetic pole of a magnetic head for perpendicular magnetic recording, the core thin layers of a thin layer magnetic recording head, or the magnetic shield thin layers of a thin layer magnetic reproducing head. The ternary amorphous alloy has a high permeability and a high saturation magnetic flux density and hence the thickness of the foregoing layers composed of the alloy can be reduced as thin as possible.

Abstract: A perpendicular magnetic recording medium composed of a base material, a 1st magnetic thin layer formed on the base material, and a perpendicularly magnetizable 2nd magnetic thin layer formed on the 1st magnetic thin layer, wherein the 1st magnetic thin layer is composed of a Co-base ternary amorphous alloy containing small amounts of Hf and Ta.

Abstract: The present invention relates to an amorphous alloy to a soft magnetic material comprising an amorphous alloy layer, which material has such an excellent magnetic-stability that it does not undergo a secular change and which has a high magnetization and an extremely small magnetostriction.The soft magnetic material of the present invention comprises at least one amorphous magnetic alloy layer consisting of a composition expressed by (TM).sub.1-x (M.sub.I, M.sub.II).sub.x, wherein TM essentially consists of Co, M.sub.I is at least one element selected from the group consisting of Zr, Hf, and Y, M.sub.II is at least one metallic element selected from the group consisting of Nb, Ta, Mo, and W, x is from 0.05 to 0.2, and the ratio M.sub.II (M.sub.I and M.sub.II) is from 0.3 to 0.9.The method according to the present invention comprises a step of alternately depositing the amorphous magnetic alloy and an insulating material on a nonmagnetic base, thereby forming a multilayer laminate.

Abstract: A soft magnetic material having a low coercive force and a high permeability without reduction in saturation magnetic flux density is composed of a Co-base Co-Hf-Ta amorphous alloy containing 1 to 5 atoms % Hf and 4 to 10 atoms % Ta. The amorphous alloy is prepared by sputtering, etc.