Patents by Inventor Yutaka Shionoiri
Yutaka Shionoiri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240063797Abstract: An object is to provide a semiconductor device that can maintain the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units even after supply of power supply voltage is stopped. Another object is to provide a semiconductor device in which the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units can be changed at high speed. In a reconfigurable circuit, an oxide semiconductor is used for a semiconductor element that stores data on the circuit configuration, connection relation, or the like. Specifically, the oxide semiconductor is used for a channel formation region of the semiconductor element.Type: ApplicationFiled: August 31, 2023Publication date: February 22, 2024Inventors: Masashi FUJITA, Yutaka SHIONOIRI, Kiyoshi KATO, Hidetomo KOBAYASHI
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Patent number: 11750194Abstract: An object is to provide a semiconductor device that can maintain the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units even after supply of power supply voltage is stopped. Another object is to provide a semiconductor device in which the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units can be changed at high speed. In a reconfigurable circuit, an oxide semiconductor is used for a semiconductor element that stores data on the circuit configuration, connection relation, or the like. Specifically, the oxide semiconductor is used for a channel formation region of the semiconductor element.Type: GrantFiled: January 15, 2021Date of Patent: September 5, 2023Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masashi Fujita, Yutaka Shionoiri, Kiyoshi Kato, Hidetomo Kobayashi
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Publication number: 20220415893Abstract: It is an object to provide a memory device whose power consumption can be suppressed and a semiconductor device including the memory device. As a switching element for holding electric charge accumulated in a transistor which functions as a memory element, a transistor including an oxide semiconductor film as an active layer is provided for each memory cell in the memory device. The transistor which is used as a memory element has a first gate electrode, a second gate electrode, a semiconductor film located between the first gate electrode and the second gate electrode, a first insulating film located between the first gate electrode and the semiconductor film, a second insulating film located between the second gate electrode and the semiconductor film, and a source electrode and a drain electrode in contact with the semiconductor film.Type: ApplicationFiled: August 19, 2022Publication date: December 29, 2022Inventors: Yutaka SHIONOIRI, Hiroyuki MIYAKE, Kiyoshi KATO
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Patent number: 11424246Abstract: It is an object to provide a memory device whose power consumption can be suppressed and a semiconductor device including the memory device. As a switching element for holding electric charge accumulated in a transistor which functions as a memory element, a transistor including an oxide semiconductor film as an active layer is provided for each memory cell in the memory device. The transistor which is used as a memory element has a first gate electrode, a second gate electrode, a semiconductor film located between the first gate electrode and the second gate electrode, a first insulating film located between the first gate electrode and the semiconductor film, a second insulating film located between the second gate electrode and the semiconductor film, and a source electrode and a drain electrode in contact with the semiconductor film.Type: GrantFiled: October 2, 2020Date of Patent: August 23, 2022Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yutaka Shionoiri, Hiroyuki Miyake, Kiyoshi Kato
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Publication number: 20220122562Abstract: A semiconductor device having a normal function means is provided, in which the amplitude of an output signal is prevented from being decreased even when a digital circuit using transistors having one conductivity is employed. By turning OFF a diode-connected transistor 101, the gate terminal of a first transistor 102 is brought into a floating state. At this time, the first transistor 102 is ON and its gate-source voltage is stored in a capacitor. Then, when a potential at the source terminal of the first transistor 102 is increased, a potential at the gate terminal of the first transistor 102 is increased as well by bootstrap effect. As a result, the amplitude of an output signal is prevented from being decreased.Type: ApplicationFiled: December 28, 2021Publication date: April 21, 2022Inventors: Hajime Kimura, Yutaka Shionoiri
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Publication number: 20220093452Abstract: An object is to provide a semiconductor device with reduced standby power. A transistor including an oxide semiconductor as an active layer is used as a switching element, and supply of a power supply voltage to a circuit in an integrated circuit is controlled by the switching element. Specifically, when the circuit is in an operation state, supply of the power supply voltage to the circuit is performed by the switching element, and when the circuit is in a stop state, supply of the power supply voltage to the circuit is stopped by the switching element. In addition, the circuit supplied with the power supply voltage includes a semiconductor element which is a minimum unit included in an integrated circuit formed using a semiconductor. Further, the semiconductor included in the semiconductor element contains silicon having crystallinity (crystalline silicon).Type: ApplicationFiled: December 1, 2021Publication date: March 24, 2022Inventors: Yutaka SHIONOIRI, Kosei NODA
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Patent number: 11217200Abstract: A semiconductor device having a normal function means is provided, in which the amplitude of an output signal is prevented from being decreased even when a digital circuit using transistors having one conductivity is employed. By turning OFF a diode-connected transistor, the gate terminal of a first transistor is brought into a floating state. At this time, the first transistor is ON and its gate-source voltage is stored in a capacitor. Then, when a potential at the source terminal of the first transistor is increased, a potential at the gate terminal of the first transistor is increased as well by bootstrap effect. As a result, the amplitude of an output signal is prevented from being decreased.Type: GrantFiled: December 14, 2020Date of Patent: January 4, 2022Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hajime Kimura, Yutaka Shionoiri
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Publication number: 20210226456Abstract: Deterioration of a power storage device is reduced. Switches that control the connections of a plurality of power storage devices separately are provided. The switches are controlled with a plurality of control signals, so as to switch between charge and discharge of each of the power storage devices or between serial connection and parallel connection of the plurality of power storage devices. Further, a semiconductor circuit having a function of carrying out arithmetic is provided for the power storage devices, so that a control system of the power storage devices or a power storage system is constructed.Type: ApplicationFiled: January 15, 2021Publication date: July 22, 2021Inventors: Minoru TAKAHASHI, Junpei MOMO, Yutaka SHIONOIRI
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Publication number: 20210167067Abstract: It is an object to provide a memory device whose power consumption can be suppressed and a semiconductor device including the memory device. As a switching element for holding electric charge accumulated in a transistor which functions as a memory element, a transistor including an oxide semiconductor film as an active layer is provided for each memory cell in the memory device. The transistor which is used as a memory element has a first gate electrode, a second gate electrode, a semiconductor film located between the first gate electrode and the second gate electrode, a first insulating film located between the first gate electrode and the semiconductor film, a second insulating film located between the second gate electrode and the semiconductor film, and a source electrode and a drain electrode in contact with the semiconductor film.Type: ApplicationFiled: October 2, 2020Publication date: June 3, 2021Inventors: Yutaka SHIONOIRI, Hiroyuki MIYAKE, Kiyoshi KATO
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Publication number: 20210135674Abstract: An object is to provide a semiconductor device that can maintain the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units even after supply of power supply voltage is stopped. Another object is to provide a semiconductor device in which the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units can be changed at high speed. In a reconfigurable circuit, an oxide semiconductor is used for a semiconductor element that stores data on the circuit configuration, connection relation, or the like. Specifically, the oxide semiconductor is used for a channel formation region of the semiconductor element.Type: ApplicationFiled: January 15, 2021Publication date: May 6, 2021Inventors: Masashi FUJITA, Yutaka SHIONOIRI, Kiyoshi KATO, Hidetomo KOBAYASHI
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Publication number: 20210134240Abstract: A semiconductor device having a normal function means is provided, in which the amplitude of an output signal is prevented from being decreased even when a digital circuit using transistors having one conductivity is employed. By turning OFF a diode-connected transistor 101, the gate terminal of a first transistor 102 is brought into a floating state. At this time, the first transistor 102 is ON and its gate-source voltage is stored in a capacitor. Then, when a potential at the source terminal of the first transistor 102 is increased, a potential at the gate terminal of the first transistor 102 is increased as well by bootstrap effect. As a result, the amplitude of an output signal is prevented from being decreased.Type: ApplicationFiled: December 14, 2020Publication date: May 6, 2021Inventors: Hajime Kimura, Yutaka Shionoiri
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Patent number: 10910404Abstract: Provided is a semiconductor device which has low power consumption and can operate at high speed. The semiconductor device includes a memory element including a first transistor including crystalline silicon in a channel formation region, a capacitor for storing data of the memory element, and a second transistor which is a switching element for controlling supply, storage, and release of charge in the capacitor. The second transistor is provided over an insulating film covering the first transistor. The first and second transistors have a source electrode or a drain electrode in common.Type: GrantFiled: January 24, 2019Date of Patent: February 2, 2021Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yoshinori Ieda, Atsuo Isobe, Yutaka Shionoiri, Tomoaki Atsumi
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Patent number: 10897258Abstract: An object is to provide a semiconductor device that can maintain the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units even after supply of power supply voltage is stopped. Another object is to provide a semiconductor device in which the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units can be changed at high speed. In a reconfigurable circuit, an oxide semiconductor is used for a semiconductor element that stores data on the circuit configuration, connection relation, or the like. Specifically, the oxide semiconductor is used for a channel formation region of the semiconductor element.Type: GrantFiled: December 6, 2019Date of Patent: January 19, 2021Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masashi Fujita, Yutaka Shionoiri, Kiyoshi Kato, Hidetomo Kobayashi
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Patent number: 10897152Abstract: Deterioration of a power storage device is reduced. Switches that control the connections of a plurality of power storage devices separately are provided. The switches are controlled with a plurality of control signals, so as to switch between charge and discharge of each of the power storage devices or between serial connection and parallel connection of the plurality of power storage devices. Further, a semiconductor circuit having a function of carrying out arithmetic is provided for the power storage devices, so that a control system of the power storage devices or a power storage system is constructed.Type: GrantFiled: February 3, 2017Date of Patent: January 19, 2021Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Minoru Takahashi, Junpei Momo, Yutaka Shionoiri
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Patent number: 10867576Abstract: A semiconductor device having a normal function means is provided, in which the amplitude of an output signal is prevented from being decreased even when a digital circuit using transistors having one conductivity is employed. By turning OFF a diode-connected transistor 101, the gate terminal of a first transistor 102 is brought into a floating state. At this time, the first transistor 102 is ON and its gate-source voltage is stored in a capacitor. Then, when a potential at the source terminal of the first transistor 102 is increased, a potential at the gate terminal of the first transistor 102 is increased as well by bootstrap effect. As a result, the amplitude of an output signal is prevented from being decreased.Type: GrantFiled: July 30, 2019Date of Patent: December 15, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hajime Kimura, Yutaka Shionoiri
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Patent number: 10797054Abstract: It is an object to provide a memory device whose power consumption can be suppressed and a semiconductor device including the memory device. As a switching element for holding electric charge accumulated in a transistor which functions as a memory element, a transistor including an oxide semiconductor film as an active layer is provided for each memory cell in the memory device. The transistor which is used as a memory element has a first gate electrode, a second gate electrode, a semiconductor film located between the first gate electrode and the second gate electrode, a first insulating film located between the first gate electrode and the semiconductor film, a second insulating film located between the second gate electrode and the semiconductor film, and a source electrode and a drain electrode in contact with the semiconductor film.Type: GrantFiled: October 13, 2016Date of Patent: October 6, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yutaka Shionoiri, Hiroyuki Miyake, Kiyoshi Kato
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Patent number: 10693448Abstract: Provided is a semiconductor device that can directly compare two negative potentials. The semiconductor device includes a first to a third transistor and a load and is configured to compare a first negative potential and a second negative potential. The first negative potential and the second negative potential are input to a gate of the first transistor and a gate of the second transistor, respectively. Each drain of the first transistor and the second transistor is electrically connected to the load. The third transistor serves as a current source. The first transistor and the second transistor each include a backgate. A positive potential is input to the backgates.Type: GrantFiled: March 25, 2019Date of Patent: June 23, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kiyoshi Kato, Yutaka Shionoiri, Tomoaki Atsumi, Takanori Matsuzaki
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Publication number: 20200112313Abstract: An object is to provide a semiconductor device that can maintain the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units even after supply of power supply voltage is stopped. Another object is to provide a semiconductor device in which the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units can be changed at high speed. In a reconfigurable circuit, an oxide semiconductor is used for a semiconductor element that stores data on the circuit configuration, connection relation, or the like. Specifically, the oxide semiconductor is used for a channel formation region of the semiconductor element.Type: ApplicationFiled: December 6, 2019Publication date: April 9, 2020Inventors: Masashi FUJITA, Yutaka SHIONOIRI, Kiyoshi KATO, Hidetomo KOBAYASHI
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Patent number: 10615187Abstract: A highly reliable semiconductor device capable of retaining data for a long period is provided. The transistor includes a first gate electrode, a first gate insulator over the first gate electrode, a first oxide and a second oxide over the first gate insulator, a first conductor over the first oxide, a second conductor over the second oxide, a third oxide covering the first gate insulator, the first oxide, the first conductor, the second oxide, and the second conductor, a second gate insulator over the third oxide, and a second gate electrode over the second gate insulator. An end portion of the second gate electrode is positioned between an end portion of the first conductor and an end portion of the second conductor in a channel length direction.Type: GrantFiled: July 25, 2017Date of Patent: April 7, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shinpei Matsuda, Daigo Ito, Daisuke Matsubayashi, Yasutaka Suzuki, Etsuko Kamata, Yutaka Shionoiri, Shuhei Nagatsuka
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Publication number: 20200027420Abstract: A semiconductor device having a normal function means is provided, in which the amplitude of an output signal is prevented from being decreased even when a digital circuit using transistors having one conductivity is employed. By turning OFF a diode-connected transistor 101, the gate terminal of a first transistor 102 is brought into a floating state. At this time, the first transistor 102 is ON and its gate-source voltage is stored in a capacitor. Then, when a potential at the source terminal of the first transistor 102 is increased, a potential at the gate terminal of the first transistor 102 is increased as well by bootstrap effect. As a result, the amplitude of an output signal is prevented from being decreased.Type: ApplicationFiled: July 30, 2019Publication date: January 23, 2020Inventors: Hajime Kimura, Yutaka Shionoiri