Abstract: In order to furnish an optical component and a phase contrast microscope which can indicate difference of phases of a specimen including information of frequency and color, at least two optical mediums are arranged side by side so that a constant difference of the phases is generated.

Abstract: In order to furnish an optical component and a phase contrast microscope which can indicate difference of phases of a specimen including information of frequency and color, at least two optical mediums are arranged side by side so that a constant difference of the phases is generated.

Abstract: A catadioptric optical system comprising a first imaging optical system for forming an intermediate image of a first plane surface, a second imaging optical system for forming a final image of the first plane surface onto a second plane surface which is substantially parallel to the first plane surface, and a catadioptric type optical system disposed in the optical path from the first plane surface to the second plane surface and including a first reflecting surface which reflects light coming from through the first plane surface and a second reflecting surface for directing the light reflected by the first reflecting surface toward the second plane surface. At least one of the first and second reflecting surfaces is a concave reflecting surface. All of the optical elements of the catadioptric optical system are disposed on a single linear optical axis.

Abstract: This invention provides a relay imaging optical system which is composed of a small number of lenses and can be miniaturized and reduced in weight with maintaining required optical characteristics. This relay imaging optical system is provided for forming an image of a first plane (10) on a second plane (M), and comprises a first lens group G1 which is constructed so that an image plane thereof is positioned within a limited range, a second lens group G2, and a third lens group G3, from the first plane side. At least two lens groups of the first lens group through the third lens group have at least one aspheric surface respectively; and the total number of lenses which constitute this optical system are ten or fewer.

Abstract: A projection optical system according to the present invention whose image side numerical aperture is greater than or equal to 0.75, and which forms an image of a first object upon a second object using light of a predetermined wavelength less than or equal to 300 nm, comprises: a first lens group G1 of positive refractive power; a second lens group G2 of negative refractive power; a third lens group G3 of positive refractive power; and a fourth lens group G4 of positive refractive power, and: the first lens group G1, the second lens group G2, the third lens group G3 and the fourth lens group G4 are arranged in order from a side of the first object; and a distance D in mm along an optical axis between an optical surface of the fourth lens group G4 closest to the second object, and the second object, satisfies a condition of 0.1<D<5.

Abstract: A projection optical system according to the present invention whose image side numerical aperture is greater than or equal to 0.75, and which forms an image of a first object upon a second object using light of a predetermined wavelength less than or equal to 300 nm, comprises: a first lens group G1 of positive refractive power; a second lens group G2 of negative refractive power; a third lens group G3 of positive refractive power; and a fourth lens group G4 of positive refractive power, and: the first lens group G1, the second lens group G2, the third lens group G3 and the fourth lens group G4 are arranged in order from a side of the first object; and a distance D in mm along an optical axis between an optical surface of the fourth lens group G4 closest to the second object, and the second object, satisfies a condition of 0.1<D<5.

Abstract: This invention provides a relay imaging optical system which is composed of a small number of lenses and can be miniaturized and reduced in weight with maintaining required optical characteristics. This relay imaging optical system is provided for forming an image of a first plane (10) on a second plane (M), and comprises a first lens group G1 which is constructed so that an image plane thereof is positioned within a limited range, a second lens group G2, and a third lens group G3, from the first plane side. At least two lens groups of the first lens group through the third lens group have at least one aspheric surface respectively; and the total number of lenses which constitute this optical system are ten or fewer.

Abstract: An exposure apparatus (PE1) and exposure method for use in photolithographically manufacturing devices such as semiconductor devices, image pickup devices, liquid crystal display devices and thin film magnetic heads. The apparatus is capable of transferring onto a substrate (W) the image of a pattern on a reticle (R) and includes a light source (2) capable of supplying an exposure energy beam (IL) with a wavelength under 200 nm, and an illumination optical system arranged to receive the exposure energy beam from said light source. The illumination optical system is designed to guide the exposure energy beam to the reticle. The apparatus also includes a projection optical system (PL) arranged between the reticle and the substrate. The projection optical system is capable of forming an image of the reticle pattern onto the substrate based on the exposure energy beam passing through the reticle.

Abstract: A projection optical system according to the present invention whose image side numerical aperture is greater than or equal to 0.75, and which forms an image of a first object upon a second object using light of a predetermined wavelength less than or equal to 300 nm, comprises: a first lens group G1 of positive refractive power; a second lens group G2 of negative refractive power; a third lens group G3 of positive refractive power; and a fourth lens group G4 of positive refractive power, and: the first lens group G1, the second lens group G2, the third lens group G3 and the fourth lens group G4 are arranged in order from a side of the first object; and a distance D in mm along an optical axis between an optical surface of the fourth lens group G4 closest to the second object, and the second object, satisfies a condition of 0.1<D<5.

Abstract: An exposure apparatus (PE1) and exposure method for use in photolithographically manufacturing devices such as semiconductor devices, image pickup devices, liquid crystal display devices and thin film magnetic heads. The apparatus is capable of transferring onto a substrate (W) the image of a pattern on a reticle (R) and includes a light source (2) capable of supplying an exposure energy beam (IL) with a wavelength under 200 nm, and an illumination optical system arranged to receive the exposure energy beam from said light source. The illumination optical system is designed to guide the exposure energy beam to the reticle. The apparatus also includes a projection optical system (PL) arranged between the. reticle and the substrate. The projection optical system is capable of forming an image of the reticle pattern onto the substrate based on the exposure energy beam passing through the reticle.

Abstract: An exposure apparatus (PE1) and exposure method for use in photolithographically manufacturing devices such as semiconductor devices, image pickup devices, liquid crystal display devices and thin film magnetic heads. The apparatus is capable of transferring onto a substrate (W) the image of a pattern on a reticle (R) and includes a light source (2) capable of supplying an exposure energy beam (IL) with a wavelength under 200 nm, and an illumination optical system arranged to receive the exposure energy beam from said light source. The illumination optical system is designed to guide the exposure energy beam to the reticle. The apparatus also includes a projection optical system (PL) arranged between the reticle and the substrate. The projection optical system is capable of forming an image of the reticle pattern onto the substrate based on the exposure energy beam passing through the reticle.

Abstract: A projection optical system according to the present invention whose image side numerical aperture is greater than or equal to 0.75, and which forms an image of a first object upon a second object using light of a predetermined wavelength less than or equal to 300 nm, comprises: a first lens group G1 of positive refractive power; a second lens group G2 of negative refractive power; a third lens group G3 of positive refractive power; and a fourth lens group G4 of positive refractive power, and: the first lens group G1, the second lens group G2, the third lens group G3 and the fourth lens group G4 are arranged in order from a side of the first object; and a distance D in mm along an optical axis between an optical surface of the fourth lens group G4 closest to the second object, and the second object, satisfies a condition of 0.1<D<5.

Abstract: An exposure apparatus (PE1) and exposure method for use in photolithographically manufacturing devices such as semiconductor devices, image pickup devices, liquid crystal display devices and thin film magnetic heads. The apparatus is capable of transferring onto a substrate (W) the image of a pattern on a reticle (R) and includes a light source (2) capable of supplying an exposure energy beam (IL) with a wavelength under 200 nm, and an illumination optical system arranged to receive the exposure energy beam from said light source. The illumination optical system is designed to guide the exposure energy beam to the reticle. The apparatus also includes a projection optical system (PL) arranged between the reticle and the substrate. The projection optical system is capable of forming an image of the reticle pattern onto the substrate based on the exposure energy beam passing through the reticle.

Abstract: A projection optical system according to the present invention whose image side numerical aperture is greater than or equal to 0.75, and which forms an image of a first object upon a second object using light of a predetermined wavelength less than or equal to 300 nm, comprises: a first lens group G1 of positive refractive power; a second lens group G2 of negative refractive power; a third lens group G3 of positive refractive power; and a fourth lens group G4 of positive refractive power, and: the first lens group G1, the second lens group G2, the third lens group G3 and the fourth lens group G4 are arranged in order from a side of the first object; and a distance D in mm along an optical axis between an optical surface of the fourth lens group G4 closest to the second object, and the second object, satisfies a condition of 0.1<D<5.

Abstract: A condenser optical system obtains a predetermined, desired optical characteristic in a simple structure having a small number of lenses. A condenser optical system having an entrance focal plane and an exit focal plane, and that forms an image at the exit focal plane of an object located at the entrance focal plane, includes in order from an object side, a first lens group having a negative lens having a concave surface that faces the object side, a second lens group having a positive lens, and a third lens group. The first lens group has at least one aspherical lens surface.

Abstract: An exposure apparatus (PE1) and exposure method for use in photolithographically manufacturing devices such as semiconductor devices, image pickup devices, liquid crystal display devices and thin film magnetic heads. The apparatus is capable of transferring onto a substrate (W) the image of a pattern on a reticle (R) and includes a light source (2) capable of supplying an exposure energy beam (IL) with a wavelength under 200 nm, and an illumination optical system arranged to receive the exposure energy beam from said light source. The illumination optical system is designed to guide the exposure energy beam to the reticle. The apparatus also includes a projection optical system (PL) arranged between the reticle and the substrate. The projection optical system is capable of forming an image of the reticle pattern onto the substrate based on the exposure energy beam passing through the reticle.

Abstract: An exposure apparatus (PE1) and exposure method for use in photolithographically manufacturing devices such as semiconductor devices, image pickup devices, liquid crystal display devices and thin film magnetic heads. The apparatus is capable of transferring onto a substrate (W) the image of a pattern on a reticle (R) and includes a light source (2) capable of supplying an exposure energy beam (IL) with a wavelength under 200 nm, and an illumination optical system arranged to receive the exposure energy beam from said light source. The illumination optical system is designed to guide the exposure energy beam to the reticle. The apparatus also includes a projection optical system (PL) arranged between the reticle and the substrate. The projection optical system is capable of forming an image of the reticle pattern onto the substrate based on the exposure energy beam passing through the reticle.

Abstract: An exposure apparatus (PE1) and exposure method for use in photolithographically manufacturing devices such as semiconductor devices, image pickup devices, liquid crystal display devices and thin film magnetic heads. The apparatus is capable of transferring onto a substrate (W) the image of a pattern on a reticle (R) and includes a light source (2) capable of supplying an exposure energy beam (IL) with a wavelength under 200 nm, and an illumination optical system arranged to receive the exposure energy beam from said light source. The illumination optical system is designed to guide the exposure energy beam to the reticle. The apparatus also includes a projection optical system (PL) arranged between the reticle and the substrate. The projection optical system is capable of forming an image of the reticle pattern onto the substrate based on the exposure energy beam passing through the reticle.

Abstract: The present invention relates to an exposure apparatus using a projection optical system to realize a small size and the bitelecentricity as securing a wide exposure area and a large numerical aperture and to realize extremely good correction for aberrations, particularly for distortion.

Abstract: In the projection optical system that projects an image of the first object onto the second object with a fixed reduction ratio and a projection aligner equipped therewith, said projection optical system comprises, viewed from said first object side, in order of succession, the first group of lenses with positive refractive power, and the second group of lenses virtually consists of afocal system, and the third group of lens with positive refractive power, and if the focal length of the overall system is represented by F, the projection magnification ratio of said projection optical system is represented by B, the distance between said first object and said second object is represented by L, and when a ray from the second object side of said projection optical system that is parallel to the optical axis of said projection optical system is incident on said projection optical system, a distance between a point where an extension on the first object side of said ray intercepts the optical axis and said first ob