Abstract: A semiconductor device should have a structure that allows locating electronic components in a region under a bonding pad. The semiconductor device includes a bonding pad constituting the external connection terminal; a region under the bonding pad including at least two copper layers and a connection via plug, under said bonding pad, disposed so as to connect copper layers that form a pair out of the at least two copper layers; a seal ring constituted of an annular conductor, disposed so as to surround the region under the bonding pad, and to connect a lower one of the copper layers that form said pair to copper layer to form a pair with the lower copper layer; and an interconnect connected to the bonding pad outside the seal ring.

Abstract: A semiconductor device should have a structure that allows locating electronic components in a region under a bonding pad. The semiconductor device includes a bonding pad constituting the external connection terminal; a region under the bonding pad including at least two copper layers and a connection via plug, under said bonding pad, disposed so as to connect copper layers that form a pair out of the at least two copper layers; a seal ring constituted of an annular conductor, disposed so as to surround the region under the bonding pad, and to connect a lower one of the copper layers that form said pair to copper layer to form a pair with the lower copper layer; and an interconnect connected to the bonding pad outside the seal ring.

Abstract: The present invention discloses a semiconductor device having a PNP bipolar transistor and an NPN bipolar transistor having excellent transistor characteristics formed on the same semiconductor substrate, and a method of manufacturing the semiconductor device. This semiconductor device is provided with a first n-type well and a second n-type well formed at substantially the same depths in a semiconductor substrate, an NPN bipolar transistor formed within the first n-type well which uses the n-type well as its collector, a p-type well formed within the second n-type well, and a PNP bipolar transistor formed within the p-type well which uses the p-type well as its collector.