Patents by Inventor Yutaka Yuge

Yutaka Yuge has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Manufacturing method of a semiconductor apparatus having an electron donative surface in a side wall portion
    Patent number: 5963812
    Abstract: An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.
    Type: Grant
    Filed: March 10, 1997
    Date of Patent: October 5, 1999
    Assignee: Canon Kabushiki Kaisha
    Inventors: Yuzo Kataoka, Tetsuo Asaba, Kenji Makino, Hiroshi Yuzurihara, Kei Fujita, Seiji Kamei, Yutaka Akino, Yutaka Yuge, Mineo Shimotsusa, Hideshi Kuwabara
  • Semiconductor device having an electrode which controls a surface state of the base area for minimizing a change of the D.C. amplification ratio
    Patent number: 5610435
    Abstract: A bipolar transistor having a control electrode area of a semiconductor of a first conductive type, and first and second main electrode areas positioned in contact with the control electrode area and composed of a semiconductor of a second conductive type different from the first conductive type, comprises, for the purpose of preventing depletion of the surface of the control electrode area and suppressing or annulating the current generated in the surfacial depletion area, an electrode for controlling the surface state of the control electrode area, positioned, across an insulation film, on the surface of the control electrode area including the vicinity of the junction between the control electrode area and the above-mentioned first main electrode area.
    Type: Grant
    Filed: June 18, 1996
    Date of Patent: March 11, 1997
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hidenori Watanabe, Junichi Hoshi, Yutaka Yuge, Akira Okita, Hideshi Kuwabara
  • Method of manufacturing a ROM device having contact holes treated with hydrogen atoms and energy beam
    Patent number: 5580808
    Abstract: A method for manufacturing a mask ROM by first forming a contact hole with a semiconductor within. A surface treatment is then applied to supply by hydrogen atoms to the surface of the semiconductor. The contact hole is selectively irradiated with energy beams so as to produce an irradiated contact hole and a non-irradiated contact hole. In the non-irradiated contact hole a conductive or semiconductor thin film is formed and a circuit formed on the conductive or semiconductor thin film. The circuit and the non-irradiated hole are connected to each other and the irradiated hole and the circuit are insulated from each other.
    Type: Grant
    Filed: October 24, 1994
    Date of Patent: December 3, 1996
    Assignee: Canon Kabushiki Kaisha
    Inventors: Yuzo Kataoka, Tetsuo Asaba, Kenji Makino, Hiroshi Yuzurihara, Kei Fujita, Seiji Kamei, Yutaka Akino, Yutaka Yuge, Mineo Shimotsusa, Hideshi Kuwabara
  • Method of forming metal pattern including a schottky diode
    Patent number: 5569614
    Abstract: An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.
    Type: Grant
    Filed: May 5, 1995
    Date of Patent: October 29, 1996
    Assignee: Canon Kabushiki Kaisha
    Inventors: Yuzo Kataoka, Tetsuo Asaba, Kenji Makino, Hiroshi Yuzurihara, Kei Fujita, Seiji Kamei, Yutaka Akino, Yutaka Yuge, Mineo Shimotsusa, Hideshi Kuwabara
  • Method of forming a capacitor having contact hole treated with hydrogen atoms and energy beam
    Patent number: 5527730
    Abstract: An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.
    Type: Grant
    Filed: April 19, 1995
    Date of Patent: June 18, 1996
    Assignee: Conon Kabushiki Kaisha
    Inventors: Yuzo Kayaoka, Tetsuo Asaba, Kenji Makino, Hiroshi Yuzurihara, Kei Fujita, Seiji Kamei, Yutaka Akino, Yutaka Yuge, Mineo Shimotsusa, Hideshi Kuwabara