Patents by Inventor Yutaro Ebata
Yutaro Ebata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10199338Abstract: A semiconductor device includes plural electrode pads arranged in an active region of a semiconductor chip, and wiring layers provided below the plural electrode pads wherein occupation rates of wirings arranged within the regions of the electrode pads are, respectively, made uniform for every wiring layer. To this end, in a region where an occupation rate of wiring is smaller than those in other regions, a dummy wiring is provided. On the contrary, when the occupation rate of wiring is larger than in other regions, slits are formed in the wiring to control the wiring occupation rate. In the respective wirings layers, the shapes, sizes and intervals of wirings below the respective electrode pads are made similar or equal to one another.Type: GrantFiled: May 12, 2016Date of Patent: February 5, 2019Assignee: Renesas Electronics CorporationInventors: Taku Kanaoka, Masashi Sahara, Yoshio Fukayama, Yutaro Ebata, Kazuhisa Higuchi, Koji Fujishima
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Publication number: 20160284652Abstract: A semiconductor device includes plural electrode pads arranged in an active region of a semiconductor chip, and wiring layers provided below the plural electrode pads wherein occupation rates of wirings arranged within the regions of the electrode pads are, respectively, made uniform for every wiring layer. To this end, in a region where an occupation rate of wiring is smaller than those in other regions, a dummy wiring is provided. On the contrary, when the occupation rate of wiring is larger than in other regions, slits are formed in the wiring to control the wiring occupation rate. In the respective wirings layers, the shapes, sizes and intervals of wirings below the respective electrode pads are made similar or equal to one another.Type: ApplicationFiled: May 12, 2016Publication date: September 29, 2016Inventors: Taku KANAOKA, Masashi SAHARA, Yoshio FUKAYAMA, Yutaro EBATA, Kazuhisa HIGUCHI, Koji FUJISHIMA
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Patent number: 8778790Abstract: A rewiring is formed by forming a Cu seed layer of copper over an opening and insulating films, forming a photoresist film over the Cu seed layer, a step of forming copper film by plating-growth over the Cu seed layer, and forming a Ni film. After forming an Au film in an opening (pad region) over the rewiring, the photoresist film is removed and passivation processing is performed on the Ni film. Then, the Cu seed layer other than the formation region of the rewiring is etched. According to these steps, a passivation film is formed on the surface of the Ni film and the reduction in film thickness of the Ni film by the etching can be reduced. Furthermore, it is possible to reduce trouble due to distortion of a substrate resulting from an increase in thickness of the Ni film in view of reduction in film thickness.Type: GrantFiled: January 27, 2012Date of Patent: July 15, 2014Assignee: Renesas Electronics CorporationInventors: Tota Maitani, Yutaro Ebata
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Publication number: 20140159245Abstract: A semiconductor device includes plural electrode pads arranged in an active region of a semiconductor chip, and wiring layers provided below the plural electrode pads wherein occupation rates of wirings arranged within the regions of the electrode pads are, respectively, made uniform for every wiring layer. To this end, in a region where an occupation rate of wiring is smaller than those in other regions, a dummy wiring is provided. On the contrary, when the occupation rate of wiring is larger than in other regions, slits are formed in the wiring to control the wiring occupation rate. In the respective wirings layers, the shapes, sizes and intervals of wirings below the respective electrode pads are made similar or equal to one another.Type: ApplicationFiled: February 12, 2014Publication date: June 12, 2014Applicants: Renesas Electronics Corporation, Hitachi Device Engineering Co., Ltd., Hitachi ULSI Systems Co., Ltd.Inventors: Taku KANAOKA, Masashi SAHARA, Yoshio FUKAYAMA, Yutaro EBATA, Kazuhisa HIGUCHI, Koji FUJISHIMA
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Patent number: 8669659Abstract: A semiconductor device includes plural electrode pads arranged in an active region of a semiconductor chip, and wiring layers provided below the plural electrode pads wherein occupation rates of wirings arranged within the regions of the electrode pads are, respectively, made uniform for every wiring layer. To this end, in a region where an occupation rate of wiring is smaller than those in other regions, a dummy wiring is provided. On the contrary, when the occupation rate of wiring is larger than in other regions, slits are formed in the wiring to control the wiring occupation rate. In the respective wirings layers, the shapes, sizes and intervals of wirings below the respective electrode pads are made similar or equal to one another.Type: GrantFiled: April 24, 2012Date of Patent: March 11, 2014Assignees: Renesas Electronics Corporation, Hitachi ULSI Systems Co., Ltd.Inventors: Taku Kanaoka, Masashi Sahara, Yoshio Fukayama, Yutaro Ebata, Kazuhisa Higuchi, Koji Fujishima
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Publication number: 20120205788Abstract: A semiconductor device includes plural electrode pads arranged in an active region of a semiconductor chip, and wiring layers provided below the plural electrode pads wherein occupation rates of wirings arranged within the regions of the electrode pads are, respectively, made uniform for every wiring layer. To this end, in a region where an occupation rate of wiring is smaller than those in other regions, a dummy wiring is provided. On the contrary, when the occupation rate of wiring is larger than in other regions, slits are formed in the wiring to control the wiring occupation rate. In the respective wirings layers, the shapes, sizes and intervals of wirings below the respective electrode pads are made similar or equal to one another.Type: ApplicationFiled: April 24, 2012Publication date: August 16, 2012Inventors: TAKU KANAOKA, Masashi Sahara, Yoshio Fukayama, Yutaro Ebata, Kazuhisa Higuchi, Koji Fujishima
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Publication number: 20120193787Abstract: A rewiring is formed by forming a Cu seed layer of copper over an opening and insulating films, forming a photoresist film over the Cu seed layer, a step of forming copper film by plating-growth over the Cu seed layer, and forming a Ni film. After forming an Au film in an opening (pad region) over the rewiring, the photoresist film is removed and passivation processing is performed on the Ni film. Then, the Cu seed layer other than the formation region of the rewiring is etched. According to these steps, a passivation film is formed on the surface of the Ni film and the reduction in film thickness of the Ni film by the etching can be reduced. Furthermore, it is possible to reduce trouble due to distortion of a substrate resulting from an increase in thickness of the Ni film in view of reduction in film thickness.Type: ApplicationFiled: January 27, 2012Publication date: August 2, 2012Applicant: RENESAS ELECTRONICS CORPORATIONInventors: Tota MAITANI, Yutaro EBATA
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Patent number: 8183691Abstract: A semiconductor device includes plural electrode pads arranged in an active region of a semiconductor chip, and wiring layers provided below the plural electrode pads wherein occupation rates of wirings arranged within the regions of the electrode pads are, respectively, made uniform for every wiring layer. To this end, in a region where an occupation rate of wiring is smaller than those in other regions, a dummy wiring is provided. On the contrary, when the occupation rate of wiring is larger than in other regions, slits are formed in the wiring to control the wiring occupation rate. In the respective wirings layers, the shapes, sizes and intervals of wirings below the respective electrode pads are made similar or equal to one another.Type: GrantFiled: June 17, 2010Date of Patent: May 22, 2012Assignees: Renesas Electronics Corporation, Hitachi ULSI System Co., Ltd.Inventors: Taku Kanaoka, Masashi Sahara, Yoshio Fukayama, Yutaro Ebata, Kazuhisa Higuchi, Koji Fujishima
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Publication number: 20100252924Abstract: A semiconductor device includes plural electrode pads arranged in an active region of a semiconductor chip, and wiring layers provided below the plural electrode pads wherein occupation rates of wirings arranged within the regions of the electrode pads are, respectively, made uniform for every wiring layer. To this end, in a region where an occupation rate of wiring is smaller than those in other regions, a dummy wiring is provided. On the contrary, when the occupation rate of wiring is larger than in other regions, slits are formed in the wiring to control the wiring occupation rate. In the respective wirings layers, the shapes, sizes and intervals of wirings below the respective electrode pads are made similar or equal to one another.Type: ApplicationFiled: June 17, 2010Publication date: October 7, 2010Inventors: TAKU KANAOKA, Masashi Sahara, Yoshio Fukayama, Yutaro Ebata, Kazuhisa Higuchi, Koji Fujishima
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Patent number: 7759804Abstract: A semiconductor device includes plural electrode pads arranged in an active region of a semiconductor chip, and wiring layers provided below the plural electrode pads wherein occupation rates of wirings arranged within the regions of the electrode pads are, respectively, made uniform for every wiring layer. To this end, in a region where an occupation rate of wiring is smaller than those in other regions, a dummy wiring is provided. On the contrary, when the occupation rate of wiring is larger than in other regions, slits are formed in the wiring to control the wiring occupation rate. In the respective wirings layers, the shapes, sizes and intervals of wirings below the respective electrode pads are made similar or equal to one another.Type: GrantFiled: January 25, 2008Date of Patent: July 20, 2010Assignees: Renesas Technology Corp., Hitachi ULSI Systems Co., Ltd.Inventors: Taku Kanaoka, Masashi Sahara, Yoshio Fukayama, Yutaro Ebata, Kazuhisa Higuchi, Koji Fujishima
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Publication number: 20080122085Abstract: A semiconductor device includes plural electrode pads arranged in an active region of a semiconductor chip, and wiring layers provided below the plural electrode pads wherein occupation rates of wirings arranged within the regions of the electrode pads are, respectively, made uniform for every wiring layer. To this end, in a region where an occupation rate of wiring is smaller than those in other regions, a dummy wiring is provided. On the contrary, when the occupation rate of wiring is larger than in other regions, slits are formed in the wiring to control the wiring occupation rate. In the respective wirings layers, the shapes, sizes and intervals of wirings below the respective electrode pads are made similar or equal to one another.Type: ApplicationFiled: January 25, 2008Publication date: May 29, 2008Inventors: Taku Kanaoka, Masashi Sahara, Yoshio Fukayama, Yutaro Ebata, Kazuhisa Higuchi, Koji Fujishima
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Patent number: 7342302Abstract: A semiconductor device includes plural electrode pads arranged in an active region of a semiconductor chip, and wiring layers provided below the plural electrode pads wherein occupation rates of wirings arranged within the regions of the electrode pads are, respectively, made uniform for every wiring layer. To this end, in a region where an occupation rate of wiring is smaller than those in other regions, a dummy wiring is provided. On the contrary, when the occupation rate of wiring is larger than in other regions, slits are formed in the wiring to control the wiring occupation rate. In the respective wirings layers, the shapes, sizes and intervals of wirings below the respective electrode pads are made similar or equal to one another.Type: GrantFiled: July 20, 2006Date of Patent: March 11, 2008Assignees: Renesas Technology Corp., Hitachi ULSI Systems Co., Ltd.Inventors: Taku Kanaoka, Masashi Sahara, Yoshio Fukayama, Yutaro Ebata, Kazuhisa Higuchi, Koji Fujishima
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Publication number: 20060289998Abstract: A semiconductor device includes plural electrode pads arranged in an active region of a semiconductor chip, and wiring layers provided below the plural electrode pads wherein occupation rates of wirings arranged within the regions of the electrode pads are, respectively, made uniform for every wiring layer. To this end, in a region where an occupation rate of wiring is smaller than those in other regions, a dummy wiring is provided. On the contrary, when the occupation rate of wiring is larger than in other regions, slits are formed in the wiring to control the wiring occupation rate. In the respective wirings layers, the shapes, sizes and intervals of wirings below the respective electrode pads are made similar or equal to one another.Type: ApplicationFiled: July 20, 2006Publication date: December 28, 2006Inventors: Taku Kanaoka, Masashi Sahara, Yoshio Fukayama, Yutaro Ebata, Kazuhisa Higuchi, Koji Fujishima
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Patent number: 7102223Abstract: A semiconductor device includes plural electrode pads arranged in an active region of a semiconductor chip, and wiring layers provided below the plural electrode pads wherein occupation rates of wirings arranged within the regions of the electrode pads are, respectively, made uniform for every wiring layer. To this end, in a region where an occupation rate of wiring is smaller than those in other regions, a dummy wiring is provided. On the contrary, when the occupation rate of wiring is larger than in other regions, slits are formed in the wiring to control the wiring occupation rate. In the respective wirings layers, the shapes, sizes and intervals of wirings below the respective electrode pads are made similar or equal to one another.Type: GrantFiled: August 5, 2003Date of Patent: September 5, 2006Assignees: Renesas Technology Corp., Hitachi ULSI Systems Co., Ltd.Inventors: Taku Kanaoka, Masashi Sahara, Yoshio Fukayama, Yutaro Ebata, Kazuhisa Higuchi, Koji Fujishima