Patents by Inventor Yutaro Takeshita

Yutaro Takeshita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Cleaning liquid, cleaning method, and method for producing semiconductor wafer
    Patent number: 11597896
    Abstract: The present invention relates to a cleaning liquid containing a component (A): a compound represented by the following formula (1), component (B): alkylamine, component (C): polycarboxylic acid, and component (D): ascorbic acid, in which a mass ratio of the component (A) to a total mass of the component (B) and the component (C) is 1 to 15, and in the formula (1), R1, R2, and R3 each have a definition same as the definition described in the description,
    Type: Grant
    Filed: February 18, 2021
    Date of Patent: March 7, 2023
    Assignee: Mitsubishi Chemical Corporation
    Inventors: Toshiaki Shibata, Yasuhiro Kawase, Ken Harada, Atsushi Ito, Tomohiro Kusano, Yutaro Takeshita
  • Cleaning liquid, cleaning method, and method for producing semiconductor wafer
    Patent number: 11149231
    Abstract: A cleaning liquid containing at least one surfactant (A) selected from the group consisting of a polyoxyalkylene alkyl ether phosphoric acid, a polyoxyalkylene alkyl ether acetic acid and a polyoxyalkylene alkyl ether sulfonic acid and a chelating agent (C), which has a pH of 8 or more, and a cleaning liquid containing an oxidizing agent (B) and a chelating agent (C), which has a pH of 8 or more.
    Type: Grant
    Filed: March 31, 2020
    Date of Patent: October 19, 2021
    Assignee: Mitsubishi Chemical Corporation
    Inventors: Ken Harada, Yutaro Takeshita, Toshiaki Shibata, Kan Takeshita
  • CLEANING LIQUID, CLEANING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR WAFER
    Publication number: 20210171878
    Abstract: The present invention relates to a cleaning liquid containing a component (A): a compound represented by the following formula (1), component (B): alkylamine, component (C): polycarboxylic acid, and component (D): ascorbic acid, in which a mass ratio of the component (A) to a total mass of the component (B) and the component (C) is 1 to 15, and in the formula (1), R1, R2, and R3 each have a definition same as the definition described in the description,
    Type: Application
    Filed: February 18, 2021
    Publication date: June 10, 2021
    Applicant: Mitsubishi Chemical Corporation
    Inventors: Toshiaki SHIBATA, Yasuhiro KAWASE, Ken HARADA, Atsushi ITO, Tomohiro KUSANO, Yutaro TAKESHITA
  • CLEANING LIQUID, CLEANING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR WAFER
    Publication number: 20200231900
    Abstract: A cleaning liquid containing at least one surfactant (A) selected from the group consisting of a polyoxyalkylene alkyl ether phosphoric acid, a polyoxyalkylene alkyl ether acetic acid and a polyoxyalkylene alkyl ether sulfonic acid and a chelating agent (C), which has a pH of 8 or more, and a cleaning liquid containing an oxidizing agent (B) and a chelating agent (C), which has a pH of 8 or more.
    Type: Application
    Filed: March 31, 2020
    Publication date: July 23, 2020
    Applicant: Mitsubishi Chemical Corporation
    Inventors: Ken HARADA, Yutaro TAKESHITA, Toshiaki SHIBATA, Kan TAKESHITA
  • METHOD FOR PRODUCING M-PLANE NITRIDE-BASED LIGHT-EMITTING DIODE
    Publication number: 20150125980
    Abstract: Provided is a novel method for producing an m-plane nitride-based LED, the method making it possible to obtain an m-plane nitride-based LED reduced in forward voltage. The method comprising (i) a step of forming an active layer consisting of a nitride semiconductor over an n-type nitride semiconductor layer in which an angle between the thickness direction and the m-axis of a hexagonal crystal is 10 degrees or less, (ii) a step of forming an AlGaN layer doped with a p-type impurity over the active layer, (iii) a step of forming a contact layer consisting of InGaN is formed on the surface of the AlGaN layer, and (iv) a step of forming an electrode on the surface of the contact layer.
    Type: Application
    Filed: December 24, 2014
    Publication date: May 7, 2015
    Applicants: MITSUBISHI CHEMICAL CORPORATION, SEOUL VIOSYS CO., LTD.
    Inventors: Kaori Kurihara, Yutaro Takeshita, Kenji Shimoyama, Shinji Takai