Patents by Inventor Yu-Ting Liao

Yu-Ting Liao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240204482
    Abstract: A laser radar device includes a light source module, a collimating module, an optical phase-controlled array, a processing module, and a receiving module. The collimating module collimates the laser beam emitted by the light source module. The optical phase-controlled array deflects the collimated laser beam and reflects the deflected laser beam for making the reflected laser beam to illuminate at a target object. The receiving module receives the laser beam reflected by the target object and converts the received laser beam into electric signals. The processing module calculate a distance between the laser radar device and the target object based on the received electric signals. An accuracy of calculating the distance between the laser radar device and the target object is improved.
    Type: Application
    Filed: December 13, 2023
    Publication date: June 20, 2024
    Inventors: KUO-FONG TSENG, YU-TING LIAO
  • Patent number: 6909300
    Abstract: A method for fabricating an electrical test apparatus electrical probe tip first provides a probe tip substrate having a topographic surface. A high density plasma chemical vapor deposition (HDP-CVD) deposited mandrel layer is then formed upon the topographic surface. It has a series of pointed tips formed over a series of topographic features within the topographic surface. Finally, a conductor probe tip layer is formed conformally upon the high density plasma chemical vapor deposition (HDP-CVD) deposited mandrel layer and replicating the series of pointed tips. Due to the series of pointed tips and the series of replicated pointed tips, a microelectronic fabrication when tested with the electrical test apparatus electrical probe tip is tested with enhanced accuracy.
    Type: Grant
    Filed: May 9, 2002
    Date of Patent: June 21, 2005
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Nai-Cheng Lu, Yu-Ting Liao, Fu-Sung Liu
  • Patent number: 6727719
    Abstract: An apparatus and method for testing the electrical characteristics of a semiconductor wafer, including integrated circuit components thereof. An outer layer surrounds an inside needle, such that the outer layer comprises a hard material, which can penetrate through a semiconductor layer to permit subsequent testing of at least one semiconductor integrated circuit component located below the semiconductor layer. The inside needle may be adapted to electrically contact one or more electrical semiconductor circuit components located below the semiconductor layer. The inside needle generally comprises a prober, while the outer layer generally comprises a piercer. The outer layer may be configured from a hard material, such as diamond or carborundum. The inside needle and the outer layer together form a concentric double layer structure prober. The outer layer generally comprises a sheath formed from a hard dielectric material, such that the sheath comprises a piercer.
    Type: Grant
    Filed: January 11, 2002
    Date of Patent: April 27, 2004
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Ting Liao, Fu-Sung Liu
  • Publication number: 20030210065
    Abstract: Within a method for fabricating an electrical test apparatus electrical probe tip, there first provided a probe tip substrate comprising a topographic surface. There is then formed upon the topographic surface a high density plasma chemical vapor deposition (HDP-CVD) deposited mandrel layer having formed therein a series of pointed tips formed over a series of topographic features within the topographic surface. Finally, there is formed conformally upon the high density plasma chemical vapor deposition (HDP-CVD) deposited mandrel layer and replicating the series of pointed tips a conductor probe tip layer. Due to the series of pointed tips and the series of replicated pointed tips, a microelectronic fabrication when tested with the electrical test apparatus electrical probe tip is tested with enhanced accuracy.
    Type: Application
    Filed: May 9, 2002
    Publication date: November 13, 2003
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Nai-Cheng Lu, Yu-Ting Liao, Fu-Sung Liu
  • Publication number: 20030132772
    Abstract: An apparatus and method for testing the electrical characteristics of a semiconductor wafer, including integrated circuit components thereof. An outer layer surrounds an inside needle, such that the outer layer comprises a hard material, which can penetrate through a semiconductor layer to permit subsequent testing of at least one semiconductor integrated circuit component located below the semiconductor layer. The inside needle may be adapted to electrically contact one or more electrical semiconductor circuit components located below the semiconductor layer. The inside needle generally comprises a prober, while the outer layer generally comprises a piercer. The outer layer may be configured from a hard material, such as diamond or carborundum. The inside needle and the outer layer together form a concentric double layer structure prober. The outer layer generally comprises a sheath formed from a hard dielectric material, such that the sheath comprises a piercer.
    Type: Application
    Filed: January 11, 2002
    Publication date: July 17, 2003
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Ting Liao, Fu-Sung Liu
  • Patent number: D834085
    Type: Grant
    Filed: June 15, 2017
    Date of Patent: November 20, 2018
    Assignee: ACTRON TECHNOLOGY CORPORATION
    Inventors: San-Ming Lu, Yu-Ting Liao