Abstract: A laser radar device includes a light source module, a collimating module, an optical phase-controlled array, a processing module, and a receiving module. The collimating module collimates the laser beam emitted by the light source module. The optical phase-controlled array deflects the collimated laser beam and reflects the deflected laser beam for making the reflected laser beam to illuminate at a target object. The receiving module receives the laser beam reflected by the target object and converts the received laser beam into electric signals. The processing module calculate a distance between the laser radar device and the target object based on the received electric signals. An accuracy of calculating the distance between the laser radar device and the target object is improved.

Abstract: A method for fabricating an electrical test apparatus electrical probe tip first provides a probe tip substrate having a topographic surface. A high density plasma chemical vapor deposition (HDP-CVD) deposited mandrel layer is then formed upon the topographic surface. It has a series of pointed tips formed over a series of topographic features within the topographic surface. Finally, a conductor probe tip layer is formed conformally upon the high density plasma chemical vapor deposition (HDP-CVD) deposited mandrel layer and replicating the series of pointed tips. Due to the series of pointed tips and the series of replicated pointed tips, a microelectronic fabrication when tested with the electrical test apparatus electrical probe tip is tested with enhanced accuracy.

Abstract: An apparatus and method for testing the electrical characteristics of a semiconductor wafer, including integrated circuit components thereof. An outer layer surrounds an inside needle, such that the outer layer comprises a hard material, which can penetrate through a semiconductor layer to permit subsequent testing of at least one semiconductor integrated circuit component located below the semiconductor layer. The inside needle may be adapted to electrically contact one or more electrical semiconductor circuit components located below the semiconductor layer. The inside needle generally comprises a prober, while the outer layer generally comprises a piercer. The outer layer may be configured from a hard material, such as diamond or carborundum. The inside needle and the outer layer together form a concentric double layer structure prober. The outer layer generally comprises a sheath formed from a hard dielectric material, such that the sheath comprises a piercer.

Abstract: Within a method for fabricating an electrical test apparatus electrical probe tip, there first provided a probe tip substrate comprising a topographic surface. There is then formed upon the topographic surface a high density plasma chemical vapor deposition (HDP-CVD) deposited mandrel layer having formed therein a series of pointed tips formed over a series of topographic features within the topographic surface. Finally, there is formed conformally upon the high density plasma chemical vapor deposition (HDP-CVD) deposited mandrel layer and replicating the series of pointed tips a conductor probe tip layer. Due to the series of pointed tips and the series of replicated pointed tips, a microelectronic fabrication when tested with the electrical test apparatus electrical probe tip is tested with enhanced accuracy.

Abstract: An apparatus and method for testing the electrical characteristics of a semiconductor wafer, including integrated circuit components thereof. An outer layer surrounds an inside needle, such that the outer layer comprises a hard material, which can penetrate through a semiconductor layer to permit subsequent testing of at least one semiconductor integrated circuit component located below the semiconductor layer. The inside needle may be adapted to electrically contact one or more electrical semiconductor circuit components located below the semiconductor layer. The inside needle generally comprises a prober, while the outer layer generally comprises a piercer. The outer layer may be configured from a hard material, such as diamond or carborundum. The inside needle and the outer layer together form a concentric double layer structure prober. The outer layer generally comprises a sheath formed from a hard dielectric material, such that the sheath comprises a piercer.