Abstract: A method and a system for manufacturing a semiconductor package structure are provided. The method includes: (a) providing a package body including at least one semiconductor device encapsulated in an encapsulant; (b) providing a flattening force to the package body; (c) thinning the package body after (b); (d) attaching a film to the package body; and (e) releasing the flattening force after (d).

Abstract: Disclosed herein is a method for determining whether a subject has or is at risk of developing colorectal cancer with an ex vivo biological sample isolated from the subject. The method comprises: determining the levels of at least two target proteins with the aid of mass spectrometry, in which the at least two target proteins are selected from the group consisting of ADAM10, CD59, and TSPAN9; and assessing whether the subject has or is at risk of developing the colorectal cancer based on the levels of the at least two target proteins. The present method may serve as a potential means for diagnosing and predicting the incidence of colorectal cancer, and the subject in need thereof could receive a suitable therapeutic regimen in time in accordance with the diagnostic results produced by the present method.

Abstract: A semiconductor package structure includes a semiconductor device with an active surface, a conductive pillar on the conductive pad, an adhesion strengthening layer, and an encapsulant in contact with the adhesion strengthening layer. The conductive pillar has a side surface and a top surface. The adhesion strengthening layer is conformally disposed on the side surface of the conductive pillar and the active surface of the semiconductor device.

Abstract: A semiconductor package structure includes a semiconductor device with an active surface, a conductive pillar on the conductive pad, an adhesion strengthening layer, and an encapsulant in contact with the adhesion strengthening layer. The conductive pillar has a side surface and a top surface. The adhesion strengthening layer is conformally disposed on the side surface of the conductive pillar and the active surface of the semiconductor device.

Abstract: A method and a system for manufacturing a semiconductor package structure are provided. The method includes: (a) providing a package body including at least one semiconductor device encapsulated in an encapsulant; (b) providing a flattening force to the package body; (c) thinning the package body after (b); (d) attaching a film to the package body; and (e) releasing the flattening force after (d).

Abstract: A method and a system for manufacturing a semiconductor package structure are provided. The method includes: (a) providing a package body including at least one semiconductor device encapsulated in an encapsulant; (b) providing a flattening force to the package body; (c) thinning the package body after (b); (d) attaching a film to the package body; and (e) releasing the flattening force after (d).

Abstract: A method and a system for manufacturing a semiconductor package structure are provided. The method includes: (a) providing a package body including at least one semiconductor device encapsulated in an encapsulant; (b) providing a flattening force to the package body; (c) thinning the package body after (b); (d) attaching a film to the package body; and (e) releasing the flattening force after (d).

Abstract: A semiconductor package structure includes a semiconductor device with an active surface, a conductive pillar on the conductive pad, an adhesion strengthening layer, and an encapsulant in contact with the adhesion strengthening layer. The conductive pillar has a side surface and a top surface. The adhesion strengthening layer is conformally disposed on the side surface of the conductive pillar and the active surface of the semiconductor device.

Abstract: A semiconductor package structure includes a semiconductor device with an active surface, a conductive pillar on the conductive pad, an adhesion strengthening layer, and an encapsulant in contact with the adhesion strengthening layer. The conductive pillar has a side surface and a top surface. The adhesion strengthening layer is conformally disposed on the side surface of the conductive pillar and the active surface of the semiconductor device.

Abstract: A semiconductor package structure includes a wiring structure, a semiconductor module, a protection layer and a plurality of outer conductive vias. The wiring structure includes at least one dielectric layer and at least one redistribution layer. The semiconductor module is electrically connected to the wiring structure. The semiconductor module has a first surface, a second surface opposite to the first surface and a lateral surface extending between the first surface and the second surface. The protection layer covers the lateral surface of the semiconductor module and a surface of the wiring structure. The outer conductive vias surround the lateral surface of the semiconductor module, electrically connect to the wiring structure, and extend through a dielectric layer of the wiring structure and the protection layer.

Abstract: A semiconductor package structure includes a semiconductor device with an active surface, a conductive pillar on the conductive pad, an adhesion strengthening layer, and an encapsulant in contact with the adhesion strengthening layer. The conductive pillar has a side surface and a top surface. The adhesion strengthening layer is conformally disposed on the side surface of the conductive pillar and the active surface of the semiconductor device.

Abstract: A method for manufacturing a semiconductor device package includes: (1) providing a first encapsulation layer; (2) disposing an adhesive layer on the first encapsulation layer; (3) disposing a first die on the adhesive layer; and (4) forming a second encapsulation layer covering the first die, the adhesive layer, and the first encapsulation layer.

Abstract: A semiconductor package structure includes a wiring structure, a semiconductor module, a protection layer and a plurality of outer conductive vias. The wiring structure includes at least one dielectric layer and at least one redistribution layer. The semiconductor module is electrically connected to the wiring structure. The semiconductor module has a first surface, a second surface opposite to the first surface and a lateral surface extending between the first surface and the second surface. The protection layer covers the lateral surface of the semiconductor module and a surface of the wiring structure. The outer conductive vias surround the lateral surface of the semiconductor module, electrically connect to the wiring structure, and extend through a dielectric layer of the wiring structure and the protection layer.

Abstract: A laser preheating control method is applied to a laser preheating control device. When a cutter processes a workpiece along a process path, a laser source of the device is provided to output a laser beam to the workpiece for selectively forming a laser spot on the workpiece surface. And according to a movement direction of the cutter, a laser controller of the device is provided to form the laser spot only on a preheating region of the workpiece, where in front of the cutter in the process path, for preheating the workpiece in the preheating region. As a result, the laser spot will not repeatedly heat the workpiece behind the cutter in the process path, and the qualitative change of the workpiece caused by repeating heating is preventable.

Abstract: A method for manufacturing a semiconductor device package includes: (1) providing a first encapsulation layer; (2) disposing an adhesive layer on the first encapsulation layer; (3) disposing a first die on the adhesive layer; and (4) forming a second encapsulation layer covering the first die, the adhesive layer, and the first encapsulation layer.

Abstract: A laser preheating control method is applied to a laser preheating control device. When a cutter processes a workpiece along a process path, a laser source of the device is provided to output a laser beam to the workpiece for selectively forming a laser spot on the workpiece surface. And according to a movement direction of the cutter, a laser controller of the device is provided to form the laser spot only on a preheating region of the workpiece, where in front of the cutter in the process path, for preheating the workpiece in the preheating region. As a result, the laser spot will not repeatedly heat the workpiece behind the cutter in the process path, and the qualitative change of the workpiece caused by repeating heating is preventable.

Abstract: A semiconductor device package comprises an adhesive layer, a die on the adhesive layer, a first encapsulation layer encapsulating the die and the adhesive layer, and a second encapsulation layer adjacent to the first encapsulation layer and the adhesive layer. The second encapsulation layer has a first surface and a second surface different from the first surface. A contact angle of the first surface of the second encapsulation layer is different from a contact angle of the second surface of the second encapsulation layer.

Abstract: A laser process device includes a processing machinery for processing a workpiece, a laser source for emitting a laser beam to the workpiece and a modulating lens group. The modulating lens group can selectively modulate the laser beam for laser processing the workpiece respectively, like pre-heating, forming process or post treatment, so the modulating lens group can improve process efficiency of the processing machinery.

Abstract: A semiconductor device package comprises an adhesive layer, a die on the adhesive layer, a first encapsulation layer encapsulating the die and the adhesive layer, and a second encapsulation layer adjacent to the first encapsulation layer and the adhesive layer. The second encapsulation layer has a first surface and a second surface different from the first surface. A contact angle of the first surface of the second encapsulation layer is different from a contact angle of the second surface of the second encapsulation layer.