Abstract: A semiconductor integrated circuit including: a substrate of a first conductivity type; a buried insulating film provided on the substrate; an active layer of the first conductivity type provided on the buried insulating film; a first impurity region of a second conductivity type formed within the active layer; an electric field relaxation layer of the second conductivity type formed within the active layer and surrounding the first impurity region; a second impurity region of the first conductivity type formed within the active layer and surrounding the electric field relaxation layer; and a groove formed surrounding the second impurity region and reaching the buried insulating film.

Abstract: An automatic analysis device has a plurality of types of photometers having different quantitative ranges, and an analysis control unit for quantifying the desired component in specimens based on measurement values of one or more photometers selected from among the plurality of types of photometers. The analysis control unit: sets a switching region in an overlap region of respective quantitative ranges of the plurality of types of photometers, said switching region having a greater width than does the variation in quantitative values of the desired component based on the measurement values of photometers having the same specimen; compares the quantitative value of a quantitative range portion that corresponds to the switching region and the quantitative values of the desired component based on the measurement values of the photometers; and selects a photometer to be used in quantitative output of the desired component from among the plurality of types of photometers.

Abstract: A semiconductor device includes a first electrode, a first semiconductor layer of a first conductivity type located on the first electrode, a second semiconductor layer of a second conductivity type located on a portion of the first semiconductor layer, a metal layer located on the first and second semiconductor layers, a second electrode located on the metal layer, a bonding member connected to an upper surface of the second electrode, and a conductive member located between the second semiconductor layer and the metal layer. The metal layer has a Schottky junction with the first semiconductor layer. The conductive member is made of a different material from the metal layer. An area ratio of the conductive member in a region directly under the bonding member is higher than an area ratio of the conductive member in a region other than the region directly under the bonding member.

Abstract: [Problem] To provide a rotor unit that may effectively prevent detachment of a magnet with a holder while absorbing dimensional errors of a rotor main body and the magnet. [Solution] In the rotor unit according to the present invention, the holder mountable on the rotor main body prevents the magnet from being detached from the rotor main body. The holder includes an elastically deformable insertion arm extending from a flat-plate like holder main body, a hook portion provided on a free end side of the insertion arm, an elastically deformable magnet pressing arm extending from the holder main body, and a magnet pressing portion provided on a free end side of the magnet pressing arm. The rotor main body includes a hook hole into which the insertion arm is inserted, and the hook hole is provided with a locking portion in which the hook portion is lockable.