Patents by Inventor Yuto Ootsuki
Yuto Ootsuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8231735Abstract: The present invention is directed to a CMP polishing slurry comprising cerium oxide particles, an organic compound having an acetylene bond (triple bond between carbon and carbon) and water, and a method for polishing a substrate which comprises a step of polishing a film to be polished of the substrate with the polishing slurry. In a CMP (chemical mechanical polishing) technique for flattening inter layer dielectrics, insulating films for shallow trench isolation and the like in a manufacturing process of semiconductor devices, the present invention enables the effective and high-speed polishing.Type: GrantFiled: September 28, 2007Date of Patent: July 31, 2012Assignee: Hitachi Chemical Co., Ltd.Inventors: Kouji Haga, Yuto Ootsuki, Yasushi Kurata, Kazuhiro Enomoto
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Patent number: 8168541Abstract: The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and ?-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefore easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.Type: GrantFiled: October 12, 2010Date of Patent: May 1, 2012Assignee: Hitachi Chemical Co., Ltd.Inventors: Masato Fukasawa, Masato Yoshida, Naoyuki Koyama, Yuto Ootsuki, Chiaki Yamagishi, Kazuhiro Enomoto, Kouji Haga, Yasushi Kurata
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Publication number: 20110028073Abstract: The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and ?-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.Type: ApplicationFiled: October 12, 2010Publication date: February 3, 2011Applicant: HITACHI CHEMICAL CO., LTD.Inventors: Masato Fukasawa, Masato Yoshida, Naoyuki Koyama, Yuto Ootsuki, Chiaki Yamagishi, Kazuhiro Enomoto, Kouji Haga, Yasushi Kurata
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Patent number: 7838482Abstract: The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and ?-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.Type: GrantFiled: January 30, 2004Date of Patent: November 23, 2010Assignee: Hitachi Chemical Co. Ltd.Inventors: Masato Fukasawa, Masato Yoshida, Naoyuki Koyama, Yuto Ootsuki, Chiaki Yamagishi, Kazuhiro Enomoto, Kouji Haga, Yasushi Kurata
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Patent number: 7837800Abstract: The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and ?-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.Type: GrantFiled: April 29, 2008Date of Patent: November 23, 2010Assignee: Hitachi Chemical Co., Ltd.Inventors: Masato Fukasawa, Masato Yoshida, Naoyuki Koyama, Yuto Ootsuki, Chiaki Yamagishi, Kazuhiro Enomoto, Kouji Haga, Yasushi Kurata
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Publication number: 20080214093Abstract: The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and ?-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.Type: ApplicationFiled: April 29, 2008Publication date: September 4, 2008Applicant: Hitachi Chemical Co., Ltd.Inventors: Masato Fukasawa, Masato Yoshida, Naoyuki Koyama, Yuto Ootsuki, Chiaki Yamagishi, Kazuhiro Enomoto, Kouji Haga, Yasushi Kurata
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Publication number: 20080176982Abstract: The present invention is directed to a CMP polishing slurry comprising cerium oxide particles, an organic compound having an acetylene bond (triple bond between carbon and carbon) and water, and a method for polishing a substrate which comprises a step of polishing a film to be polished of the substrate with the polishing slurry. In a CMP (chemical mechanical polishing) technique for flattening inter layer dielectrics, insulating films for shallow trench isolation and the like in a manufacturing process of semiconductor devices, the present invention enables the effective and high-speed polishing.Type: ApplicationFiled: September 28, 2007Publication date: July 24, 2008Applicant: HITACHI CEHMICAL CO., LTD.Inventors: Kouji Haga, Yuto Ootsuki, Yasushi Kurata, Kazuhiro Enomoto
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Patent number: 7311855Abstract: The present invention is directed to a CMP polishing slurry comprising cerium oxide particles, an organic compound having an acetylene bond (triple bond between carbon and carbon) and water, and a method for polishing a substrate which comprises a step of polishing a film to be polished of the substrate with the polishing slurry. In a CMP (chemical mechanical polishing) technique for flattening inter layer dielectrics, insulating films for shallow trench isolation and the like in a manufacturing process of semiconductor devices, the present invention enables the effective and high-speed polishing.Type: GrantFiled: August 6, 2003Date of Patent: December 25, 2007Assignee: Hitachi Chemical Co., Ltd.Inventors: Kouji Haga, Yuto Ootsuki, Yasushi Kurata, Kazuhiro Enomoto
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Publication number: 20060148667Abstract: The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and ?-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.Type: ApplicationFiled: January 30, 2004Publication date: July 6, 2006Applicant: Hitachi Chemical Co., Ltd.Inventors: Masato Fukasawa, Masato Yoshida, Naoyuki Koyama, Yuto Ootsuki, Chiaki Yamagishi, Kazuhiro Enomoto, Kouji Haga, Yasushi Kurata
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Publication number: 20060124591Abstract: The present invention is directed to a CMP polishing slurry comprising cerium oxide particles, an organic compound having an acetylene bond (triple bond between carbon and carbon) and water, and a method for polishing a substrate which comprises a step of polishing a film to be polished of the substrate with the polishing slurry. In a CMP (chemical mechanical polishing) technique for flattening inter layer dielectrics, insulating films for shallow trench isolation and the like in a manufacturing process of semiconductor devices, the present invention enables the effective and high-speed polishing.Type: ApplicationFiled: August 6, 2003Publication date: June 15, 2006Inventors: Kouji Haga, Yuto Ootsuki, Yasushi Kurata, Kazuhiro Enomoto