Patents by Inventor Yuto Toshimori

Yuto Toshimori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ANTIMICROBIAL MEMBER
    Publication number: 20230115585
    Abstract: An antimicrobial member includes a substrate, an underlayer deposited on the substrate, and a copper layer formed on a surface of the underlayer which is on a side opposite to the substrate and arranged as an outermost layer, in which the copper layer is formed of copper or a copper alloy, the underlayer is formed of a metal oxide, and the substrate is formed of a flexible resin material. It is preferable that no cracking is confirmed after carrying out a bending test 100 times under a condition where a radius of curvature is 6 mm.
    Type: Application
    Filed: March 26, 2021
    Publication date: April 13, 2023
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Yuki Ito, Yoshiyuki Nagatomo, Yuto Toshimori
  • AG ALLOY SPUTTERING TARGET, AND AG ALLOY FILM
    Publication number: 20220112592
    Abstract: An Ag alloy sputtering target includes Mg in a range of 1.0 atom % or more and 5.0 atom % or less, Au in a range of 0.10 atom % or more and 5.00 atom % or less, and a balance consisting of Ag and inevitable impurities. The Ag alloy sputtering target may further include Ca in a range of 0.01 atom % or more and 0.15 atom % or less. In addition, the oxygen content may be 0.010% by mass or less.
    Type: Application
    Filed: January 23, 2020
    Publication date: April 14, 2022
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Yuto Toshimori, Sohei Nonaka
  • Ag ALLOY SPUTTERING TARGET, AND Ag ALLOY FILM
    Publication number: 20220106678
    Abstract: An Ag alloy sputtering target includes Mg in a range of more than 1.0 atom % and 5.0 atom % or less, Pd in a range of more than 0.10 atom % and 2.00 atom % or less, and a balance consisting of Ag and inevitable impurities. The Ag alloy sputtering target may further include 0.10 atom % or more of Au, and a total content of Au and Pd may be set to 5.00 atom % or less. The Ag alloy sputtering target may further include Ca in a range of 0.01 atom % or more and 0.15 atom % or less. In addition, the oxygen content may be 0.010% by mass or less.
    Type: Application
    Filed: January 24, 2020
    Publication date: April 7, 2022
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Yuto Toshimori, Sohei Nonaka
  • MULTILAYER FILM, AND AG ALLOY SPUTTERING TARGET
    Publication number: 20210310113
    Abstract: A multilayer film includes: an Ag alloy film; and a transparent dielectric film laminated on both surfaces of the Ag alloy film, and in the Ag alloy film, at least one of Sn or Ge is contained in a range of 0.5 atom % to 8.0 atom % in total, a total content of Na, K, Ba, and Te is 50 ppm by mass or less, a carbon content is 50 ppm by mass or less, and a remainder contains Ag and unavoidable impurities.
    Type: Application
    Filed: October 3, 2018
    Publication date: October 7, 2021
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Yuto Toshimori, Hideharu Matsuzaki, Ichiro Shiono
  • Multilayer reflection electrode film, multilayer reflection electrode pattern, and method of forming multilayer reflection electrode pattern
    Patent number: 10971695
    Abstract: A multilayer reflection electrode film includes a Ag film that is formed of Ag or an Ag alloy; and a transparent conductive oxide film that is disposed on the Ag film, in which the transparent conductive oxide film is formed of an oxide that includes Zn and Ga and further includes one element or two or more elements selected from the group consisting of Sn, Y, and Ti.
    Type: Grant
    Filed: March 22, 2017
    Date of Patent: April 6, 2021
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Hiromi Nakazawa, Hiroshi Ishii, Yuto Toshimori, Atsushi Saito, Yujiro Hayashi
  • Ag alloy sputtering target and Ag alloy film manufacturing method
    Patent number: 10577687
    Abstract: A sputtering target, which has a composition comprising: one or more elements selected from Cu, Sn, Sb, Mg, In, and Ti in a range of 0.1 atomic % or more and 15.0 atomic % or less in total; S in a range of 0.5 atomic ppm or more and 200 atomic ppm or less; and a Ag balance including inevitable impurities, is provided.
    Type: Grant
    Filed: February 18, 2016
    Date of Patent: March 3, 2020
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Yuto Toshimori, Shozo Komiyama, Ichiro Shiono
  • MULTILAYER TRANSPARENT CONDUCTIVE FILM, MULTILAYER WIRING FILM, AND METHOD OF FORMING MULTILAYER WIRING FILM
    Publication number: 20190105872
    Abstract: A multilayer transparent conductive film is provided, including: a Ag film that is formed of Ag or a Ag alloy; and a transparent conductive oxide film that is disposed on two opposite surfaces of the Ag film, in which the transparent conductive oxide film is formed of an oxide including Zn, Ga, and Ti.
    Type: Application
    Filed: March 22, 2017
    Publication date: April 11, 2019
    Inventors: Hiromi Nakazawa, Hiroshi Ishii, Yuto Toshimori, Atsushi Saito, Yujiro Hayashi
  • MULTILAYER REFLECTION ELECTRODE FILM, MULTILAYER REFLECTION ELECTRODE PATTERN, AND METHOD OF FORMING MULTILAYER REFLECTION ELECTRODE PATTERN
    Publication number: 20190103580
    Abstract: A multilayer reflection electrode film includes a Ag film that is formed of Ag or an Ag alloy; and a transparent conductive oxide film that is disposed on the Ag film, in which the transparent conductive oxide film is formed of an oxide that includes Zn and Ga and further includes one element or two or more elements selected from the group consisting of Sn, Y, and Ti.
    Type: Application
    Filed: March 22, 2017
    Publication date: April 4, 2019
    Inventors: Hiromi Nakazawa, Hiroshi Ishii, Yuto Toshimori, Atsushi Saito, Yujiro Hayashi
  • Ag alloy sputtering target, method of manufacturing Ag alloy sputtering target, Ag alloy film, and method of forming Ag alloy film
    Patent number: 10060025
    Abstract: An Ag alloy sputtering target of the present invention includes, as a composition, 0.1 at % to 3.0 at % of Sn, 1.0 at % to 10.0 at % of Cu, and a balance of Ag and inevitable impurities. In addition, an Ag alloy film of the present invention includes, as a composition, 0.1 at % to 3.0 at % of Sn, 1.0 at % to 10.0 at % of Cu, and a balance of Ag and inevitable impurities.
    Type: Grant
    Filed: September 15, 2015
    Date of Patent: August 28, 2018
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Yuto Toshimori, Sohei Nonaka, Hideharu Matsuzaki
  • Ag ALLOY SPUTTERING TARGET, METHOD OF MANUFACTURING Ag ALLOY SPUTTERING TARGET, Ag ALLOY FILM, AND METHOD OF FORMING Ag ALLOY FILM
    Publication number: 20170233863
    Abstract: An Ag alloy sputtering target of the present invention includes, as a composition, 0.1 at % to 3.0 at % of Sn, 1.0 at % to 10.0 at % of Cu, and a balance of Ag and inevitable impurities. In addition, an Ag alloy film of the present invention includes, as a composition, 0.1 at % to 3.0 at % of Sn, 1.0 at % to 10.0 at % of Cu, and a balance of Ag and inevitable impurities.
    Type: Application
    Filed: September 15, 2015
    Publication date: August 17, 2017
    Inventors: Yuto Toshimori, Sohei Nonaka, Hideharu Matsuzaki
  • Ag ALLOY SPUTTERING TARGET AND Ag ALLOY FILM MANUFACTURING METHOD
    Publication number: 20170191154
    Abstract: A sputtering target, which has a composition comprising: one or more elements selected from Cu, Sn, Sb, Mg, In, and Ti in a range of 0.1 atomic % or more and 15.0 atomic % or less in total; S in a range of 0.5 atomic ppm or more and 200 atomic ppm or less; and a Ag balance including inevitable impurities, is provided.
    Type: Application
    Filed: February 18, 2016
    Publication date: July 6, 2017
    Inventors: Yuto Toshimori, Shozo Komiyama, Ichiro Shiono