Abstract: An IIS system that performs control related to intermittent stopping of engine operation by idling stop control is applied to an internal combustion engine including a VVT mechanism that makes the valve timing of an engine valve variable and has an intermediate lock mechanism that mechanically locks the valve timing at an intermediate lock position between a most retarded position and a most advanced position. The IIS system is configured to inhibit the engine operation from being intermittently stopped at the occurrence of a failure of the VVT mechanism to avoid the internal combustion engine from being prevented from being restarted after the intermittent stop depending on the occurrence of the failure of the VVT mechanism.

Abstract: An IIS system that performs control related to intermittent stopping of engine operation by idling stop control is applied to an internal combustion engine including a VVT mechanism that makes the valve timing of an engine valve variable and has an intermediate lock mechanism that mechanically locks the valve timing at an intermediate lock position between a most retarded position and a most advanced position. The IIS system is configured to inhibit the engine operation from being intermittently stopped at the occurrence of a failure of the VVT mechanism to avoid the internal combustion engine from being prevented from being restarted after the intermittent stop depending on the occurrence of the failure of the VVT mechanism.

Abstract: In a method for manufacturing a bipolar transistor, a first insulating layer, a first polycrystalline silicon layer of a second conductivity type, and a second insulating layer are sequentially formed on a semiconductor substrate of a first conductivity type. Then, the second insulating layer and the first polycrystalline silicon layer are patterned to form an opening therein. Then, the first insulating layer is over etched by using the second insulating layer and the first polycrystalline silicon layer as a mask. Then, a second polycrystalline silicon layer is formed on the entire surface. Then, an oxidizing process is performed upon the second polycrystalline silicon layer except for a part of the second polycrystalline silicon layer under the first polycrystalline silicon layer, and the oxidized part of the second polycrystalline silicon layer is removed by a wet etching process. Then, impurities of the second conductivity type are implanted into the semiconductor substrate to form a base region.

Abstract: The present invention provides a method of forming an opening an insulation layer over a substrate. A photo-resist film with at least an opening is formed over a substrate. A first spacer layer is selectively formed within the opening of the photo-resist film. The photo-resist film is removed to have the first spacer layer remain over the substrate. An insulation layer is formed which extends over the first spacer layer and the substrate so that the insulation layer over the first spacer layer is higher in level than the insulation layer over the substrate. A second spacer layer is formed which extends over the insulation layer over the substrate so that the insulation layer over the first spacer layer is shown. Both the insulation layer over the first spacer layer and the second spacer layer are selectively removed so that the insulation layer over the substrate and the first spacer layer are shown.