Patents by Inventor Yuugo Goto

Yuugo Goto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10957723
    Abstract: To provide a semiconductor device in which a layer to be peeled is attached to a base having a curved surface, and a method of manufacturing the same, and more particularly, a display having a curved surface, and more specifically a light-emitting device having a light emitting element attached to a base with a curved surface. A layer to be peeled, which contains a light emitting element furnished to a substrate using a laminate of a first material layer which is a metallic layer or nitride layer, and a second material layer which is an oxide layer, is transferred onto a film, and then the film and the layer to be peeled are curved, to thereby produce a display having a curved surface.
    Type: Grant
    Filed: April 14, 2020
    Date of Patent: March 23, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toru Takayama, Junya Maruyama, Yuugo Goto, Hideaki Kuwabara, Shunpei Yamazaki
  • Publication number: 20200312891
    Abstract: To provide a semiconductor device in which a layer to be peeled is attached to a base having a curved surface, and a method of manufacturing the same, and more particularly, a display having a curved surface, and more specifically a light-emitting device having a light emitting element attached to a base with a curved surface. A layer to be peeled, which contains a light emitting element furnished to a substrate using a laminate of a first material layer which is a metallic layer or nitride layer, and a second material layer which is an oxide layer, is transferred onto a film, and then the film and the layer to be peeled are curved, to thereby produce a display having a curved surface.
    Type: Application
    Filed: April 14, 2020
    Publication date: October 1, 2020
    Inventors: Toru TAKAYAMA, Junya MARUYAMA, Yuugo GOTO, Hideaki KUWABARA, Shunpei YAMAZAKI
  • Publication number: 20200294848
    Abstract: A semiconductor device having a semiconductor element (a thin film transistor, a thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device. In the present invention, the element is not formed on a plastic film. Instead, a flat board such as a substrate is used as a form, the space between the substrate (third substrate (17)) and a layer including the element (peeled layer (13)) is filled with coagulant (typically an adhesive) that serves as a second bonding member (16), and the substrate used as a form (third substrate (17)) is peeled off after the adhesive is coagulated to hold the layer including the element (peeled layer (13)) by the coagulated adhesive (second bonding member (16)) alone. In this way, the present invention achieves thinning of the film and reduction in weight.
    Type: Application
    Filed: March 27, 2020
    Publication date: September 17, 2020
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Junya Maruyama, Toru Takayama, Yuugo Goto
  • Publication number: 20200249524
    Abstract: To provide a method of manufacturing an optical film formed on a plastic substrate. There is provided a method of manufacturing an optical film including the steps of laminating a separation layer and an optical filter on a first substrate, separating the optical filter from the first substrate, attaching the optical filter to a second substrate. Since the optical film manufactured according to the invention has flexibility, it can be provided on a portion or a display device having a curved surface. Further, the optical film is not processed at high temperatures, and hence, an optical film having high yield with high reliability can be formed. Furthermore, an optical film having an excellent impact resistance property can be formed.
    Type: Application
    Filed: April 22, 2020
    Publication date: August 6, 2020
    Inventors: Akio YAMASHITA, Yumiko OHNO, Yuugo GOTO
  • Publication number: 20200194821
    Abstract: In the case where a film, which has lower strength than a metal can, is used as an exterior body of a secondary battery, a current collector provided in a region surrounded by the exterior body, an active material layer provided on a surface of the current collector, or the like might be damaged when force is externally applied to the secondary battery. A secondary battery that is durable even when force is externally applied thereto is provided. A cushioning material is provided in a region surrounded by an exterior body of a secondary battery. Specifically, a cushioning material is provided on the periphery of a current collector such that a sealing portion of an exterior body (film) is located outside the cushioning material.
    Type: Application
    Filed: February 11, 2020
    Publication date: June 18, 2020
    Inventors: Minoru TAKAHASHI, Ryota TAJIMA, Takuya MIWA, Yuugo GOTO
  • Publication number: 20200185665
    Abstract: In the case where a film, which has lower strength than a metal can, is used as an exterior body of a secondary battery, a current collector provided in a region surrounded by the exterior body, an active material layer provided on a surface of the current collector, or the like might be damaged when force is externally applied to the secondary battery. A secondary battery which is resistant to external force is obtained. An opening is provided in a central portion of the secondary battery; and a terminal is formed in the opening. An outer edge of the secondary battery is fixed by thermocompression bonding. In addition, the central portion of the secondary battery is fixed by thermocompression bonding, so that the amount of bending is limited even when the outer edge portion of the secondary battery is bent.
    Type: Application
    Filed: February 6, 2020
    Publication date: June 11, 2020
    Inventors: Minoru TAKAHASHI, Yuugo GOTO, Yumiko YONEDA (formerly SAITO), Takuya MIWA, Ryota TAJIMA
  • Publication number: 20200176068
    Abstract: A semiconductor device in which a decrease in the yield by electrostatic destruction can be prevented is provided. A scan line driver circuit for supplying a signal for selecting a plurality of pixels to a scan line includes a shift register for generating the signal. One conductive film functioning as respective gate electrodes of a plurality of transistors in the shift register is divided into a plurality of conductive films. The divided conductive films are electrically connected to each other by a conductive film which is formed in a layer different from the divided conductive films are formed. The plurality of transistors includes a transistor on an output side of the shift register.
    Type: Application
    Filed: February 3, 2020
    Publication date: June 4, 2020
    Inventors: Masayuki SAKAKURA, Yuugo GOTO, Hiroyuki MIYAKE, Daisuke KUROSAKI
  • Patent number: 10634944
    Abstract: To provide a method of manufacturing an optical film formed on a plastic substrate. There is provided a method of manufacturing an optical film including the steps of laminating a separation layer and an optical filter on a first substrate, separating the optical filter from the first substrate, attaching the optical filter to a second substrate. Since the optical film manufactured according to the invention has flexibility, it can be provided on a portion or a display device having a curved surface. Further, the optical film is not processed at high temperatures, and hence, an optical film having high yield with high reliability can be formed. Furthermore, an optical film having an excellent impact resistance property can be formed.
    Type: Grant
    Filed: March 23, 2018
    Date of Patent: April 28, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Akio Yamashita, Yumiko Ohno, Yuugo Goto
  • Patent number: 10629637
    Abstract: To provide a semiconductor device in which a layer to be peeled is attached to a base having a curved surface, and a method of manufacturing the same, and more particularly, a display having a curved surface, and more specifically a light-emitting device having a light emitting element attached to a base with a curved surface. A layer to be peeled, which contains a light emitting element furnished to a substrate using a laminate of a first material layer which is a metallic layer or nitride layer, and a second material layer which is an oxide layer, is transferred onto a film, and then the film and the layer to be peeled are curved, to thereby produce a display having a curved surface.
    Type: Grant
    Filed: June 18, 2019
    Date of Patent: April 21, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toru Takayama, Junya Maruyama, Yuugo Goto, Hideaki Kuwabara, Shunpei Yamazaki
  • Patent number: 10607883
    Abstract: A semiconductor device having a semiconductor element (a thin film transistor, a thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device. In the present invention, the element is not formed on a plastic film. Instead, a flat board such as a substrate is used as a form, the space between the substrate (third substrate (17)) and a layer including the element (peeled layer (13)) is filled with coagulant (typically an adhesive) that serves as a second bonding member (16), and the substrate used as a form (third substrate (17)) is peeled off after the adhesive is coagulated to hold the layer including the element (peeled layer (13)) by the coagulated adhesive (second bonding member (16)) alone. In this way, the present invention achieves thinning of the film and reduction in weight.
    Type: Grant
    Filed: April 5, 2017
    Date of Patent: March 31, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Junya Maruyama, Toru Takayama, Yuugo Goto
  • Patent number: 10601066
    Abstract: In the case where a film, which has lower strength than a metal can, is used as an exterior body of a secondary battery, a current collector provided in a region surrounded by the exterior body, an active material layer provided on a surface of the current collector, or the like might be damaged when force is externally applied to the secondary battery. A secondary battery that is durable even when force is externally applied thereto is provided. A cushioning material is provided in a region surrounded by an exterior body of a secondary battery. Specifically, a cushioning material is provided on the periphery of a current collector such that a sealing portion of an exterior body (film) is located outside the cushioning material.
    Type: Grant
    Filed: May 12, 2015
    Date of Patent: March 24, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Minoru Takahashi, Ryota Tajima, Takuya Miwa, Yuugo Goto
  • Patent number: 10586954
    Abstract: In the case where a film, which has lower strength than a metal can, is used as an exterior body of a secondary battery, a current collector provided in a region surrounded by the exterior body, an active material layer provided on a surface of the current collector, or the like might be damaged when force is externally applied to the secondary battery. A secondary battery which is resistant to external force is obtained. An opening is provided in a central portion of the secondary battery, and a terminal is formed in the opening. An outer edge of the secondary battery is fixed by thermocompression bonding. In addition, the central portion of the secondary battery is fixed by thermocompression bonding, so that the amount of bending is limited even when the outer edge portion of the secondary battery is bent.
    Type: Grant
    Filed: May 20, 2015
    Date of Patent: March 10, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Minoru Takahashi, Yuugo Goto, Yumiko Yoneda, Takuya Miwa, Ryota Tajima
  • Patent number: 10580508
    Abstract: A semiconductor device in which a decrease in the yield by electrostatic destruction can be prevented is provided. A scan line driver circuit for supplying a signal for selecting a plurality of pixels to a scan line includes a shift register for generating the signal. One conductive film functioning as respective gate electrodes of a plurality of transistors in the shift register is divided into a plurality of conductive films. The divided conductive films are electrically connected to each other by a conductive film which is formed in a layer different from the divided conductive films are formed. The plurality of transistors includes a transistor on an output side of the shift register.
    Type: Grant
    Filed: August 22, 2019
    Date of Patent: March 3, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masayuki Sakakura, Yuugo Goto, Hiroyuki Miyake, Daisuke Kurosaki
  • Publication number: 20190378585
    Abstract: A semiconductor device in which a decrease in the yield by electrostatic destruction can be prevented is provided. A scan line driver circuit for supplying a signal for selecting a plurality of pixels to a scan line includes a shift register for generating the signal. One conductive film functioning as respective gate electrodes of a plurality of transistors in the shift register is divided into a plurality of conductive films. The divided conductive films are electrically connected to each other by a conductive film which is formed in a layer different from the divided conductive films are formed. The plurality of transistors includes a transistor on an output side of the shift register.
    Type: Application
    Filed: August 22, 2019
    Publication date: December 12, 2019
    Inventors: Masayuki SAKAKURA, Yuugo GOTO, Hiroyuki MIYAKE, Daisuke KUROSAKI
  • Publication number: 20190371831
    Abstract: To provide a semiconductor device in which a layer to be peeled is attached to a base having a curved surface, and a method of manufacturing the same, and more particularly, a display having a curved surface, and more specifically a light-emitting device having a light emitting element attached to a base with a curved surface. A layer to be peeled, which contains a light emitting element furnished to a substrate using a laminate of a first material layer which is a metallic layer or nitride layer, and a second material layer which is an oxide layer, is transferred onto a film, and then the film and the layer to be peeled are curved, to thereby produce a display having a curved surface.
    Type: Application
    Filed: June 18, 2019
    Publication date: December 5, 2019
    Inventors: Toru TAKAYAMA, Junya MARUYAMA, Yuugo GOTO, Hideaki KUWABARA, Shunpei YAMAZAKI
  • Patent number: 10431318
    Abstract: A semiconductor device in which a decrease in the yield by electrostatic destruction can be prevented is provided. A scan line driver circuit for supplying a signal for selecting a plurality of pixels to a scan line includes a shift register for generating the signal. One conductive film functioning as respective gate electrodes of a plurality of transistors in the shift register is divided into a plurality of conductive films. The divided conductive films are electrically connected to each other by a conductive film which is formed in a layer different from the divided conductive films are formed. The plurality of transistors includes a transistor on an output side of the shift register.
    Type: Grant
    Filed: June 25, 2018
    Date of Patent: October 1, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masayuki Sakakura, Yuugo Goto, Hiroyuki Miyake, Daisuke Kurosaki
  • Patent number: 10325940
    Abstract: To provide a semiconductor device in which a layer to be peeled is attached to a base having a curved surface, and a method of manufacturing the same, and more particularly, a display having a curved surface, and more specifically a light-emitting device having a light emitting element attached to a base with a curved surface. A layer to be peeled, which contains a light emitting element furnished to a substrate using a laminate of a first material layer which is a metallic layer or nitride layer, and a second material layer which is an oxide layer, is transferred onto a film, and then the film and the layer to be peeled are curved, to thereby produce a display having a curved surface.
    Type: Grant
    Filed: November 10, 2016
    Date of Patent: June 18, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toru Takayama, Junya Maruyama, Yuugo Goto, Hideaki Kuwabara, Shunpei Yamazaki
  • Patent number: 10219395
    Abstract: To provide a power storage unit having a structure which is unlikely to break down by change in shape, such as bending. An electrode plate is covered with a sheet of an insulator which is folded in two. The sheet is preferably processed into a bag-like shape or an envelope-like shape by bonding overlapping portions of the sheet in the periphery of the electrode plate. The electrode plate and the sheet are fixed to an exterior body. In the case where the shape of the exterior body is changed by bending or the like, the electrode plate and the sheet can slide together in the exterior body. Thus, stress on the electrode plate due to bending can be relieved.
    Type: Grant
    Filed: November 27, 2014
    Date of Patent: February 26, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Ryota Tajima, Yuugo Goto, Yumiko Yoneda, Junya Goto, Takuya Miwa
  • Patent number: 10128402
    Abstract: To provide a method of manufacturing a display device having an excellent impact resistance property with high yield, in particular, a method of manufacturing a display device having an optical film that is formed using a plastic substrate. The method of manufacturing a display device includes the steps of: laminating a metal film, an oxide film, and an optical filter on a first substrate; separating the optical filter from the first substrate; attaching the optical filter to a second substrate; forming a layer including a pixel on a third substrate; and attaching the layer including the pixel to the optical filter.
    Type: Grant
    Filed: May 25, 2017
    Date of Patent: November 13, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Akio Yamashita, Yumiko Fukumoto, Yuugo Goto
  • Patent number: 10122010
    Abstract: An electronic device having a novel structure, specifically, an electronic device having a novel structure that can be changed into various appearances is provided. Specifically, after an active material layer is formed on one or both surfaces of a current collector, the active material layer in a bent region is partly removed. The removed region of the active material layer can be in a linear shape, a dot shape, or a matrix shape, for example. After the active material layer is formed on one or both surfaces of the current collector, laser processing for removing part of the active material layer in an irradiation region is performed using laser light or the like. On the region where the surface of the current collector is exposed, the active material layer is not provided, and this region is a region that does not function as a battery. Owing to this region, a secondary battery with a wide movable region can be achieved.
    Type: Grant
    Filed: June 26, 2015
    Date of Patent: November 6, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Ryota Tajima, Yuugo Goto, Yumiko Yoneda, Junya Goto, Takuya Miwa, Masaaki Hiroki