Abstract: The present invention makes clear and defines a congruent composition of a langasite-based oxide, and establishes a method of manufacturing a crystal by any desired composition of AE3ME1+a(Ga1?xAlx)3+bSi2+cO14 (AE is an alkaline-earth metal, ME is Nb or Ta, 0?x?1, ?0.5<a?0 or 0<a<0.5, ?0.5<b?0 or 0<b?0.5, and ?0.5<c?0 or 0<c<0.5, excluding a=b=c=0). This makes it possible to suppress the formation of an impurity, and improve the yield and crystal manufacturing rate. The raw material is a raw material mixture prepared by mixing an alkaline-earth metal or its carbonate or oxide, Nb or Ta or its oxide, Ga or its oxide, Al or its oxide, and Si or its oxide.

Abstract: To provide a vibrator made of a piezoelectric crystal having a larger electromechanical coupling coefficient and a more satisfactory frequency-temperature characteristic than those of quartz, a vibrating piece (101) is made of a Ca3Ta(Ga1-xAlx)3Si2O14 single crystal (0<x?1). In the single crystal, letting ? be a rotation angle from an X-Z plane about an X-axis serving as a rotation axis, 18x+17.5???24x+24.5 is set. In addition, the vibrating piece (101) is made of a Ca3Nb(Ga1-xAlx)3Si2O14 single crystal (0<x?1). In the single crystal of this arrangement, letting ? be a rotation angle from an X-Z plane about an X-axis serving as a rotation axis, 25x+23.083???32x+26.167 is set.

Abstract: To improve the Q value of a piezoelectric thin-film element in a state in which unnecessary vibration is suppressed, an acoustic reflection film (104) is affixed to a first electrode (102), a piezoelectric single-crystal substrate (101) is thinned by polishing from the other surface (101b) of the piezoelectric single-crystal substrate (101), such that the first electrode (102) and piezoelectric thin film (105) are piled on the piezoelectric single-crystal substrate (101). In this polishing, a pressure (polishing pressure) to the surface (101b) during polishing in an electrode formation region where the first electrode (102) is formed differs from that in a non-electrode formation region around the electrode formation region. Consequently, the electrode formation region of the piezoelectric thin film (105), where the first electrode (102) is formed, is made thinner than the non-electrode formation region around the electrode formation region.

Abstract: The present invention makes clear and defines a congruent composition of a langasite-based oxide, and establishes a method of manufacturing a crystal by any desired composition of AE3ME1+a(Ga1-xAlx)3+bSi2+cO14 (AE is an alkaline-earth metal, ME is Nb or Ta, 0?x?1, ?0.5<a?0 or 0<a<0.5, ?0.5<b?0 or 0<b?0.5, and ?0.5<c?0 or 0<c<0.5, excluding a=b=c=0). This makes it possible to suppress the formation of an impurity, and improve the yield and crystal manufacturing rate. The raw material is a raw material mixture prepared by mixing an alkaline-earth metal or its carbonate or oxide, Nb or Ta or its oxide, Ga or its oxide, Al or its oxide, and Si or its oxide.

Abstract: An illuminant has a short fluorescence lifetime, high transparency, and high light yield and a radiation detector uses the illuminant. The illuminant is appropriate for a radiation detector for detecting gamma-rays, X-rays, ?-rays, and neutron rays, and has high radiation resistance, a short fluorescence decay time and high emission intensity. The illuminant has a garnet structure using emission from the 4f5d level of Ce3+, and includes a garnet illuminant prepared by co-doping of at least one type of monovalent or divalent cation at a molar ratio of 7000 ppm or less with respect to all cations, to an illuminant having a garnet structure represented by general formula CexRE3?xM5+yO12+3y/2 (where 0.0001?x?0.3, 0?y?0.5 or 0?y??0.5, M is one type or two or more types selected from Al, Lu, Ga, and Sc, and RE is one type or two or more types selected from La, Pr, Gd, Tb, Yb, Y, and Lu).

Abstract: The present invention provides a metal wire rod composed of iridium or an iridium alloy, wherein the number of crystal grains on any cross-section in a longitudinal direction is 2 to 20 per 0.25 mm2, and the Vickers hardness at any part is 200 Hv or more and less than 400 Hv. The iridium wire rod is a material which is produced by a ?-PD method, and has low residual stress and which has a small change in the number of crystal grains and hardness even when heated to a temperature equal to or higher than a recrystallization temperature (1200° C. to 1500° C.). The metal wire rod of the present invention is excellent in oxidative consumption resistance under a high-temperature atmosphere, and mechanical properties.

Abstract: To provide a vibrator made of a piezoelectric crystal having a larger electromechanical coupling coefficient and a more satisfactory frequency-temperature characteristic than those of quartz, a vibrating piece (101) is made of a Ca3Ta(Ga1-xAlx)3Si2O14 single crystal (0<x?1). In the single crystal, letting ? be a rotation angle from an X-Z plane about an X-axis serving as a rotation axis, 18x+17.5???24x+24.5 is set. In addition, the vibrating piece (101) is made of a Ca3Nb(Ga1-xAlx)3Si2O14 single crystal (0<x?1). In the single crystal of this arrangement, letting ? be a rotation angle from an X-Z plane about an X-axis serving as a rotation axis, 25x+23.083???32x+26.167 is set.

Abstract: To improve the Q value of a piezoelectric thin-film element in a state in which unnecessary vibration is suppressed, an acoustic reflection film (104) is affixed to a first electrode (102), a piezoelectric single-crystal substrate (101) is thinned by polishing from the other surface (101b) of the piezoelectric single-crystal substrate (101), such that the first electrode (102) and piezoelectric thin film (105) are piled on the piezoelectric single-crystal substrate (101). In this polishing, a pressure (polishing pressure) to the surface (101b) during polishing in an electrode formation region where the first electrode (102) is formed differs from that in a non-electrode formation region around the electrode formation region. Consequently, the electrode formation region of the piezoelectric thin film (105), where the first electrode (102) is formed, is made thinner than the non-electrode formation region around the electrode formation region.

Abstract: A crystal material that is represented by a general formula (1): (RExA1-x-y-sByM?s)2+?(Si1-t,M?t)2+?O7+? (1), the crystal material having a pyrochlore type structure, being a nonstoichiometric composition, and being a congruent melting composition, wherein in Formula (1), A contains at least one or more selected from Gd, Y, La, Sc, Yb, and Lu; B contains at least one or more selected from La, Gd, Yb, Lu, Y, and Sc; 0.1?y<0.4; RE contains at least one or more selected from Ce, Pr, Nd, Eu, Tb, and Yb; 0<x<0.1; M? and M? contain at least one or more selected from Li, Na, K, Mg, Ca, Sr, Ba, Ti, Zr, Hf, Fe, Ta, and W; 0?s<0.01 and 0?t<0.01; and 0<|?|<0.3 and 0?|?|<0.3 and 0?|?|<0.5.

Abstract: A crystal material that is represented by a general formula (1): (RExA1-x-y-sByM?s)2+?(Si1-t?M?t)2+?O7+? (1), the crystal material having a pyrochlore type structure, being a nonstoichiometric composition, and being a congruent melting composition, wherein in Formula (1), A contains at least one or more selected from Gd, Y, La, Sc, Yb, and Lu; B contains at least one or more selected from La, Gd, Yb, Lu, Y, and Sc; 0.1?y<0.4; RE contains at least one or more selected from Ce, Pr, Nd, Eu, Tb, and Yb; 0<x<0.1; M? and M? contain at least one or more selected from Li, Na, K, Mg, Ca, Sr, Ba, Ti, Zr, Hf, Fe, Ta, and W; 0?s<0.01 and 0?t<0.01; and 0<|?|<0.3 and 0?|?|<0.3 and 0?|?|<0.5.

Abstract: A crystal material represented by a general formula (1): (Gd1-x-y-zLaxMEyREz)2MM2O7?? (1), where ME is at least one selected from Y, Yb, Sc, and Lu; RE is Ce or Pr; MM is at least one selected from Si and Ge; and ranges of x, y, and z are represented by the following (i): (i) 0.0?x+y+z<1.0, 0.05?x+z<1.0, 0.0?y<1.0, and 0.0001?z<0.05 (where, when RE is Ce, y=0 is an exception).

Abstract: The present invention provides a metal wire rod composed of iridium or an iridium alloy, wherein the number of crystal grains on any cross-section in a longitudinal direction is 2 to 20 per 0.25 mm2, and the Vickers hardness at any part is 200 Hv or more and less than 400 Hv. The iridium wire rod is a material which is produced by a ?-PD method, and has low residual stress and which has a small change in the number of crystal grains and hardness even when heated to a temperature equal to or higher than a recrystallization temperature (1200° C. to 1500° C.). The metal wire rod of the present invention is excellent in oxidative consumption resistance under a high-temperature atmosphere, and mechanical properties.

Abstract: An illuminant has a short fluorescence lifetime, high transparency, and high light yield and a radiation detector uses the illuminant. The illuminant is appropriate for a radiation detector for detecting gamma-rays, X-rays, ?-rays, and neutron rays, and has high radiation resistance, a short fluorescence decay time and high emission intensity. The illuminant has a garnet structure using emission from the 4f5d level of Ce3+, and includes a garnet illuminant prepared by co-doping of at least one type of monovalent or divalent cation at a molar ratio of 7000 ppm or less with respect to all cations, to an illuminant having a garnet structure represented by general formula CexRE3?xM5+yO12+3y/2 (where 0.0001?x?0.3, 0?y?0.5 or 0?y??0.5, M is one type or two or more types selected from Al, Lu, Ga, and Sc, and RE is one type or two or more types selected from La, Pr, Gd, Tb, Yb, Y, and Lu).

Abstract: A crystal material represented by a general formula (1): (Gd1-x-y-zLaxMEyREz)2MM2O7 (1), where ME is at least one selected from Y, Yb, Sc, and Lu; RE is Ce or Pr; MM is at least one selected from Si and Ge; and ranges of x, y, and z are represented by the following (i): (i) 0.0?x+y+z<1.0, 0.05?x+z<1.0, 0.0?y<1.0, and 0.0001?z<0.05 (where, when RE is Ce, y=0 is an exception).

Abstract: An oxide material having a langasite-type structure having a desired surface condition and a desired outer shape is obtained stably. By adding at least one selected from the group consisting of Ir, Pt, Au, and Rh to a raw material which is a composition used for producing a desired oxide material as an additive element, it is possible to control the wettability between a die portion at a bottom end of a crucible and a melt of the raw material, thereby implementing stable production of the oxide material while controlling the wetting and spread of the melt of the raw material leaked out through a hole of the crucible.

Abstract: An oxide material having a langasite-type structure having a desired surface condition and a desired outer shape is obtained stably. By adding at least one selected from the group consisting of Ir, Pt, Au, and Rh to a raw material which is a composition used for producing a desired oxide material as an additive element, it is possible to control the wettability between a die portion at a bottom end of a crucible and a melt of the raw material, thereby implementing stable production of the oxide material while controlling the wetting and spread of the melt of the raw material leaked out through a hole of the crucible.

Abstract: A radiation detecting apparatus of the present invention is an apparatus comprising a scintillator for converting incident radiation into ultraviolet radiation having a wavelength of 220 nm or less, the scintillator being composed of, for example, Nd-doped LaF3 crystals; and a diamond thin film sensor for guiding the resulting ultraviolet radiation and converting it into an electrical signal, the radiation detecting apparatus being adapted to transform the incident radiation to the electrical signal. The radiation detecting apparatus can detect radiation, such as X-rays, ? rays, ? rays, ? rays, or neutron rays, with high sensitivity. The radiation detecting apparatus also has a fast response, is very easy to downsize, has high resistance to radiation, and can be preferably used in the medical field, the industrial field, or the security field.