Patents by Inventor Yuuichi KANEKO

Yuuichi KANEKO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11876055
    Abstract: A semiconductor device, including: a semiconductor substrate formed of silicon carbide, components being formed at one surface of the semiconductor substrate; a periphery portion disposed at a pre-specified region of a periphery of the semiconductor substrate, the components not being formed at the periphery portion; and a plurality of trenches or portions of trenches formed at the periphery portion, an interior of each of the trenches being filled with a material with a different coefficient of thermal expansion from the silicon carbide.
    Type: Grant
    Filed: October 21, 2021
    Date of Patent: January 16, 2024
    Assignee: LAPIS SEMICONDUCTOR CO., LTD.
    Inventors: Kenichi Furuta, Masao Tsujimoto, Nobuhiro Terada, Masahiro Haraguchi, Tsuyoshi Inoue, Yuuichi Kaneko, Hiroki Kuroki, Takaaki Kodaira
  • Publication number: 20220130772
    Abstract: A semiconductor device, including: a semiconductor substrate formed of silicon carbide, components being formed at one surface of the semiconductor substrate; a periphery portion disposed at a pre-specified region of a periphery of the semiconductor substrate, the components not being formed at the periphery portion; and a plurality of trenches or portions of trenches formed at the periphery portion, an interior of each of the trenches being filled with a material with a different coefficient of thermal expansion from the silicon carbide.
    Type: Application
    Filed: October 21, 2021
    Publication date: April 28, 2022
    Applicant: LAPIS Semiconductor Co., Ltd.
    Inventors: Kenichi FURUTA, Masao TSUJIMOTO, Nobuhiro TERADA, Masahiro HARAGUCHI, Tsuyoshi INOUE, Yuuichi KANEKO, Hiroki KUROKI, Takaaki KODAIRA