Abstract: Disclosed is a semiconductor device having ferroelectric capacitors above a principal surface of a substrate and a process for producing the same wherein an oriented polycrystal silicon film or an amorphous silicon film 52 is disposed on the whole area beneath a conductive diffusion barrier, 61 or 73, under a lower electrode, 62 or 74, of each ferroelectric capacitor formed in the device. As a result, the conductive diffusion barrier, the lower electrode and the capacitor ferroelectric film become oriented films; therefore, it is possible to reduce the signal variation in capacitors even in minute semiconductor devices, and obtain a highly reliable semiconductor device.

Abstract: An oriented polycrystal silicon film or an amorphous silicon film 52 is disposed on the whole area beneath a conductive diffusion barrier 61 under a lower electrode of a ferroelectric capacitor. As a result, the conductive diffusion barrier, the lower electrode and the capacitor ferroelectric film become oriented films; therefore, it is possible to reduce the signal variation in capacitors even in minute semiconductor devices, and obtain a highly reliable semiconductor device.