Patents by Inventor Yuuichi Okamoto

Yuuichi Okamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8801150
    Abstract: A piezoelectric device, including the following on a substrate in the order listed below: a lower electrode, a piezoelectric film which contains a Pb containing perovskite oxide represented by a general expression (P) below, and an upper electrode, in which the piezoelectric film has a layer of pyrochlore oxide on the surface facing the lower electrode, and the average layer thickness of the pyrochlore oxide layer is not greater than 20 nm. AaBbO3??(P) where, A: at least one type of A-site element containing Pb as a major component, B: at least one type of B-site element selected from the group consisting of Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Sc, Co, Cu, In, Sn, Ga, Zn, Cd, Fe, and Ni, and O: an oxygen element.
    Type: Grant
    Filed: July 27, 2009
    Date of Patent: August 12, 2014
    Assignee: FUJIFILM Corporation
    Inventors: Yoshikazu Hishinuma, Takehiro Kasahara, Yasukazu Nihei, Takamichi Fujii, Yuuichi Okamoto, Takami Arakawa, Takayuki Naono
  • Patent number: 8075105
    Abstract: Provided is a perovskite-type oxide film having a perovskite-type crystal structure and containing lead as a chief component, which, when subjected to Raman microspectroscopy at a plurality of points on a surface thereof so as to measure Raman spectra upon application of an electric field of 100 kV/cm and upon application of no electric field, has a mean of absolute values of peak shift amounts that is 2.2 cm?1 or less, with the peak shift amounts being found between Raman spectra in a range of 500 to 650 cm?1 measured upon application of an electric field of 100 kV/cm and Raman spectra in the range of 500 to 650 cm?1 measured upon application of no electric field. A production process and an evaluation method for such a film as well as a device using such a film are also provided.
    Type: Grant
    Filed: September 15, 2009
    Date of Patent: December 13, 2011
    Assignee: Fujifilm Corporation
    Inventors: Yoshikazu Hishinuma, Takamichi Fujii, Takayuki Naono, Yuuichi Okamoto, Ryosuke Ozawa
  • Publication number: 20110121096
    Abstract: A piezoelectric device, including the following on a substrate in the order listed below: a lower electrode, a piezoelectric film which contains a Pb containing perovskite oxide represented by a general expression (P) below, and an upper electrode, in which the piezoelectric film has a layer of pyrochlore oxide on the surface facing the lower electrode, and the average layer thickness of the pyrochlore oxide layer is not greater than 20 nm. AaBbO3??(P) where, A: at least one type of A-site element containing Pb as a major component, B: at least one type of B-site element selected from the group consisting of Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Sc, Co, Cu, In, Sn, Ga, Zn, Cd, Fe, and Ni, and O: an oxygen element.
    Type: Application
    Filed: July 27, 2009
    Publication date: May 26, 2011
    Inventors: Yasukazu Nihei, Takamichi Fujii, Yuuichi Okamoto, Takami Arakawa, Takayuki Naono
  • Patent number: 7830073
    Abstract: A perovskite oxide is represented by a general formula ABO3 A represents at least one kind of metal element forming an A site, B represents at least one kind of metal element forming a B site. The B site includes at least one kind of metal element B1 selected from an element group consisting of the IV group elements and at least one kind of metal element B2 selected from an element group consisting of the V and VI group elements, and at least a part of the metal element B2 is of the 0 to +4 valence.
    Type: Grant
    Filed: May 24, 2007
    Date of Patent: November 9, 2010
    Assignee: FUJIFILM Corporation
    Inventors: Yukio Sakashita, Takamichi Fujii, Yuuichi Okamoto
  • Patent number: 7786656
    Abstract: A piezoelectric body contains a ferroelectric substance phase having characteristics such that, in cases where an applied electric field is increased from the time free from electric field application, phase transition of the ferroelectric substance phase to a ferroelectric substance phase of a different crystal system occurs at least two times. The piezoelectric body should preferably be actuated under conditions such that a minimum applied electric field Emin and a maximum applied electric field Emax satisfy Formula (1): Emin<E1<Emax??(1) wherein the electric field E1 represents the electric field at which the first phase transition of the ferroelectric substance phase begins.
    Type: Grant
    Filed: April 25, 2008
    Date of Patent: August 31, 2010
    Assignee: Fujifilm Corporation
    Inventors: Yukio Sakashita, Tsutomu Sasaki, Yuuichi Okamoto, Munenori Nakai
  • Publication number: 20100066788
    Abstract: Provided is a perovskite-type oxide film having a perovskite-type crystal structure and containing lead as a chief component, which, when subjected to Raman microspectroscopy at a plurality of points on a surface thereof so as to measure Raman spectra upon application of an electric field of 100 kV/cm and upon application of no electric field, has a mean of absolute values of peak shift amounts that is 2.2 cm?1 or less, with the peak shift amounts being found between Raman spectra in a range of 500 to 650 cm?1 measured upon application of an electric field of 100 kV/cm and Raman spectra in the range of 500 to 650 cm?1 measured upon application of no electric field. A production process and an evaluation method for such a film as well as a device using such a film are also provided.
    Type: Application
    Filed: September 15, 2009
    Publication date: March 18, 2010
    Inventors: Yoshikazu HISHINUMA, Takamichi FUJII, Takayuki NAONO, Yuuichi OKAMOTO, Ryosuke OZAWA
  • Publication number: 20080265718
    Abstract: A piezoelectric body contains a ferroelectric substance phase having characteristics such that, in cases where an applied electric field is increased from the time free from electric field application, phase transition of the ferroelectric substance phase to a ferroelectric substance phase of a different crystal system occurs at least two times. The piezoelectric body should preferably be actuated under conditions such that a minimum applied electric field Emin and a maximum applied electric field Emax satisfy Formula (1): Emin<E1<Emax ??(1) wherein the electric field E1 represents the electric field at which the first phase transition of the ferroelectric substance phase begins.
    Type: Application
    Filed: April 25, 2008
    Publication date: October 30, 2008
    Inventors: Yukio Sakashita, Tsutomu Sasaki, Yuuichi Okamoto, Munenori Nakai
  • Patent number: 7343073
    Abstract: It is disclosed a polymerizable composition for producing an optical member for 850 nm wavelength comprising: a polymerizable monomer composition and a compound, having a different refractive index from that of the polymerizable monomer composition, whose structure has a benzene ring substituted by a substituent having a Hammett value of not greater than 0.04 or by plural substituents having an average value of Hammett values thereof of not greater than 0.04. It is also disclosed a polymerizable composition for producing an optical member comprising a polymerizable monomer composition comprising at least one selected from the group consisting of C7-20 alicyclic (meth)acrylates and a compound, having a different refractive index from that of the polymerizable monomer composition and having a solubility parameter of not greater than 10.9, whose structure has a benzene ring substituted by the substituent or the substituents defined above.
    Type: Grant
    Filed: November 14, 2003
    Date of Patent: March 11, 2008
    Assignee: FUJIFILM Corporation
    Inventors: Takayasu Yasuda, Hiroki Sasaki, Ryoichi Nemori, Yuuichi Okamoto
  • Publication number: 20070287030
    Abstract: A perovskite oxide is represented by a general formula ABO3 A represents at least one kind of metal element forming an A site, B represents at least one kind of metal element forming a B site. The B site includes at least one kind of metal element B1 selected from an element group consisting of the IV group elements and at least one kind of metal element B2 selected from an element group consisting of the V and VI group elements, and at least a part of the metal element B2 is of the 0 to +4 valence.
    Type: Application
    Filed: May 24, 2007
    Publication date: December 13, 2007
    Inventors: Yukio Sakashita, Takamichi Fujii, Yuuichi Okamoto
  • Publication number: 20060056786
    Abstract: It is disclosed a polymerizable composition for producing an optical member for 850 nm wavelength comprising: a polymerizable monomer composition and a compound, having a different refractive index from that of the polymerizable monomer composition, whose structure has a benzene ring substituted by a substituent having a Hammett value of not greater than 0.04 or by plural substituents having an average value of Hammett values thereof of not greater than 0.04. It is also disclosed a polymerizable composition for producing an optical member comprising a polymerizable monomer composition comprising at least one selected from the group consisting of C7-20 alicyclic (meth) acrylates and a compound, having a different refractive index from that of the polymerizable monomer composition and having a solubility parameter of not greater than 10.9, whose structure has a benzene ring substituted by the substituent or the substituents defined above.
    Type: Application
    Filed: November 14, 2003
    Publication date: March 16, 2006
    Inventors: Takayasu Yasuda, Hiroki Sasaki, Ryoichi Nemori, Yuuichi Okamoto