Patent number: 8801150
Abstract: A piezoelectric device, including the following on a substrate in the order listed below: a lower electrode, a piezoelectric film which contains a Pb containing perovskite oxide represented by a general expression (P) below, and an upper electrode, in which the piezoelectric film has a layer of pyrochlore oxide on the surface facing the lower electrode, and the average layer thickness of the pyrochlore oxide layer is not greater than 20 nm. AaBbO3??(P) where, A: at least one type of A-site element containing Pb as a major component, B: at least one type of B-site element selected from the group consisting of Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Sc, Co, Cu, In, Sn, Ga, Zn, Cd, Fe, and Ni, and O: an oxygen element.
Type:
Grant
Filed:
July 27, 2009
Date of Patent:
August 12, 2014
Assignee:
FUJIFILM Corporation
Inventors:
Yoshikazu Hishinuma, Takehiro Kasahara, Yasukazu Nihei, Takamichi Fujii, Yuuichi Okamoto, Takami Arakawa, Takayuki Naono