Abstract: A light-emitting device has a plurality of light-emitting elements, wherein the light-emitting element has a substrate having a transistor element that drives the light-emitting element, a wiring layer that is arranged over the substrate, and a light-emitting unit that is arranged over the wiring layer and includes an anode electrode, a light-emitting layer arranged on the anode electrode, and a cathode electrode arranged on the light-emitting layer, and heater wiring is arranged between the light-emitting unit and the wiring layer in at least some of the plurality of the light-emitting elements.

Abstract: A display apparatus includes a plurality of pixels arranged in a manner forming a plurality of rows and a plurality of columns; a plurality of first column signal lines configured to supply a signal potential to the plurality of pixels in accordance with video data, and at least one second column signal line configured to supply a reference potential to the plurality of pixels. The plurality of first column signal lines and the at least one second column signal line are arranged along columns of the plurality of pixels, and the at least one second column signal line is commonly connected to pixels of at least two columns, among the plurality of pixels.

Abstract: Photoelectric conversion device includes semiconductor chip including first semiconductor region, second semiconductor region arranged on the first semiconductor region, and third semiconductor region arranged on the second semiconductor region. Chip end face of the semiconductor chip is formed by the first semiconductor region, the second semiconductor region and the third semiconductor region. The first semiconductor region is of first conductivity type and the second semiconductor region is of second conductivity type. The third semiconductor region includes photoelectric conversion region, readout circuit region, and peripheral region. The peripheral region includes isolation region and outer periphery region arranged between the chip end face and the isolation region. The isolation region is of the second conductivity type and the outer periphery region is of the first conductivity type.

Abstract: An imaging apparatus is provided and is configured in such a manner that a plurality of first pixels are connected to a first AD conversion unit, and a plurality of second pixels are connected to a second AD conversion unit whereby the imaging apparatus has a beneficial connection relationship between the pixels and the AD conversion units.

Abstract: Photoelectric conversion device includes semiconductor chip including first semiconductor region, second semiconductor region arranged on the first semiconductor region, and third semiconductor region arranged on the second semiconductor region. Chip end face of the semiconductor chip is formed by the first semiconductor region, the second semiconductor region and the third semiconductor region. The first semiconductor region is of first conductivity type and the second semiconductor region is of second conductivity type. The third semiconductor region includes photoelectric conversion region, readout circuit region, and peripheral region. The peripheral region includes isolation region and outer periphery region arranged between the chip end face and the isolation region. The isolation region is of the second conductivity type and the outer periphery region is of the first conductivity type.

Abstract: An imaging apparatus is provided and is configured in such a manner that a plurality of first pixels are connected to a first AD conversion unit, and a plurality of second pixels are connected to a second AD conversion unit whereby the imaging apparatus has a beneficial connection relationship between the pixels and the AD conversion units.

Abstract: A solid-state image pickup apparatus includes a first antireflection coating film formed on a light-receiving surface of a first photoelectric conversion element and a second antireflection coating film formed on a light-receiving surface of a second photoelectric conversion element. A total length of first photoelectric conversion element facing portions of gate lines adjacent to the first photoelectric conversion element is shorter than a total length of second photoelectric conversion element facing portions of gate lines adjacent to the second photoelectric conversion element. An area of the first antireflection coating film is larger than that of the second antireflection coating film.

Abstract: This invention discloses a photoelectric conversion device. The photoelectric conversion device includes a pixel array in which a plurality of pixels are arrayed in a row direction and a column direction, a plurality of readout circuits which read out signals from pixels for respective columns in the pixel array, and a control unit which controls the plurality of readout circuits, wherein each of the plurality of readout circuits includes a holding unit which holds a reference voltage supplied from an external power source, an operational amplification unit which amplifies the signals from the pixels for each column based on the reference voltage held in the holding unit, and a disconnection unit which electrically disconnects the external power source and the holding unit, and the control unit controls the disconnection unit to electrically disconnect the external power source and the holding unit when the operational amplification unit amplifies the signals from the pixels for each column.

Abstract: This invention discloses a photoelectric conversion device. The photoelectric conversion device includes a pixel array in which a plurality of pixels are arrayed in a row direction and a column direction, a plurality of readout circuits which read out signals from pixels for respective columns in the pixel array, and a control unit which controls the plurality of readout circuits, wherein each of the plurality of readout circuits includes a holding unit which holds a reference voltage supplied from an external power source, an operational amplification unit which amplifies the signals from the pixels for each column based on the reference voltage held in the holding unit, and a disconnection unit which electrically disconnects the external power source and the holding unit, and the control unit controls the disconnection unit to electrically disconnect the external power source and the holding unit when the operational amplification unit amplifies the signals from the pixels for each column.

Abstract: This invention discloses a photoelectric conversion device. The photoelectric conversion device includes a pixel array in which a plurality of pixels are arrayed in a row direction and a column direction, a plurality of readout circuits which read out signals from pixels for respective columns in the pixel array, and a control unit which controls the plurality of readout circuits, wherein each of the plurality of readout circuits includes a holding unit which holds a reference voltage supplied from an external power source, an operational amplification unit which amplifies the signals from the pixels for each column based on the reference voltage held in the holding unit, and a disconnection unit which electrically disconnects the external power source and the holding unit, and the control unit controls the disconnection unit to electrically disconnect the external power source and the holding unit when the operational amplification unit amplifies the signals from the pixels for each column.

Abstract: A solid-state image pickup apparatus includes a first antireflection coating film formed on a light-receiving surface of a first photoelectric conversion element and a second antireflection coating film formed on a light-receiving surface of a second photoelectric conversion element. A total length of first photoelectric conversion element facing portions of gate lines adjacent to the first photoelectric conversion element is shorter than a total length of second photoelectric conversion element facing portions of gate lines adjacent to the second photoelectric conversion element. An area of the first antireflection coating film is larger than that of the second antireflection coating film.

Abstract: This invention discloses a photoelectric conversion device. The photoelectric conversion device includes a pixel array in which a plurality of pixels are arrayed in a row direction and a column direction, a plurality of readout circuits which read out signals from pixels for respective columns in the pixel array, and a control unit which controls the plurality of readout circuits, wherein each of the plurality of readout circuits includes a holding unit which holds a reference voltage supplied from an external power source, an operational amplification unit which amplifies the signals from the pixels for each column based on the reference voltage held in the holding unit, and a disconnection unit which electrically disconnects the external power source and the holding unit, and the control unit controls the disconnection unit to electrically disconnect the external power source and the holding unit when the operational amplification unit amplifies the signals from the pixels for each column.