Patents by Inventor Yuuichirou Sekimoto

Yuuichirou Sekimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating a semiconductor device by considering the extinction coefficient during etching of an interlayer insulating film
    Patent number: 8440557
    Abstract: The present invention is directed to a method for manufacturing a semiconductor device by forming an ultraviolet radiation absorbing film of a silicon-rich film above a semiconductor substrate, measuring an extinction coefficient of the ultraviolet radiation absorbing film of a silicon-rich film for ultraviolet radiation, and etching the ultraviolet radiation absorbing film of a silicon-rich film under an etching condition using an oxygen gas flow rate corresponding to the extinction coefficient.
    Type: Grant
    Filed: July 20, 2010
    Date of Patent: May 14, 2013
    Assignee: Spansion LLC
    Inventors: Seiji Yokoyama, Yuuichirou Sekimoto, Sinichi Imada
  • METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE BY CONSIDERING THE EXTINCTION COEFFICIENT DURING ETCHING OF AN INTERLAYER INSULATING FILM
    Publication number: 20100279441
    Abstract: The present invention is directed to a method for manufacturing a semiconductor device by forming an ultraviolet radiation absorbing film of a silicon-rich film above a semiconductor substrate, measuring an extinction coefficient of the ultraviolet radiation absorbing film of a silicon-rich film for ultraviolet radiation, and etching the ultraviolet radiation absorbing film of a silicon-rich film under an etching condition using an oxygen gas flow rate corresponding to the extinction coefficient.
    Type: Application
    Filed: July 20, 2010
    Publication date: November 4, 2010
    Inventors: Seiji Yokoyama, Yuuichirou Sekimoto, Sinichi Imada
  • Method for fabricating a semiconductor device by considering the extinction coefficient during etching of an interlayer insulating film
    Patent number: 7781320
    Abstract: The present invention is directed to a method for manufacturing a semiconductor device by forming an ultraviolet radiation absorbing film of a silicon-rich film above a semiconductor substrate, measuring an extinction coefficient of the ultraviolet radiation absorbing film of a silicon-rich film for ultraviolet radiation, and etching the ultraviolet radiation absorbing film of a silicon-rich film under an etching condition using an oxygen gas flow rate corresponding to the extinction coefficient.
    Type: Grant
    Filed: October 16, 2008
    Date of Patent: August 24, 2010
    Assignee: Spansion LLC
    Inventors: Seiji Yokoyama, Yuuichirou Sekimoto, Shinichi Imada
  • METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE BY CONSIDERING THE EXTINCTION COEFFICIENT DURING ETCHING OF AN INTERLAYER INSULATING FILM
    Publication number: 20090269864
    Abstract: The present invention is directed to a method for manufacturing a semiconductor device by forming an ultraviolet radiation absorbing film of a silicon-rich film above a semiconductor substrate, measuring an extinction coefficient of the ultraviolet radiation absorbing film of a silicon-rich film for ultraviolet radiation, and etching the ultraviolet radiation absorbing film of a silicon-rich film under an etching condition using an oxygen gas flow rate corresponding to the extinction coefficient.
    Type: Application
    Filed: October 16, 2008
    Publication date: October 29, 2009
    Inventors: Seiji Yokoyama, Yuuichirou Sekimoto, Shinichi Imada