Patents by Inventor Yuuichirou Tokuda

Yuuichirou Tokuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Apparatus for manufacturing a silicon carbide single crystal comprising a mounting portion and a purge gas introduction system
    Patent number: 9328431
    Abstract: An apparatus for manufacturing a silicon carbide single crystal grows the silicon carbide single crystal on a surface of a seed crystal made from a silicon carbide single crystal substrate by supplying a material gas for silicon carbide from below the seed crystal. The apparatus includes a base having a first side and a second side opposite to the first side. The seed crystal is mounted on the first side of the base. The apparatus further includes a purge gas introduction mechanism for supporting the base and for supplying a purge gas to the base from the second side of the base. The base has a purge gas introduction path for discharging the supplied purge gas from the base toward an outer edge of the seed crystal.
    Type: Grant
    Filed: December 14, 2011
    Date of Patent: May 3, 2016
    Assignee: DENSO CORPORATION
    Inventors: Kazukuni Hara, Yuuichirou Tokuda
  • Apparatus for manufacturing silicon carbide single crystal
    Patent number: 8882911
    Abstract: An apparatus for manufacturing a silicon carbide single crystal grows the silicon carbide single crystal on a seed crystal by supplying a material gas from below the seed crystal. The apparatus includes a heating container and a base located in the heating container. The seed crystal is mounded on the base. The apparatus further includes a first inlet for causing a purge gas to flow along an inner wall surface of the heating container, a purge gas source for supplying the purge gas to the first inlet, a second inlet for causing the purge gas to flow along an outer wall surface of the base, and a mechanism for supporting the base and for supplying the purge gas to the base from below the base.
    Type: Grant
    Filed: December 14, 2011
    Date of Patent: November 11, 2014
    Assignee: DENSO CORPORATION
    Inventors: Yuuichirou Tokuda, Kazukuni Hara, Jun Kojima
  • APPARATUS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
    Publication number: 20120152166
    Abstract: An apparatus for manufacturing a silicon carbide single crystal grows the silicon carbide single crystal on a seed crystal by supplying a material gas from below the seed crystal. The apparatus includes a heating container and a base located in the heating container. The seed crystal is mounded on the base. The apparatus further includes a first inlet for causing a purge gas to flow along an inner wall surface of the heating container, a purge gas source for supplying the purge gas to the first inlet, a second inlet for causing the purge gas to flow along an outer wall surface of the base, and a mechanism for supporting the base and for supplying the purge gas to the base from below the base.
    Type: Application
    Filed: December 14, 2011
    Publication date: June 21, 2012
    Applicant: DENSO CORPORATION
    Inventors: Yuuichirou TOKUDA, Kazukuni Hara, Jun Kojima
  • APPARATUS AND METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
    Publication number: 20120152165
    Abstract: An apparatus for manufacturing a silicon carbide single crystal grows the silicon carbide single crystal on a surface of a seed crystal made from a silicon carbide single crystal substrate by supplying a material gas for silicon carbide from below the seed crystal. The apparatus includes a base having a first side and a second side opposite to the first side. The seed crystal is mounded on the first side of the base. The apparatus further includes a purge gas introduction mechanism for supporting the base and for supplying a purge gas to the base from the second side of the base. The base has a purge gas introduction path for discharging the supplied purge gas from the base toward an outer edge of the seed crystal.
    Type: Application
    Filed: December 14, 2011
    Publication date: June 21, 2012
    Applicant: DENSO CORPORATION
    Inventors: Kazukuni HARA, Yuuichirou Tokuda