Abstract: Each of the auxiliary capacitors (6a) includes a capacitor line (11b) comprised of the same material as the gate electrode (11a) and provided in the same layer as the gate electrode (11a), the gate insulating film (12) provided so as to cover the capacitor line (11a), a capacitor intermediate layer (13c) provided using the oxide semiconductor and provided on the gate insulating film (12) so as to overlap the capacitor line (11b), and a capacitor electrode (15b) provided on the capacitor intermediate layer (13c), and the capacitor intermediate layer (13c) is conductive.

Abstract: An active matrix substrate (20a) includes a plurality of pixel electrodes (18a) arranged in a matrix, and a plurality of TFTs (5) each connected to a corresponding one of the pixel electrodes (18a), and each including a gate electrode (11a) provided on an insulating substrate (10a), a gate insulating film (12a) covering the gate electrode (11a), a semiconductor layer (16a) provided on the gate insulating film (12a) and having a channel region (C) overlapping the gate electrode (11a), and a source electrode (15aa) and a drain electrode (15b) of copper or copper alloy provided on the gate insulating film (12a) and separated from each other by the channel region (C) of the semiconductor layer (16a). The semiconductor layer (16a) is formed of an oxide semiconductor and covers the source electrode (15aa) and the drain electrode (15b).

Abstract: A TFT substrate (30a) including a TFT (5a) having: a gate electrode (14a) provided on a substrate (10a); a gate insulating film (15) provided to cover the gate electrode (14a); a semiconductor layer (16a) made of an oxide semiconductor provided on the gate insulating film (15) with a channel region (C) arranged to lie above the gate electrode (14a): and a source electrode (19aa) and a drain electrode (19b) provided on the semiconductor layer (16a) to be spaced from each other with the channel region (C) therebetween. A recess (R) is provided on the surface of the channel region (C) of the semiconductor layer (16a) to extend in the channel width direction.

Abstract: A semiconductor device includes: a thin film transistor having a gate line (3a), a first insulating film (5), an island-shaped oxide semiconductor layer (7a), a second insulating film (9), a source line (13as), a drain electrode (13ad), and a passivation film; and a terminal portion having a first connecting portion (3c) made of the same conductive film as the gate line, a second connecting portion (13c) made of the same conductive film as the source line and the drain electrode, and a third connecting portion (19c) formed on the second connecting portion.

Abstract: An active matrix substrate includes a plurality of pixels arranged in a matrix, a plurality of capacitor lines (11b) extending in one of directions in which the pixels are aligned and in parallel to each other, a plurality of TFTs (5), one for each of the pixels, a protective film (16a) covering the TFTs (5), a plurality of pixel electrodes (18a) arranged in a matrix on the protective film (16a) and connected to the respective corresponding TFTs (5), and a plurality of auxiliary capacitors (6), one for each of the pixels. Each of the auxiliary capacitors (6) includes the corresponding capacitor line (11b), the corresponding pixel electrode (18a), and the protective film (16a) between the corresponding capacitor line (11b) and the corresponding pixel electrode (18a).

Abstract: The present invention provides a thin film transistor including an oxide semiconductor layer (4) for electrically connecting a signal electrode (6a) and a drain electrode (7a), the an oxide semiconductor layer being made from an oxide semiconductor; and a barrier layer (6b) made from at least one selected from the group consisting of Ti, Mo, W, Nb, Ta, Cr, nitrides thereof, and alloys thereof, the barrier layer (6b) being in touch with the signal electrode (6a) and the oxide semiconductor layer (4) and separating the signal electrode (6a) from the oxide semiconductor layer (4). Because of this configuration, the thin film transistor can form and maintain an ohmic contact between the first electrode and the channel layer, thereby being a thin film transistor with good properties.

Abstract: Any oxide superconductor Josephson junction element having an oxide superconductor oriented in the c-axis direction with respect to a substrate, and a needle-like, a-axis (or b-axis) oriented oxide superconductor. Both sides of the needle-like, a-axis (or b-axis) oriented oxide superconductor are sandwiched between the c-axis oriented superconductors. The crystal boundary sections between the needle-like, a-axis (or b-axis) oriented oxide superconductor and each of the c-axis oriented superconductors form a weak link of the Josephson junction. The needle-like, a-axis (or b-axis) oriented oxide superconductor is grown such that the c-axis direction thereof is oriented in the (110) direction which is inclined at an angle of 45 degrees with respect to the (100) direction or (010) direction of the c-axis oriented superconductors.

Abstract: An oxide superconductor element, produced by forming a damaged region on a substrate surface by the Ga.sup.+ focusing ion beam method and then depositing an oxide superconductor thin-film over it, is characterized in that a NdBa.sub.2 Cu.sub.3 O.sub.7-y (0.ltoreq.y.ltoreq.0.5) oxide superconductor is used in a tunnel junction having a tunneling barrier region with weak superconductivity.