Abstract: A hydrogen generator includes: a water evaporation unit configured to mix water with a raw gas; a burner; a combustion exhaust gas flow channel provided on an inner side than the water evaporation unit and through which a combustion exhaust gas from the burner flows; a reforming catalyst layer configured to produce a reformed gas; and a carbon monoxide reduction unit configured to reduce an amount of carbon monoxide contained in the reformed gas. The water evaporation unit includes a flow channel member defining a flow channel through which the raw gas and the water flow. A pitch of the flow channel member is changed according to at least one of an amount of heat exchange between the combustion exhaust gas flow channel and the water evaporation unit and an amount of heat exchange between the water evaporation unit and the carbon monoxide reduction unit.

Abstract: An object is to provide a hydrogen generation apparatus in which water can be helically flow down in an evaporator without fail, a method for manufacturing the hydrogen generation apparatus, and a fuel cell system using the hydrogen generation apparatus. The hydrogen generation apparatus includes a reformer configured to generate a hydrogen-containing gas; an evaporator 8 which includes an inner tube 9 and an outer tube 10, and a deformed hollow helical member 18 helically interposed between the inner tube 9 and the outer tube 10 and which is configured to evaporate the water supplied to the reformer 8; and a heat source 2 configured to evaporate the water. The evaporator 8 is configured such that the water is supplied to a helical flow channel 8A defined by the inner tube 9, the outer tube 10, and the hollow helical member 18 and evaporated by the heat source 2.

Abstract: A hydrogen generation device or a fuel cell system of the present invention can prevent deterioration or breakage of portions of the hydrogen generation device, which is caused by thermal stress attributable to repeated operation and halt. Thus, it is possible to increase the life and enhance the stability of the device and the system. A hydrogen generation device 76 of a fuel cell system 100 includes a hydrogen generation device main body 78 including a combustor 4 provided therein for combusting a predetermined medium capable of generating hydrogen and a plurality of pipes which are connected to the hydrogen generation device main body 78 for allowing the predetermined medium flow into or out of the hydrogen generation device main body 78. A temperature gradient is formed in the hydrogen generation device main body 78 by operation of the combustor 4, whereby a high temperature portion and a low temperature portion are formed in the hydrogen generation device main body 78.

Abstract: There is provided a hydrogen generator that prevents supply of droplets to a reforming catalyst layer and that exhibits stable performance. The hydrogen generator includes a water evaporation unit 7 to which a raw gas and water is supplied; a reforming catalyst layer 9 to which a gas mixture is supplied from the water evaporation unit 7; a burner 4 configured to mix and combust a fuel gas with air; a combustion exhaust gas flow channel 16 which is provided on an inner side of the water evaporation unit 7 and through which the combustion exhaust gas flows; and a conversion catalyst layer 10 which is disposed on an outer side of the water evaporation unit 7 and to which a reformed gas is supplied.

Abstract: A silicon structure having little solar light beam reflection, which is suitable for a solar battery. On the entire surface of a quartz substrate, Mo is deposited at a thickness of approximately 1 &mgr;m to form a lower electrode. On the entire surface of the lower electrode, a p type silicon structure having a thickness of 30 to 40 &mgr;m comprising an aggregate of a plurality of columnar silicon members mainly comprising silicon and having random orientations is formed via a film mainly comprising silicon, using Si2Cl6 mixed with BCl3. On the surface of the p type silicon structure, P is diffused by a thermal diffusion method using POCl3 to form an n type region at the periphery of the columnar silicon members. On the entire surface of the p type silicon structure, a transparent electrode comprising indium-tin oxide having a thickness of 30 to 40 &mgr;m is formed, and an upper electrode comprising Al having a thickness of approximately 1 &mgr;m is formed on the transparent electrode.

Abstract: A silicon structure having little solar light beam reflection, which is suitable for a solar battery. On the entire surface of a quartz substrate, Mo is deposited at a thickness of approximately 51 &mgr;m to form a lower electrode. On the entire surface of the lower electrode, a p type silicon structure having a thickness of 30 to 40 &mgr;m comprising an aggregate of a plurality of columnar silicon members mainly comprising silicon and having random orientations is formed via a film mainly comprising silicon, using Si2Cl6 mixed with BCl3. On the surface of the p type silicon structure, P is diffused by a thermal diffusion method using POCl3 to form an n type region at the periphery of the columnar silicon members. On the entire surface of the p type silicon structure, a transparent electrode comprising indium-tin oxide having a thickness of 30 to 40 &mgr;m is formed, and an upper electrode comprising Al having a thickness of approximately 1 &mgr;m is formed on the transparent electrode.

Abstract: A beam emitted from a light source including the characteristic wavelength of flown particles in a film forming system is interrupted by a beam chopper in a predetermined cycle, and is then divided into a probing beam and a reference beam by a beam divider. The probing beam passes through a particle flight area and is then injected into a photo detector through an optical filter, and a probing signal is outputted. A reference signal is obtained from the reference beam in the same manner. A data processor detects the phase and level of both signals, so that an absorbance, i.e., a film forming rate for the flown particles is estimated. The film forming rate is integrated with time so that a film thickness is estimated. Thus, the range of the applicable film forming rate is wide.