Patents by Inventor Yuuji NISHIMURA
Yuuji NISHIMURA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230396895Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.Type: ApplicationFiled: August 23, 2023Publication date: December 7, 2023Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Takeshi YANAGITA, Masaaki TAKIZAWA, Yuuji NISHIMURA, Shinichi ARAKAWA, Yuugo NAKAMURA, Yohei CHIBA
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Patent number: 11778349Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.Type: GrantFiled: June 14, 2022Date of Patent: October 3, 2023Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Takeshi Yanagita, Masaaki Takizawa, Yuuji Nishimura, Shinichi Arakawa, Yuugo Nakamura, Yohei Chiba
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Patent number: 11470276Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.Type: GrantFiled: June 30, 2021Date of Patent: October 11, 2022Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Takeshi Yanagita, Masaaki Takizawa, Yuuji Nishimura, Shinichi Arakawa, Yuugo Nakamura, Yohei Chiba
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Publication number: 20220311964Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.Type: ApplicationFiled: June 14, 2022Publication date: September 29, 2022Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Takeshi YANAGITA, Masaaki TAKIZAWA, Yuuji NISHIMURA, Shinichi ARAKAWA, Yuugo NAKAMURA, Yohei CHIBA
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Patent number: 11252356Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.Type: GrantFiled: June 17, 2020Date of Patent: February 15, 2022Assignee: Sony Semiconductor Solutions CorporationInventors: Takeshi Yanagita, Masaaki Takizawa, Yuuji Nishimura, Shinichi Arakawa, Yuugo Nakamura, Yohei Chiba
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Publication number: 20210329183Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.Type: ApplicationFiled: June 30, 2021Publication date: October 21, 2021Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Takeshi YANAGITA, Masaaki TAKIZAWA, Yuuji NISHIMURA, Shinichi ARAKAWA, Yuugo NAKAMURA, Yohei CHIBA
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Patent number: 10847561Abstract: The present technology relates to a solid-state imaging element that is capable of suppressing occurrence of flares, ghosts, and color-mixing, and is capable of suppressing occurrence of stains caused by moisture and a method for manufacturing the same, and an electronic device. The solid-state imaging element includes a pixel in which a single-layered anti-reflective film is formed on a surface of a microlens and a pixel in which a double-layered anti-reflective film is formed on the surface of the microlens. For example, the present technology is applicable to a rear surface irradiation-type solid-state imaging element.Type: GrantFiled: September 28, 2017Date of Patent: November 24, 2020Assignee: Sony Semiconductor Solutions CorporationInventors: Kouichi Itabasi, Yuuji Nishimura, Mitsuru Ishikawa, Yuichi Seki, Masaya Shimoji
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Publication number: 20200314371Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.Type: ApplicationFiled: June 17, 2020Publication date: October 1, 2020Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Takeshi YANAGITA, Masaaki TAKIZAWA, Yuuji NISHIMURA, Shinichi ARAKAWA, Yuugo NAKAMURA, Yohei CHIBA
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Patent number: 10728475Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.Type: GrantFiled: May 26, 2016Date of Patent: July 28, 2020Assignee: Sony Semiconductor Solutions CorporationInventors: Takeshi Yanagita, Masaaki Takizawa, Yuuji Nishimura, Shinichi Arakawa, Yuugo Nakamura, Yohei Chiba
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Patent number: 10721422Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.Type: GrantFiled: May 2, 2019Date of Patent: July 21, 2020Assignee: Sony Semiconductor Solutions CorporationInventors: Takeshi Yanagita, Masaaki Takizawa, Yuuji Nishimura, Shinichi Arakawa, Yuugo Nakamura, Yohei Chiba
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Publication number: 20200185443Abstract: The present technology relates to a solid-state imaging element that is capable of suppressing occurrence of flares, ghosts, and color-mixing, and is capable of suppressing occurrence of stains caused by moisture and a method for manufacturing the same, and an electronic device. The solid-state imaging element includes a pixel in which a single-layered anti-reflective film is formed on a surface of a microlens and a pixel in which a double-layered anti-reflective film is formed on the surface of the microlens. For example, the present technology is applicable to a rear surface irradiation-type solid-state imaging element.Type: ApplicationFiled: September 28, 2017Publication date: June 11, 2020Applicant: Sony Semiconductor Solutions CorporationInventors: Kouichi ITABASI, Yuuji NISHIMURA, Mitsuru ISHIKAWA, Yuichi SEKI, Masaya SHIMOJI
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Publication number: 20190260950Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.Type: ApplicationFiled: May 2, 2019Publication date: August 22, 2019Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Takeshi YANAGITA, Masaaki TAKIZAWA, Yuuji NISHIMURA, Shinichi ARAKAWA, Yuugo NAKAMURA, Yohei CHIBA
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Patent number: 10341592Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.Type: GrantFiled: December 20, 2017Date of Patent: July 2, 2019Assignee: Sony Semiconductor Solutions CorporationInventors: Takeshi Yanagita, Masaaki Takizawa, Yuuji Nishimura, Shinichi Arakawa, Yuugo Nakamura, Yohei Chiba
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Publication number: 20180184025Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.Type: ApplicationFiled: May 26, 2016Publication date: June 28, 2018Inventors: Takeshi YANAGITA, Masaaki TAKIZAWA, Yuuji NISHIMURA, Shinichi ARAKAWA, Yuugo NAKAMURA, Yohei CHIBA
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Patent number: 10008529Abstract: The present disclosure relates to a solid-state imaging device that enables diffusion of components in the interfaces between microlenses and an antireflection film, a method of manufacturing the solid-state imaging device, and an electronic apparatus. Moisture permeation holes are formed between the microlenses of adjacent pixels. The moisture permeation holes are covered with an antireflection film. The antireflection film is formed on the surfaces of the microlenses excluding the diffusion holes. The refractive index of the antireflection film is higher than the refractive index of the microlenses. The present disclosure can be applied to complementary metal oxide semiconductor (CMOS) image sensors that are back-illuminated solid-state imaging devices, for example.Type: GrantFiled: September 17, 2015Date of Patent: June 26, 2018Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Takashi Nakashikiryo, Yoshiaki Kitano, Yuuji Nishimura, Kouichi Itabasi, Ryou Chiba, Yosuke Takita, Mitsuru Ishikawa, Toyomi Jinwaki, Yuichi Seki, Masaya Shimoji, Yoichi Ootsuka, Takafumi Nishi
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Publication number: 20180115727Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.Type: ApplicationFiled: December 20, 2017Publication date: April 26, 2018Inventors: Takeshi YANAGITA, Masaaki TAKIZAWA, Yuuji NISHIMURA, Shinichi ARAKAWA, Yuugo NAKAMURA, Yohei CHIBA
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Publication number: 20170278889Abstract: The present disclosure relates to a solid-state imaging device that enables diffusion of components in the interfaces between microlenses and an antireflection film, a method of manufacturing the solid-state imaging device, and an electronic apparatus. Moisture permeation holes are formed between the microlenses of adjacent pixels. The moisture permeation holes are covered with an antireflection film. The antireflection film is formed on the surfaces of the microlenses excluding the diffusion holes. The refractive index of the antireflection film is higher than the refractive index of the microlenses. The present disclosure can be applied to complementary metal oxide semiconductor (CMOS) image sensors that are back-illuminated solid-state imaging devices, for example.Type: ApplicationFiled: September 17, 2015Publication date: September 28, 2017Inventors: TAKASHI NAKASHIKIRYO, YOSHIAKI KITANO, YUUJI NISHIMURA, KOUICHI ITABASI, RYOU CHIBA, YOSUKE TAKITA, MITSURU ISHIKAWA, TOYOMI JINWAKI, YUICHI SEKI, MASAYA SHIMOJI, YOICHI OOTSUKA, TAKAFUMI NISHI
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Patent number: 9099534Abstract: A manufacturing method of a semiconductor device includes exposing a wiring layer which is formed of an alloy including two or more types of metals having different standard electrode potentials, on one surface side of a semiconductor substrate and performing a plasma process of allowing plasma generated by a mixture gas of a gas including nitrogen and an inert gas or plasma generated by a gas including nitrogen to irradiate a range which includes an exposed surface of the wiring layer.Type: GrantFiled: June 30, 2014Date of Patent: August 4, 2015Assignee: Sony CorporationInventors: Kazuto Watanabe, Atsushi Matsushita, Hiroshi Horikoshi, Iwao Sugiura, Yuuji Nishimura, Syota Yamabata
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Publication number: 20140329353Abstract: A manufacturing method of a semiconductor device includes exposing a wiring layer which is formed of an alloy including two or more types of metals having different standard electrode potentials, on one surface side of a semiconductor substrate and performing a plasma process of allowing plasma generated by a mixture gas of a gas including nitrogen and an inert gas or plasma generated by a gas including nitrogen to irradiate a range which includes an exposed surface of the wiring layer.Type: ApplicationFiled: June 30, 2014Publication date: November 6, 2014Applicant: SONY CORPORATIONInventors: Kazuto Watanabe, Atsushi Matsushita, Hiroshi Horikoshi, Iwao Sugiura, Yuuji Nishimura, Syota Yamabata
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Patent number: 8786089Abstract: A manufacturing method of a semiconductor device includes exposing a wiring layer which is formed of an alloy including two or more types of metals having different standard electrode potentials, on one surface side of a semiconductor substrate and performing a plasma process of allowing plasma generated by a mixture gas of a gas including nitrogen and an inert gas or plasma generated by a gas including nitrogen to irradiate a range which includes an exposed surface of the wiring layer.Type: GrantFiled: January 26, 2012Date of Patent: July 22, 2014Assignee: Sony CorporationInventors: Kazuto Watanabe, Atsushi Matsushita, Hiroshi Horikoshi, Iwao Sugiura, Yuuji Nishimura, Syota Yamabata