Abstract: A bulb type electrodeless discharge lamp, comprising a recessed part (102), wherein the maximum diameter of a light emitting tube (101) is 60 to 90 mm and the tube wall load of the light emitting tube (101) is 0.07 to 0.11 W/cm2, and a relation between the diameter Dc of the recessed part (102) and an interval ?h between the top of the recessed part (102) and the top part of the light emitting tube (101) meets the requirement of ?h?1.15×Dc+1.25 [mm].

Abstract: An electrodeless discharge lamp operating device including a light-transmitting discharge bulb 120, an induction coil including a core 103 and a coil 104, and a ballast circuit 140 for supplying a high-frequency power to the induction coil. The operating frequency of the ballast circuit 140 is in the range of 80 kHz to 500 kHz, and where the operating frequency of the ballast circuit 140 is f (kHz) and the power input to the discharge bulb 120 is P (W), the rare gas pressure p (Pa) in the discharge bulb 120 satisfies the relationship of the following expression: p ? A P - B f 2 - C [ Expression ? ? 1 ] (where A, B and C are constants having the following values: A=4.0×104, B=3.5×104 and C=6.2), and the power input P to the discharge bulb 120 is 7 W at minimum and 22 W at maximum.

Abstract: A bulb type electrodeless discharge lamp, comprising a recessed part (102), wherein the maximum diameter of a light emitting tube (101) is 60 to 90 mm and the tube wall load of the light emitting tube (101) is 0.07 to 0.11 W/cm2, and a relation between the diameter Dc of the recessed part (102) and an interval ?h between the top of the recessed part (102) and the top part of the light emitting tube (101) meets the requirement of ?h?1.15×Dc+1.25 [mm].

Abstract: An electrodeless discharge lamp operating device including a light-transmitting discharge bulb 120, an induction coil including a core 103 and a coil 104, and a ballast circuit 140 for supplying a high-frequency power to the induction coil. The operating frequency of the ballast circuit 140 is in the range of 80 kHz to 500 kHz, and where the operating frequency of the ballast circuit 140 is f (kHz) and the power input to the discharge bulb 120 is P (W), the rare gas pressure p (Pa) in the discharge bulb 120 satisfies the relationship of the following expression: p ? A P - B f 2 - C [ Expression ? ? ? 1 ] (where A, B and C are constants having the following values: A=4.0×104, B=3.5×104 and C=6.2), and the power input P to the discharge bulb 120 is 7 W at minimum and 22 W at maximum.

Abstract: When forming an optical thin film on a surface of a bulb of a light source such as an electric lamp or a discharge lamp, a thin film whose interface/surface is less rough is formed on a base having a spheroid shape. When forming a thin film on a base 2 with a spheroid shape, which is disposed in a vacuum chamber 4 of a film-forming device and spun on its rotation axis, an interface or a surface of the thin film is made less rough and the thickness distribution of the thin film is made smaller by setting a sputtering gas pressure to be in a range from 0.04 Pa to 5.

Abstract: An electrodeless fluorescent lamp according to the present invention includes: a luminous bulb in which mercury in a liquid state is enclosed as a light emitting substance and which includes a cavity portion; an induction coil which is inserted into the cavity portion and generates an electromagnetic field for generating electric discharge in the luminous bulb; a ballast circuit electrically connected to the induction coil; and a luminophor layer which is provided on the inner surface of the luminous bulb and converts light radiated from the mercury to visible light. In the electrodeless fluorescent lamp, a manganese-activated deep red luminescent substance (3.5MgO·0.5 MgF2.GeO2:Mn4+) is contained only in part of the luminophor layer provided on a surface of the cavity portion facing the inner surface of the luminous bulb.

Abstract: The present invention provides a method for forming thin films, wherein thin films with a uniform thickness can be formed on substrates as objects such as spheroids, even when the films are formed by conventional film-formation methods using an incident particle beam coming from a specific direction (e.g., evaporation and sputtering). In the method, thin films are formed on substrates such as spheroids with an incident particle beam coming from a particle source located in a specific direction by performing a spin motion together with a swing motion. The spin motion is a rotation of the substrate at a constant angular velocity about the spheroidal axis. The swing motion is a rotational oscillation of the same substrate for rotationally oscillating the axis at a constant cycle in one surface, where the center of the rotational oscillation is in the vicinity of the midpoint between two focal points on the axis of the spheroid.

Abstract: The present invention provides a method for forming thin films, wherein thin films with a uniform thickness can be formed on substrates as objects such as spheroids, even when the films are formed by conventional film-formation methods using an incident particle beam coming from a specific direction (e.g., evaporation and sputtering). In the method, thin films are formed on substrates such as spheroids with an incident particle beam coming from a particle source located in a specific direction by performing a spin motion together with a swing motion. The spin motion is a rotation of the substrate at a constant angular velocity about the spheroidal axis. The swing motion is a rotational oscillation of the same substrate for rotationally oscillating the axis at a constant cycle in one surface, where the center of the rotational oscillation is in the vicinity of the midpoint between two focal points on the axis of the spheroid.

Abstract: When forming an optical thin film on a surface of a bulb of a light source such as an electric lamp or a discharge lamp, a thin film whose interface/surface is less rough is formed on a base having a spheroid shape. When forming a thin film on a base 2 with a spheroid shape, which is disposed in a vacuum chamber 4 of a film-forming device and spun on its rotation axis, an interface or a surface of the thin film is made less rough and the thickness distribution of the thin film is made smaller by setting a sputtering gas pressure to be in a range from 0.04 Pa to 5.

Abstract: The present invention provides a method for forming thin films, wherein thin films with a uniform thickness can be formed on substrates as objects such as spheroids, even when the films are formed by conventional film-formation methods using an incident particle beam coming from a specific direction (e.g., evaporation and sputtering). In the method, thin films are formed on substrates such as spheroids with an incident particle beam coming from a particle source located in a specific direction by performing a spin motion together with a swing motion. The spin motion is a rotation of the substrate at a constant angular velocity about the spheroidal axis. The swing motion is a rotational oscillation of the same substrate for rotationally oscillating the axis at a constant cycle in one surface, where the center of the rotational oscillation is in the vicinity of the midpoint between two focal points on the axis of the spheroid.

Abstract: The present invention provides a method for forming thin films, wherein thin films with a uniform thickness can be formed on substrates as objects such as spheroids, even when the films are formed by conventional film-formation methods using an incident particle beam coming from a specific direction (e.g., evaporation and sputtering). In the method, thin films are formed on substrates such as spheroids with an incident particle beam coming from a particle source located in a specific direction by performing a spin motion together with a swing motion. The spin motion is a rotation of the substrate at a constant angular velocity about the spheroidal axis. The swing motion is a rotational oscillation of the same substrate for rotationally oscillating the axis at a constant cycle in one surface, where the center of the rotational oscillation is in the vicinity of the midpoint between two focal points on the axis of the spheroid.

Abstract: The present invention provides a method for forming thin films, wherein thin films with a uniform thickness can be formed on substrates as objects such as spheroids, even when the films are formed by conventional film-formation methods using an incident particle beam coming from a specific direction (e.g., evaporation and sputtering). In the method, thin films are formed on substrates such as spheroids with an incident particle beam coming from a particle source located in a specific direction by performing a spin motion together with a swing motion. The spin motion is a rotation of the substrate at a constant angular velocity about the spheroidal axis. The swing motion is a rotational oscillation of the same substrate for rotationally oscillating the axis at a constant cycle in one surface, where the center of the rotational oscillation is in the vicinity of the midpoint between two focal points on the axis of the spheroid.

Abstract: A soft-magnetic multilayer thin film produced by electroplating, wherein an anode-dissolution process is effected by intermittently applying a reverse d.c. bias current with respect to the plating-forward current. Involving the anode-dissolution process allows the formation of a re-dissolution effect layer differing in crystal structure from the plated film layer. A soft-magnetic multilayer thin film characterized by having a multilayer film structure which comprises a plated layer and a re-dissolution effect layer laminated to each other and which the plated layer is at least magnetically isolated. Further, a method of manufacturing a soft-magnetic multilayer thin film having a multilayer film structure magnetically isolated only through plating, which is offered by introducing the anode-dissolution process.

Abstract: A soft-magnetic multilayer thin film produced by electroplating, wherein an anode-dissolution process is effected by intermittently applying a reverse d.c. bias current with respect to the plating-forward current. Involving the anode-dissolution process allows the formation of a re-dissolution effect layer differing in crystal structure from the plated film layer. A soft-magnetic multilayer thin film characterized by having a multilayer film structure which comprises a plated layer and a re-dissolution effect layer laminated to each other and which the plated layer is at least magnetically isolated. Further, a method of manufacturing a soft-magnetic multilayer thin film having a multilayer film structure magnetically isolated only through plating, which is offered by introducing the anode-dissolution process.

Abstract: A magnetic thin film head having a laminated structure includes a non-magnetic substrate, a lower magnetic layer deposited on the non-magnetic substrate, a magnetic gap layer overlying the lower magnetic layer, at least two insulating layers overlying the magnetic gap layer, at least one electrically conductive layer interposed between the insulating layers, and an upper magnetic layer overlying the insulating layers. A magnetic core of the magnetic thin film head is made up of the upper and lower magnetic layers, at least one of which includes a plurality of magnetically soft layers plated with a metal alloy and a plurality of modified layers each interposed between two adjoining magnetically soft layers. The modified layers function to magnetostatically separate the magnetically soft layers. Each of the modified layers is made by introducing, during electroplating, an anodic dissolution process wherein a surface to be plated is temporarily used as an anode.

Abstract: A soft magnetic multilayer film is manufactured by an electroplating process using an electrolyte containing metal ions. The soft magnetic multilayer film includes soft magnetic layers composed of elements, and deteriorated-soft magnetic layers composed of the same elements and alternating with the soft magnetic layers. The soft magnetic layers are preferably different in composition from the deteriorated-soft magnetic layers. In addition, it is preferable that the metal ions contained in the electrolyte include at least two of Ni ion, Co ion, and Fe ion.

Abstract: A method of producing a thin film magnetic head in which at least one of two, lower and upper, magnetic layers is formed of a soft magnetic amorphous alloy thin film of a given pattern shape, includes the steps of preparing a soft magnetic thin film to communicate directly or magnetically with the soft magnetic amorphous alloy thin film so that an external magnetic field can effectively be applied, during in-field heat treatment, to the soft magnetic amorphous alloy thin film of the head core assembly from a direction at a right angle to the direction of a head core magnetic path, inducing uniaxial magnetic anisotropy in the soft magnetic amorphous alloy thin film through heat treatment in the external magnetic field, and removing the soft magnetic thin film for application of the external magnetic field during the in-field heat treatment.

Abstract: Disclosed is a soft-magnetic film having high saturation magnetic-flux density. The soft-magnetic film is made of an alloy containing as its main components Fe, Co and Ni in the proportion: 20%<Fe<75%, 5%<Co<45% and 20%<Ni<70% (at %) and has a structure in which (110) or (111) planes of a face-centered cubic-lattice structure are given to its thin-film surface, as a preferred crystallographic orientation. The thin-film alloy may contain less than 5% of Cr, Ti, Zr, Hf or the like. The thin film of this alloy is formed by evaporation, electroplating or the like.

Abstract: A ternary FeCoNi alloy film exhibiting a high magnetic flux density is produced by performing electrodeposition at a cathodic electrode using an electrolytic bath for electrodeposition fed with Fe, Co and Ni ions from sulfates, hydrochlorides or mixtures thereof containing respective divalent ions of Fe, Co and Ni, said bath containing a composition having ratios of divalent ion concentrations in the bath in the ranges:0.05.ltoreq.[Co.sup.2+ ]/[Ni.sup.2+ ].ltoreq.0.6 and0.05.ltoreq.[Fe.sup.2+ ]/[Ni.sup.2+ ].ltoreq.2.0,at an electrodepositing current density J in the range:1<J<60 [mA/cm.sup.2 ].

Abstract: A method of manufacturing a high magnetic flux density quaternary alloy electrodeposited thin film, comprising the steps of: forming an FeCoNiCr or an FeCoNiCu quaternary alloy thin film on a cathode by using an electrodepositing electrolyte bath to which four types of ions of Fe, Co, Ni and Cr or Cu have been supplied through sulfate and/or hydrochloride, each of which contains bivalent or tervalent Fe, Co, Ni, Cr and Cu ions, by using a bath having on the basis of the density of [Ni.sup.2+ ] ion such compositions as 0.02<[Co.sup.2+ ]/[Ni.sup.2+ ]<0.9, 0.095<[Fe.sup.2+ ]/[Ni.sup.2+ ]<0.4 and 0.075<[Cr.sup.3+ ]/[Ni.sup.2+ ]<0.4, or 0.001<[Cu.sup.2+ ]/[Ni.sup.2+ ]<0.03; and arranging electrodeposition current density J to be in a range of J<60 (mA/cm.sup.2) at the cathode.