Abstract: An ion implanter includes an implantation processing chamber in which an implantation process of irradiating a wafer with an ion beam is performed, a first Faraday cup disposed inside the implantation processing chamber to measure a beam current of the ion beam during a preparation process performed before the implantation process, a second Faraday cup disposed inside the implantation processing chamber to measure a beam current of the ion beam during a calibration process for calibrating a beam current measurement value of the first Faraday cup, and a blockade member for blocking the ion beam directed toward the second Faraday cup, the blockade member being configured so that the ion beam is not incident into the second Faraday cup during the implantation process and the preparation process, and the ion beam is incident into the second Faraday cup during the calibration process.

Abstract: An ion implanter includes an implantation processing chamber in which an implantation process of irradiating a wafer with an ion beam is performed, a first Faraday cup disposed inside the implantation processing chamber to measure a beam current of the ion beam during a preparation process performed before the implantation process, a second Faraday cup disposed inside the implantation processing chamber to measure a beam current of the ion beam during a calibration process for calibrating a beam current measurement value of the first Faraday cup, and a blockade member for blocking the ion beam directed toward the second Faraday cup, the blockade member being configured so that the ion beam is not incident into the second Faraday cup during the implantation process and the preparation process, and the ion beam is incident into the second Faraday cup during the calibration process.

Abstract: An ion implanter includes a plasma shower device configured to supply electrons to an ion beam with which a wafer is irradiated. The plasma shower device includes a plasma generating chamber provided with an extraction opening, a first electrode which is provided with an opening communicating with the extraction opening and to which a first voltage is applied with respect to an electric potential of the plasma generating chamber, a second electrode which is disposed at a position facing the first electrode such that the ion beam is interposed between the first and second electrodes and to which a second voltage is applied with respect to the electric potential of the plasma generating chamber, and a controller configured to independently control the first voltage and the second voltage to switch operation modes of the plasma shower device.

Abstract: An ion implanter includes a plasma shower device configured to supply electrons to an ion beam with which a wafer is irradiated. The plasma shower device includes a plasma generating chamber provided with an extraction opening, a first electrode which is provided with an opening communicating with the extraction opening and to which a first voltage is applied with respect to an electric potential of the plasma generating chamber, a second electrode which is disposed at a position facing the first electrode such that the ion beam is interposed between the first and second electrodes and to which a second voltage is applied with respect to the electric potential of the plasma generating chamber, and a controller configured to independently control the first voltage and the second voltage to switch operation modes of the plasma shower device.

Abstract: An energy analysis slit of an ion implanter is configured to enable switching between a standard slit opening used for implantation processing performed under a predetermined implantation condition and a high-precision slit opening having higher energy precision than the standard slit opening and used to tune an acceleration parameter for a radio frequency linear accelerator. The acceleration parameter is determined for the predetermined implantation condition so that at least a part of ions supplied to the radio frequency linear accelerator is accelerated to have target energy, and so that the beam current amount measured by a beam measurement unit is equivalent to a target beam current amount.

Abstract: A high-energy ion implanter includes: a beam generation unit that includes an ion source and a mass analyzer; a high-energy multi-stage linear acceleration unit that accelerates an ion beam so as to generate a high-energy ion beam; a high-energy beam deflection unit that changes the direction of the high-energy ion beam toward the wafer; and a beam transportation unit that transports the deflected high-energy ion beam to the wafer. The deflection unit is configured by a plurality of deflection electromagnets, and at least a horizontal focusing element is inserted between the plurality of deflection electromagnets.

Abstract: An energy analysis slit of an ion implanter is configured to enable switching between a standard slit opening used for implantation processing performed under a predetermined implantation condition and a high-precision slit opening having higher energy precision than the standard slit opening and used to tune an acceleration parameter for a radio frequency linear accelerator. The acceleration parameter is determined for the predetermined implantation condition so that at least a part of ions supplied to the radio frequency linear accelerator is accelerated to have target energy, and so that the beam current amount measured by a beam measurement unit is equivalent to a target beam current amount.

Abstract: A high-frequency acceleration type ion acceleration and transportation apparatus is a beamline after an ion beam is accelerated by a high-frequency acceleration system having an energy spread with respect to set beam energy and includes an energy analysis deflection electromagnet and a horizontal beam focusing element. In the ion acceleration and transportation apparatus, a double slit that is configured by an energy spread confining slit and an energy analysis slit is additionally disposed at a position at which energy dispersion and a beam size are to be appropriate. The position is determined based on a condition of the energy analysis deflection electromagnet and the horizontal beam focusing element, and the double slit performs energy separation and energy definition and decreases the energy spread of the ion beam by performing adjustment for a smaller energy spread while suppressing a decrease in the amount of a beam current.

Abstract: A high-frequency acceleration type ion acceleration and transportation apparatus is a beamline after an ion beam is accelerated by a high-frequency acceleration system having an energy spread with respect to set beam energy and includes an energy analysis deflection electromagnet and a horizontal beam focusing element. In the ion acceleration and transportation apparatus, a double slit that is configured by an energy spread confining slit and an energy analysis slit is additionally disposed at a position at which energy dispersion and a beam size are to be appropriate. The position is determined based on a condition of the energy analysis deflection electromagnet and the horizontal beam focusing element, and the double slit performs energy separation and energy definition and decreases the energy spread of the ion beam by performing adjustment for a smaller energy spread while suppressing a decrease in the amount of a beam current.

Abstract: A high-energy ion implanter includes: a beam generation unit that includes an ion source and a mass analyzer; a high-energy multi-stage linear acceleration unit that accelerates an ion beam so as to generate a high-energy ion beam; a high-energy beam deflection unit that changes the direction of the high-energy ion beam toward the wafer; and a beam transportation unit that transports the deflected high-energy ion beam to the wafer. The deflection unit is configured by a plurality of deflection electromagnets, and at least a horizontal focusing element is inserted between the plurality of deflection electromagnets.

Abstract: In terminals (10, 20) to be connected by inserting a tab (11) of one terminal (10) into a tubular portion (21) of the other terminal (20), a resiliently deformable resilient contact piece (23) is provided in the tubular portion (21) and includes a contact portion (24) to be brought into contact with the tab (11) inserted into the tubular portion (21), and a groove (13) is formed in a part of the contact portion (24) to be brought into sliding contact with the tab (11) or in a part of the tab (11) to come into sliding contact with the contact portion (24), both lateral edges (13S) of the groove (13) extending in oblique directions with respect to an inserting direction of the tab (11).

Abstract: In terminals (10, 20) to be connected by inserting a tab (11) of one terminal (10) into a tubular portion (21) of the other terminal (20), a resiliently deformable resilient contact piece (23) is provided in the tubular portion (21) and includes a contact portion (24) to be brought into contact with the tab (11) inserted into the tubular portion (21), and a groove (13) is formed in a part of the contact portion (24) to be brought into sliding contact with the tab (11) or in a part of the tab (11) to come into sliding contact with the contact portion (24), both lateral edges (13S) of the groove (13) extending in oblique directions with respect to an inserting direction of the tab (11).

Abstract: A load balance is adjusted to be appropriate even if shared loads of lifting jacks are fluctuated from an initial setting state caused by cumulative errors of suspending rods. It is a load balance adjusting method of the lifting jack when a lifting module is jacked up by the plural lifting jacks via the suspending rods. The shared loads of the lifting jacks jacking up the respective suspending rods coupled to the lifting module are detected. A height of the lifting jack is adjusted when a fluctuation relative to a setting shared load stored in advance exceeds a prescribed range, to thereby adjust to be the setting shared load.

Abstract: A receiver includes a light-receiving portion which receives an infrared remote control signal from a transmitter, an A/D converter which converts a signal received by the light-receiving portion into a digital signal at a frequency much higher than a carrier wave, and a digital filter having the band-pass function of a pass band containing the carrier band of the infrared remote control signal for the digital signal output from the A/D converter. The digital filter reduces the influence of variations in argon spectrum intensity over time.

Abstract: When a discharge lamp is preheated, impedance of a filament electrode of the discharge lamp is computed. In accordance with the computed impedance, preheating and lighting of the discharge lamp are controlled.

Abstract: Chained terminals have a carrier (1) with opposite first and second side edges and terminal fittings (2) coupled to the first side edge of the carrier (1). The carrier (1) is formed with feed holes (6, 7) in correspondence with the respective terminal fittings (2). A widened portion (8) is provided along the first side edge of the carrier (1) and the feed holes (6, 7) are deviated towards the second side edge along the width direction. Thus, strength can be increased by as much as the carrier (1) is widened, and production efficiency can be increased by increasing a conveying speed.

Abstract: A fastening nut includes an operation member, a female threaded member, and a control device. The operation member is operable by an operator to rotate in a fastening direction and a loosening direction. The control device is coupled between the operation member and the female threaded member and includes a plurality of movable members, such as nut segments and wedge members, and a plurality of control members, such as rollers and balls. The movable members are arranged in a circumferential direction about the nut axis. Each movable member is movable between a first position and a second position. The first positions enables fastening of the female threaded member onto the male threaded member. The second position enables loosening of the female threaded member. The control members either prevent or allow the movement of each movable member from a first position to a second position.

Abstract: A resonance load circuit is supplied with the high-frequency voltage from the inverter circuit, and includes an inductor, a capacitor and a discharge lamp. The resonance load circuit is so that a declination with respect to the lighting frequency fs is set to a range from ?20° to 40° in impedance when the discharge lamp is operating at rating. The CPU continuously generates a pulse voltage for driving on and off the switch elements at a cycle shorter than a lighting cycle of the discharge lamp based on program data and data stored in a memory, and makes pulse-width modulation with respect to an on-state width of the pulse voltage in accordance with a waveform change of a sinusoidal voltage corresponding to the lighting cycle, and further, supplies an approximately sinusoidal current to the discharge lamp using a high-frequency output from the inverter circuit.

Abstract: A load balance is adjusted to be appropriate even if shared loads of lifting jacks are fluctuated from an initial setting state caused by cumulative errors of suspending rods. It is a load balance adjusting method of the lifting jack when a lifting module is jacked up by the plural lifting jacks via the suspending rods. The shared loads of the lifting jacks jacking up the respective suspending rods coupled to the lifting module are detected. A height of the lifting jack is adjusted when a fluctuation relative to a setting shared load stored in advance exceeds a prescribed range, to thereby adjust to be the setting shared load.

Abstract: Chained terminals have a carrier (1) with opposite first and second side edges and terminal fittings (2) coupled to the first side edge of the carrier (1). The carrier (1) is formed with feed holes (6, 7) in correspondence with the respective terminal fittings (2). A widened portion (8) is provided along the first side edge of the carrier (1) and the feed holes (6, 7) are deviated towards the second side edge along the width direction. Thus, strength can be increased by as much as the carrier (1) is widened, and production efficiency can be increased by increasing a conveying speed.