Patents by Inventor Yuuki Aburakawa
Yuuki Aburakawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11676767Abstract: Disclosed herein a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer disposed between the lower electrode layer and the upper electrode layer. The dielectric layer has a through hole. An inner wall surface of the through hole has a first tapered surface and a second tapered surface surrounded by the first tapered surface. The first and second tapered surfaces are not covered with the upper electrode layer and have respective first and second taper angles with respect to a surface of the lower electrode layer. The second taper angle is smaller than the first taper angle.Type: GrantFiled: February 2, 2021Date of Patent: June 13, 2023Assignee: TDK CORPORATIONInventors: Yuuki Aburakawa, Tatsuo Namikawa, Akiyasu Iioka, Hitoshi Saita, Kazuhiro Yoshikawa
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Patent number: 11430611Abstract: Disclosed herein a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer disposed between the lower electrode layer and the upper electrode layer. The dielectric layer has a through hole. The upper electrode layer has a connection part connected to the lower electrode layer through the through hole and an electrode part insulated from the connection part by a slit. A surface of the lower electrode layer that contacts the connection part through the through hole includes an annular area positioned along an inner wall surface of the through hole and a center area surrounded by the annular area. The annular area is lower in surface roughness than the center area.Type: GrantFiled: February 2, 2021Date of Patent: August 30, 2022Assignee: TDK CORPORATIONInventors: Yuuki Aburakawa, Tatsuo Namikawa, Akiyasu Iioka, Atsuo Matsutani, Hitoshi Saita, Kazuhiro Yoshikawa
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Thin film capacitor, manufacturing method therefor, and substrate with built-in electronic component
Patent number: 11398354Abstract: A thin film capacitor is provided with a lower electrode made of a metal foil containing many metal grains, a dielectric thin film formed on an upper surface of the lower electrode, and an upper electrode formed on an upper surface of the dielectric thin film. A lower surface of the lower electrode is an etched surface from which cross sections of the metal grains appear. The height difference between the cross sections of adjacent metal grains in the etched surface is 1 ?m or more and 8 ?m or less.Type: GrantFiled: October 21, 2019Date of Patent: July 26, 2022Assignee: TDK CORPORATIONInventors: Yuuki Aburakawa, Tatsuo Namikawa, Suguru Andoh, Hitoshi Saita -
Patent number: 11240908Abstract: Disclosed herein is a thin film capacitor that includes a capacitive insulating film, a first metal film formed on one surface of the capacitive insulating film, and a second metal film formed on other surface of the capacitive insulating film and made of a metal material different from that of the first metal film. The thin film capacitor has an opening penetrating the capacitive insulating film, first metal film, and second metal film. The second metal film is thicker than the first metal film. A first size of a part of the opening that penetrates the first metal film is larger than a second size of a part of the opening that penetrates the second metal film.Type: GrantFiled: October 28, 2019Date of Patent: February 1, 2022Assignee: TDK CORPORATIONInventors: Kazuhiro Yoshikawa, Yuuki Aburakawa, Tatsuo Namikawa, Kenichi Yoshida, Hitoshi Saita
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Publication number: 20210272757Abstract: Disclosed herein a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer disposed between the lower electrode layer and the upper electrode layer. The dielectric layer has a through hole. An inner wall surface of the through hole has a first tapered surface and a second tapered surface surrounded by the first tapered surface. The first and second tapered surfaces are not covered with the upper electrode layer and have respective first and second taper angles with respect to a surface of the lower electrode layer. The second taper angle is smaller than the first taper angle.Type: ApplicationFiled: February 2, 2021Publication date: September 2, 2021Applicant: TDK CORPORATIONInventors: Yuuki ABURAKAWA, Tatsuo NAMIKAWA, Akiyasu IIOKA, Hitoshi SAITA, Kazuhiro YOSHIKAWA
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Publication number: 20210265116Abstract: Disclosed herein a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer disposed between the lower electrode layer and the upper electrode layer. The dielectric layer has a through hole. The upper electrode layer has a connection part connected to the lower electrode layer through the through hole and an electrode part insulated from the connection part by a slit. A surface of the lower electrode layer that contacts the connection part through the through hole includes an annular area positioned along an inner wall surface of the through hole and a center area surrounded by the annular area. The annular area is lower in surface roughness than the center area.Type: ApplicationFiled: February 2, 2021Publication date: August 26, 2021Applicant: TDK CORPORATIONInventors: Yuuki ABURAKAWA, Tatsuo Namikawa, Akiyasu Iioka, Atsuo Matsutani, Hitoshi Saita, Kazuhiro Yoshikawa
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Patent number: 10699844Abstract: Disclosed herein is a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer positioned between the lower electrode layer and the upper electrode layer. The upper electrode layer has a first capacitive electrode part opposed to the lower electrode layer through the dielectric layer without being connected to the lower electrode layer and a fiducial mark part penetrating the dielectric layer to be connected to the lower electrode layer.Type: GrantFiled: January 6, 2020Date of Patent: June 30, 2020Assignee: TDK CORPORATIONInventors: Hitoshi Saita, Kazuhiro Yoshikawa, Yuuki Aburakawa, Tatsuo Namikawa, Akiyasu Iioka, Kenichi Yoshida
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Publication number: 20200137883Abstract: Disclosed herein is a thin film capacitor that includes a capacitive insulating film, a first metal film formed on one surface of the capacitive insulating film, and a second metal film formed on other surface of the capacitive insulating film and made of a metal material different from that of the first metal film. The thin film capacitor has an opening penetrating the capacitive insulating film, first metal film, and second metal film. The second metal film is thicker than the first metal film. A first size of a part of the opening that penetrates the first metal film is larger than a second size of a part of the opening that penetrates the second metal film.Type: ApplicationFiled: October 28, 2019Publication date: April 30, 2020Inventors: Kazuhiro YOSHIKAWA, Yuuki ABURAKAWA, Tatsuo NAMIKAWA, Kenichi YOSHIDA, Hitoshi SAITA
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THIN FILM CAPACITOR, MANUFACTURING METHOD THEREFOR, AND SUBSTRATE WITH BUILT-IN ELECTRONIC COMPONENT
Publication number: 20200135406Abstract: A thin film capacitor is provided with a lower electrode made of a metal foil containing many metal grains, a dielectric thin film formed on an upper surface of the lower electrode, and an upper electrode formed on an upper surface of the dielectric thin film. A lower surface of the lower electrode is an etched surface from which cross sections of the metal grains appear. The height difference between the cross sections of adjacent metal grains in the etched surface is 1 ?m or more and 8 ?m or less.Type: ApplicationFiled: October 21, 2019Publication date: April 30, 2020Applicant: TDK CORPORATIONInventors: Yuuki ABURAKAWA, Tatsuo NAMIKAWA, Suguru ANDOH, Hitoshi SAITA -
Patent number: 10062507Abstract: An electronic device sheet, comprising a pair of electrodes, a dielectric layer provided between the pair of electrodes, and one or more insulation patch members provided on one of principal surfaces of the dielectric layer, wherein the insulation patch member includes a boundary line having an undulating shape.Type: GrantFiled: October 21, 2016Date of Patent: August 28, 2018Assignee: TDK CORPORATIONInventors: Junji Aotani, Shigeaki Tanaka, Katsuyuki Kurachi, Tatsuo Namikawa, Yuuki Aburakawa
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Patent number: 9831039Abstract: A thin film capacitor comprises: a laminated body that has a base electrode, a dielectric layer and an upper electrode layer; a protective layer covering the base electrode, the dielectric layer and the upper electrode layer, and includes a first through-hole that reaches the base electrode, and a second through-hole that reaches the upper electrode layer; a first extraction electrode in the first through-hole and electrically connected with the base electrode; a second extraction electrode in the second through-hole and electrically connected with the upper electrode layer; a first terminal electrode on the protective layer, and connected with the base electrode through the first extraction electrode; and a second terminal electrode on the protective layer, and connected with the upper electrode layer through the second extraction electrode. Young's modulus of the protective layer is equal to or higher than 0.1 GPa and equal to or lower than 2.0 GPa.Type: GrantFiled: November 30, 2015Date of Patent: November 28, 2017Assignee: TDK CORPORATIONInventors: Tatsuo Namikawa, Junji Aotani, Katsuyuki Kurachi, Yuuki Aburakawa, Shigeaki Tanaka
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Patent number: 9818539Abstract: A thin film capacitor includes a lower electrode layer, an upper electrode layer, and a dielectric substance layer provided between the lower electrode layer and the upper electrode layer. A dielectric patch member formed of a dielectric material is formed on a surface of the dielectric substance layer on an upper electrode layer side, a cross-sectional structure of the dielectric patch member has a taper angle of 1 to 25 degrees in a cross section perpendicular to the dielectric substance layer, the taper angle being an angle formed by (1) a tangential line tangent to an end portion of the dielectric patch member at a position that is 50% of a maximum height of the dielectric patch member and (2) a line being an interface between the dielectric substance layer and the upper electrode layer, and an area of the dielectric patch member is 100 to 900000 ?m2.Type: GrantFiled: October 13, 2015Date of Patent: November 14, 2017Assignee: TDK CORPORATIONInventors: Junji Aotani, Shigeaki Tanaka, Katsuyuki Kurachi, Tatsuo Namikawa, Yuuki Aburakawa
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Patent number: 9773614Abstract: A thin film capacitor includes a pair of electrode layers, a dielectric layer existing between the pair of electrode layers, and a ceramic layer disposed on a surface opposite to the dielectric layer of at least one of the electrode layers.Type: GrantFiled: July 20, 2015Date of Patent: September 26, 2017Assignee: TDK CORPORATIONInventors: Katsuyuki Kurachi, Tatsuo Namikawa, Junji Aotani, Yuuki Aburakawa, Shigeaki Tanaka
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Publication number: 20170117096Abstract: An electronic device sheet, comprising a pair of electrodes, a dielectric layer provided between the pair of electrodes, and one or more insulation patch members provided on one of principal surfaces of the dielectric layer, wherein the insulation patch member includes a boundary line having an undulating shape.Type: ApplicationFiled: October 21, 2016Publication date: April 27, 2017Applicant: TDK CORPORATIONInventors: Junji AOTANI, Shigeaki TANAKA, Katsuyuki KURACHI, Tatsuo NAMIKAWA, Yuuki ABURAKAWA
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Patent number: 9620291Abstract: A thin film capacitor including a lower electrode layer, a dielectric layer provided on the lower electrode layer, and an upper electrode layer formed on the dielectric layer, wherein the dielectric layer includes a recessed portion in a portion on the upper face thereof, a cross-sectional structure perpendicular to the dielectric layer of the recessed portion has a cross-sectional taper angle of 1 degree or more and 25 degrees or less, and the distance between the bottom portion center and an outermost portion of the recessed portion is 20 times or more and 150 times or less a thickness of the dielectric layer.Type: GrantFiled: July 14, 2015Date of Patent: April 11, 2017Assignee: TDK CORPORATIONInventors: Junji Aotani, Shigeaki Tanaka, Katsuyuki Kurachi, Tatsuo Namikawa, Yuuki Aburakawa
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Publication number: 20160163463Abstract: A thin film capacitor comprises: a laminated body that has a base electrode, a dielectric layer and an upper electrode layer; a protective layer covering the base electrode, the dielectric layer and the upper electrode layer, and includes a first through-hole that reaches the base electrode, and a second through-hole that reaches the upper electrode layer; a first extraction electrode in the first through-hole and electrically connected with the base electrode; a second extraction electrode in the second through-hole and electrically connected with the upper electrode layer; a first terminal electrode on the protective layer, and connected with the base electrode through the first extraction electrode; and a second terminal electrode on the protective layer, and connected with the upper electrode layer through the second extraction electrode. Young's modulus of the protective layer is equal to or higher than 0.1 GPa and equal to or lower than 2.0 GPa.Type: ApplicationFiled: November 30, 2015Publication date: June 9, 2016Applicant: TDK CORPORATIONInventors: Tatsuo NAMIKAWA, Junji AOTANI, Katsuyuki KURACHI, Yuuki ABURAKAWA, Shigeaki TANAKA
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Publication number: 20160111211Abstract: A thin film capacitor comprising a lower electrode layer, an upper electrode layer, and a dielectric substance layer provided between the lower electrode layer and the upper electrode layer, wherein a dielectric patch member formed of a dielectric material is formed on a surface of the dielectric substance layer on an upper electrode layer side, a cross-sectional structure of the dielectric patch member has a taper angle of 1 to 25 degrees in a cross section perpendicular to the dielectric substance layer, the taper angle being an angle formed by (1) a tangential line tangent to an end portion of the dielectric patch member at a position that is 50% of a maximum height of the dielectric patch member and (2) a line being an interface between the dielectric substance layer and the upper electrode layer, and an area of the dielectric patch member is 100 to 900000 ?m2.Type: ApplicationFiled: October 13, 2015Publication date: April 21, 2016Inventors: Junji AOTANI, Shigeaki TANAKA, Katsuyuki KURACHI, Tatsuo NAMIKAWA, Yuuki ABURAKAWA
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Publication number: 20160027579Abstract: A thin film capacitor includes a pair of electrode layers, a dielectric layer existing between the pair of electrode layers, and a ceramic layer disposed on a surface opposite to the dielectric layer of at least one of the electrode layers.Type: ApplicationFiled: July 20, 2015Publication date: January 28, 2016Inventors: Katsuyuki KURACHI, Tatsuo NAMIKAWA, Junji AOTANI, Yuuki ABURAKAWA, Shigeaki TANAKA
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Publication number: 20160020030Abstract: A thin film capacitor including a lower electrode layer, a dielectric layer provided on the lower electrode layer, and an upper electrode layer formed on the dielectric layer, wherein the dielectric layer includes a recessed portion in a portion on the upper face thereof, a cross-sectional structure perpendicular to the dielectric layer of the recessed portion has a cross-sectional taper angle of 1 degree or more and 25 degrees or less, and the distance between the bottom portion center and an outermost portion of the recessed portion is 20 times or more and 150 times or less a thickness of the dielectric layer.Type: ApplicationFiled: July 14, 2015Publication date: January 21, 2016Inventors: Junji AOTANI, Shigeaki TANAKA, Katsuyuki KURACHI, Tatsuo NAMIKAWA, Yuuki ABURAKAWA
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Patent number: 8980116Abstract: A sintered ferrite magnet having a ferrite phase with a hexagonal structure as the main phase, wherein the composition of the metal elements composing the main phase is represented by the following general formula (1): RxCamA1?x?m(Fe12?yMy)z: ??(1), x, m, y and z in formula (1) satisfying all of the conditions represented by the following formulas (2)-(6): 0.2?x?0.5: ??(2) 0.13?m?0.41: ??(3) 0.7x?m?0.15: ??(4) 0.18?yz?0.31: ??(5) 9.6?12z?11.8: ??(6), and wherein the density of the sintered ferrite magnet is at least 5.05 g/cm3, and the crystal grains of the sintered ferrite magnet satisfy all of the conditions represented by the following formulas (7) and (8), where L ?m is the average for the maximum value and S ?m is the average for the minimum value among the diameters passing through the center of gravity of each grains in the crystal cross-section parallel to the c-axis direction of hexagonal structures. L?0.95: ??(7) 1.8?L/S?2.5: ??(8).Type: GrantFiled: February 27, 2008Date of Patent: March 17, 2015Assignee: TDK CorporationInventors: Shigeki Yanagida, Noboru Ito, Yuuki Aburakawa, Naoki Mori, Yoshihiko Minachi