Abstract: The vibration substrate having a main surface extending parallel to a first direction and a second direction that are orthogonal to each other, and that includes a main body region having a vibrating portion at least in a part thereof and at least one holding region arranged side by side with the main body region along the first direction. The at least one holding region including a holding portion and a beam portion connecting the holding portion and the main body region. The beam portion includes a first arm portion extending from the holding portion along the first direction, a second arm portion extending along the second direction from an end portion of the first arm portion on a side thereof opposite to the holding portion, and a connection portion connecting the second arm portion and the main body region.

Abstract: A quartz crystal resonator unit that includes: a piezoelectric blank; a first excitation electrode on a first principal surface and within at least a part of a vibration portion of the piezoelectric blank; a second excitation electrode on a second principal surface and within at least a part of the vibration portion of the piezoelectric blank; a first extended electrode on the first principal surface and electrically connected to the first excitation electrode; and a second extended electrode on the second principal surface and electrically connected to the second excitation electrode; and an insulation layer including a hollow portion which defines a space with the second excitation electrode. A thickness of the first extended electrode is larger than a thickness of the second extended electrode. An end portion of the first extended electrode extends over the hollow portion in a plan view of the piezoelectric vibrator.

Abstract: A piezoelectric vibration element includes a piezoelectric piece having a main surface; an excitation electrode disposed on the main surface of the piezoelectric piece; and a connection electrode disposed on the main surface of the piezoelectric piece and electrically connected to the excitation electrode, wherein when the main surface of the piezoelectric piece is viewed in a plan, the piezoelectric piece has a through-hole in an area between the excitation electrode and the connection electrode, and wherein an internal wall of the through-hole located closer to the excitation electrode has at least four slopes.

Abstract: The vibration substrate having a main surface extending parallel to a first direction and a second direction that are orthogonal to each other, and that includes a main body region having a vibrating portion at least in a part thereof and at least one holding region arranged side by side with the main body region along the first direction. The at least one holding region including a holding portion and a beam portion connecting the holding portion and the main body region. The beam portion includes a first arm portion extending from the holding portion along the first direction, a second arm portion extending along the second direction from an end portion of the first arm portion on a side thereof opposite to the holding portion, and a connection portion connecting the second arm portion and the main body region.

Abstract: A method for detecting a crystal defect in a silicon single crystal wafer doped with nitrogen, the silicon single crystal wafer whose initial oxygen concentration is 8 ppma (JEIDA) or lower. The method further includes the steps of: making a crystal defect of defect size of 25 nm or smaller apparent and detectable by implanting oxygen into the crystal defect by performing heat treatment on the silicon single crystal wafer in an oxygen atmosphere; and detecting the crystal defect of the silicon single crystal wafer after the heat treatment temperature is set such that, when the ratio between the oxygen solid solubility and the initial oxygen concentration of the silicon single crystal wafer heat treatment is set at ?=the oxygen solid solubility/the initial oxygen concentration, ? falls within a range from 1 to 3.

Abstract: A method of manufacturing an SOI wafer, includes, before forming an oxide film, heat treating a prepared silicon wafer at a temperature ranging from 1100° C. to 1250° C. under an oxidizing atmosphere for 30 minutes to 120 minutes and polishing a surface of the silicon wafer subjected to the heat treatment, which will become a bonding interface. The method can sufficiently dissolve defects in a bond wafer in SOI-wafer manufacture and manufacture an SOI wafer with few faults such as defects. The method also can repeatedly reuse a separated wafer, which is produced as a by-product in the ion implantation separation method, as the bond wafer.

Abstract: The present invention provides a method for manufacturing a silicon single crystal wafer, in which a heat treatment is performed with respect to a silicon single crystal wafer having oxygen concentration of less than 7 ppma and nitrogen concentration of 1×1013 to 1×1014 atoms/cm3, which is obtained from a V-region silicon single crystal ingot grown by the Czochralski method, in a non-nitriding atmosphere at 1150 to 1300° C. for 1 to 120 minutes. As a result, a method for manufacturing a low-cost silicon single crystal wafer which is applicable to an IGBT by using a V-region wafer that is manufactured by the CZ method which can cope with an increase in diameter, by making a bulk have no defects and by providing a radial resistivity distribution, which is substantially equal to that when the neutron irradiation is effected, without performing the neutron irradiation is provided.

Abstract: A method for manufacturing a coating rod, comprising the steps of preparing a rod material, disposing a pair of form rolling dies having a plurality of helical convex threads, so that the closure angle of a main axis of each of the form rolling dies in the horizontal direction of the main axis is substantially 0.25° or larger but not larger than 0.35° with respect to an axial direction of the rod material, and form-rolling the rod material by feeding the rod material along the axial direction thereof and rotating the pair of form rolling dies around the main axes thereof, while clamping the rod material with the pair of form rolling dies.

Abstract: The invention provides a method for manufacturing a bonded substrate by bonding a base substrate to a bond substrate through an insulator film, including: a porous layer forming step of partially forming a porous layer or forming a porous layer whose thickness partially varies on a bonding surface of the base substrate; an insulator film forming step of changing the porous layer into the insulator film, and thereby forming the insulator film whose thickness partially varies on the bonding surface of the base substrate; a bonding step of bonding the base substrate to the bond substrate through the insulator film; and a film thickness reducing step of reducing a film thickness of the bonded bond substrate to form a thin-film layer. As a result, there is provided the method for manufacturing a bonded substrate that enables obtaining an insulator film whose thickness partially varies with use of a simple method.

Abstract: A method for manufacturing a bonded substrate that has an insulator layer in part of the bonded substrate includes: partially forming a porous layer or forming a porous layer whose thickness partially varies on a bonding surface of the base substrate; performing a heat treatment to the base substrate having the porous layer formed thereon to change the porous layer into the insulator layer, and thereby forming the insulator layer whose thickness partially varies on the bonding surface of the base substrate; removing the insulator layer whose thickness varies by an amount corresponding to a thickness of a small-thickness portion by etching; bonding the bonding surface of the base substrate on which an unetched remaining insulator layer is exposed to a bond substrate; and reducing a thickness of the bonded bond substrate and thereby forming a thin film layer.

Abstract: A method for manufacturing a bonded substrate that has an insulator layer in part of the bonded substrate includes: partially forming a porous layer or forming a porous layer whose thickness partially varies on a bonding surface of the base substrate; performing a heat treatment to the base substrate having the porous layer formed thereon to change the porous layer into the insulator layer, and thereby forming the insulator layer whose thickness partially varies on the bonding surface of the base substrate; removing the insulator layer whose thickness varies by an amount corresponding to a thickness of a small-thickness portion by etching; bonding the bonding surface of the base substrate on which an unetched remaining insulator layer is exposed to a bond substrate; and reducing a thickness of the bonded bond substrate and thereby forming a thin film layer.

Abstract: A method for detecting a crystal defect in a silicon single crystal wafer doped with nitrogen, the silicon single crystal wafer whose initial oxygen concentration is 8 ppma (JEIDA) or lower. The method further includes the steps of: making a crystal defect of defect size of 25 nm or smaller apparent and detectable by implanting oxygen into the crystal defect by performing heat treatment on the silicon single crystal wafer in an oxygen atmosphere; and detecting the crystal defect of the silicon single crystal wafer after the heat treatment temperature is set such that, when the ratio between the oxygen solid solubility and the initial oxygen concentration of the silicon single crystal wafer heat treatment is set at ?=the oxygen solid solubility/the initial oxygen concentration, ? falls within a range from 1 to 3.

Abstract: The invention provides a method for manufacturing a bonded substrate by bonding a base substrate to a bond substrate through an insulator film, including: a porous layer forming step of partially forming a porous layer or forming a porous layer whose thickness partially varies on a bonding surface of the base substrate; an insulator film forming step of changing the porous layer into the insulator film, and thereby forming the insulator film whose thickness partially varies on the bonding surface of the base substrate; a bonding step of bonding the base substrate to the bond substrate through the insulator film; and a film thickness reducing step of reducing a film thickness of the bonded bond substrate to form a thin-film layer. As a result, there is provided the method for manufacturing a bonded substrate that enables obtaining an insulator film whose thickness partially varies with use of a simple method.

Abstract: The present invention provides a method for manufacturing a silicon single crystal wafer, in which a heat treatment is performed with respect to a silicon single crystal wafer having oxygen concentration of less than 7 ppma and nitrogen concentration of 1×1013 to 1×1014 atoms/cm3, which is obtained from a V-region silicon single crystal ingot grown by the Czochralski method, in a non-nitriding atmosphere at 1150 to 1300° C. for 1 to 120 minutes. As a result, a method for manufacturing a low-cost silicon single crystal wafer which is applicable to an IGBT by using a V-region wafer that is manufactured by the CZ method which can cope with an increase in diameter, by making a bulk have no defects and by providing a radial resistivity distribution, which is substantially equal to that when the neutron irradiation is effected, without performing the neutron irradiation is provided.

Abstract: A method for manufacturing a coating rod, comprising the steps of preparing a rod material, disposing a pair of form rolling dies having a plurality of helical convex threads, so that the closure angle of a main axis of each of the form rolling dies in the horizontal direction of the main axis is substantially 0.25° or larger but not larger than 0.35° with respect to an axial direction of the rod material, and form-rolling the rod material by feeding the rod material along the axial direction thereof and rotating the pair of form rolling dies around the main axes thereof, while clamping the rod material with the pair of form rolling dies.