Patents by Inventor Yuuki OOTABARA

Yuuki OOTABARA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Negative voltage generation circuit and power conversion device using same
    Patent number: 11394288
    Abstract: A negative voltage generation circuit 200 includes a first DC voltage source 201 having a positive terminal connected to a first node N1 (Vin), a first diode 202 having a cathode connected to a negative terminal of the first DC voltage source 201 and an anode connected to an output terminal of a first negative voltage VC1 (fourth node N4), and a first capacitor 204 having a first terminal connected to an output terminal of the first negative voltage VC1 and a second terminal connected to a second node N2 (Vs_high), so as to supply the first negative voltage VC1 to a first driver 20 that performs switching control of a first NMOSFET 11 (first switch element) connected between the first node N1 (Vin) and the second node N2 (Vs_high).
    Type: Grant
    Filed: December 11, 2018
    Date of Patent: July 19, 2022
    Assignee: Rohm Co., Ltd.
    Inventors: Yusuke Nakakohara, Yuta Okawauchi, Ken Nakahara, Shinichiro Nagai, Yuuki Ootabara
  • NEGATIVE VOLTAGE GENERATION CIRCUIT AND POWER CONVERSION DEVICE USING SAME
    Publication number: 20200350814
    Abstract: A negative voltage generation circuit 200 includes a first DC voltage source 201 having a positive terminal connected to a first node N1 (Vin), a first diode 202 having a cathode connected to a negative terminal of the first DC voltage source 201 and an anode connected to an output terminal of a first negative voltage VC1 (fourth node N4), and a first capacitor 204 having a first terminal connected to an output terminal of the first negative voltage VC1 and a second terminal connected to a second node N2 (Vs_high), so as to supply the first negative voltage VC1 to a first driver 20 that performs switching control of a first NMOSFET 11 (first switch element) connected between the first node N1 (Vin) and the second node N2 (Vs_high).
    Type: Application
    Filed: December 11, 2018
    Publication date: November 5, 2020
    Applicant: ROHM CO., LTD.
    Inventors: Yusuke NAKAKOHARA, Yuta OKAWAUCHI, Ken NAKAHARA, Shinichiro NAGAI, Yuuki OOTABARA